NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
BYT79 series
SYMBOL
QUICK REFERENCE DATA
V
R
= 300 V/ 400 V/ 500 V
k
1
a
2
V
F
≤
1.05 V
I
F(AV)
= 14 A
t
rr
≤
60 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYT79 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
R
I
F(AV)
I
FSM
PARAMETER
Peak repetitive reverse voltage
Continuous reverse voltage
Average forward current
1
Non-repetitive peak forward
current.
Storage temperature
Operating junction temperature
CONDITIONS
BYT79
T
mb
≤
147˚C
square wave;
δ
= 0.5;
T
mb
≤
117 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
-
-
-
-
-
-40
-
MIN.
-300
300
300
MAX.
-400
400
400
14
130
143
150
150
-500
500
500
UNIT
V
V
A
A
A
˚C
˚C
T
stg
T
j
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
in free air.
-
TYP.
-
60
MAX.
2.0
-
UNIT
K/W
K/W
1
Neglecting switching and reverse current losses
September 1998
1
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 15 A; T
j
= 150˚C
I
F
= 30 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100 ˚C
I
F
= 2 A to V
R
≥
30 V;
dI
F
/dt = 20 A/µs
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs
I
F
= 10 A to V
R
≥
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100˚C
I
F
= 10 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
BYT79 series
TYP.
0.90
1.17
5.0
0.2
50
50
4.0
2.5
MAX.
1.05
1.38
50
0.8
60
60
5.2
-
UNIT
V
V
µA
mA
nC
ns
A
V
I
dI
F
dt
F
25
PF / W
Vo = 0.9075 V
Rs = 0.0095 Ohms
BYT79
Tmb(max) / C
100
D = 1.0
110
20
t
rr
time
15
0.2
10
0.1
0.5
120
130
I
t
p
t
p
D=
T
Q
I
R
I
s
10%
100%
5
140
T
t
rrm
0
0
5
10
15
IF(AV) / A
20
150
25
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 0.9075 V
Rs = 0.0095 Ohms
I
F
20
BYT79
Tmb(max) / C
110
a = 1.57
15
2.2
1.9
2.8
120
time
VF
V
VF
time
10
4
130
5
140
fr
0
0
5
10
150
15
IF(AV) / A
Fig.2. Definition of V
fr
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
September 1998
2
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast
BYT79 series
1000
trr / ns
1000
Qs / nC
IF=20 A
IF = 20 A
100
1A
100
2A
10
Tj = 25 C
Tj = 100 C
1
1
10
dIF/dt (A/us)
100
10
1
1.0
10
-dIF/dt (A/us)
100
Fig.5. Maximum t
rr
at T
j
= 25˚C and 100˚C
Fig.8. Maximum Q
s
at T
j
= 25˚C
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF= 20 A
1
IF=1A
1
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
Tj = 25 C
Tj = 100 C
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
10us
T
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV79E
10s
Fig.6. Maximum I
rrm
at T
j
= 25˚C and 100˚C.
Fig.9. Transient thermal impedance Z
th
= f(t
p
)
50
IF / A
Tj = 25 C
Tj = 150 C
BYT79
40
30
typ
20
max
10
0
0
0.5
1
VF / V
1.5
2
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
September 1998
3
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYT79 series
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
3,0 max
not tinned
3,0
15,8
max
13,5
min
1,3
max
1
(2x)
2
0,9 max (2x)
0,6
2,4
5,08
Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
4
Rev 1.300
FPGA/CPLD
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