BYV10ED-600P
Ultrafast power diode
24 July 2015
Product data sheet
1. General description
Enhanced ultrafast power diode in a SOT428 (DPAK) plastic package.
2. Features and benefits
•
•
•
•
•
•
High thermal cycling performance
Soft recovery characteristic
Low on-state losses
Surface-mountable package
Low thermal resistance
Enhanced avalanche energy capability
3. Applications
•
•
Dual Mode (DCM and CCM) PFC
Power Factor Correction (PFC) for Interleaved Topology
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
I
FRM
I
FSM
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5 ; T
mb
≤ 118 °C; Square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
-
-
-
-
-
-
20
70
80
A
A
A
Conditions
Min
-
-
Typ
-
-
Max
600
10
Unit
V
A
DP
AK
repetitive peak forward δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 118 °C;
current
Square-wave pulse
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; SIN;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; SIN;
Fig. 4
I
F
= 10 A; T
j
= 25 °C;
Fig. 6
I
F
= 10 A; T
j
= 150 °C;
Fig. 6
Static characteristics
V
F
forward voltage
-
-
1.5
-
2
1.6
V
V
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/µs;
T
j
= 25 °C;
Fig. 7
-
35
50
ns
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NXP Semiconductors
BYV10ED-600P
Ultrafast power diode
Symbol
Parameter
Conditions
I
F
= 10 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C;
Fig. 7
I
F
= 10 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 125 °C;
Fig. 7
Min
-
-
Typ
50
78
Max
-
-
Unit
ns
ns
Avalanche energy
E
AS
non-repetitive
avalanche energy
I
R
= 2.6 A; T
j(init)
= 25 °C; L = 15 mH
-
50
-
mJ
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
n.c.
K
A
K
not connected
cathode
[1]
anode
mounting base; connected to
cathode
2
1
3
Simplified outline
mb
Graphic symbol
K
A
001aaa020
DPAK (SOT428)
[1]
It is not possible to connect to pin 2 of the SOT428 package.
6. Ordering information
Table 3.
Ordering information
Package
Name
BYV10ED-600P
DPAK
Description
plastic single-ended surface-mounted package (DPAK);
3 leads (one lead cropped)
Version
SOT428
Type number
7. Marking
Table 4.
Marking codes
Marking code
BYV10ED-600P
Type number
BYV10ED-600P
BYV10ED-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 July 2015
2 / 11
NXP Semiconductors
BYV10ED-600P
Ultrafast power diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
storage temperature
junction temperature
25
P
tot
(W)
20
0.2
0.1
10
8
0.5
aaa-017654
Conditions
Min
-
-
Max
600
600
600
10
20
70
80
175
175
aaa-017655
Unit
V
V
V
A
A
A
A
°C
°C
DC
δ = 0.5 ; T
mb
≤ 118 °C; Square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 118 °C;
Square-wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; SIN;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; SIN;
Fig. 4
-
-
-
-
-
-40
-
20
P
tot
(W)
16
2.8
12
4.0
2.2
1.9
T
stg
T
j
δ=1
a = 1.57
15
5
4
0
0
5
10
I
F(AV)
(A)
15
0
0
2
4
6
8
10
I
F(AV)
(A)
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 1.241 V; R
s
= 0.034 Ω
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 1.241 V; R
s
= 0.034 Ω
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYV10ED-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 July 2015
3 / 11
NXP Semiconductors
BYV10ED-600P
Ultrafast power diode
16
I
F(AV)
(A)
12
aaa-017656
10
4
I
FSM
(A)
aaa-017657
118 °C
10
3
8
10
2
4
t
t
p
T
j(init)
= 25 °C max
I
F
I
FSM
0
-50
0
50
100
150
200
T
mb
(°C)
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3.
Forward current as a function of mounting base Fig. 4.
temperature; maximum values
Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
BYV10ED-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 July 2015
4 / 11
NXP Semiconductors
BYV10ED-600P
Ultrafast power diode
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
10
Z
th(j-mb)
(K/W)
1
Conditions
With heatsink compound;
Fig. 5
Min
-
Typ
-
Max
3
Unit
K/W
R
th(j-a)
in free air
-
50
-
K/W
aaa-017658
δ = 0.5
10
-1
δ = 0.2
δ = 0.1
δ = 0.05
single pulse
10
-2
10
-6
10
5
10
4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BYV10ED-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 July 2015
5 / 11
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