BYC15X-600
Rectifier diode, hyperfast
Rev. 01 — 29 November 2007
Product data sheet
1. Product profile
1.1 General description
Hyperfast, epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features
I
Extremely fast switching
I
Low reverse recovery current
I
Reduces switching loss in associated
MOSFET
I
Low thermal resistance
I
Isolated package
1.3 Applications
I
Half-bridge or full-bridge switched-mode
I
Continuous Current Mode (CCM) Power
power supplies
Factor Correction (PFC)
I
Half-bridge lighting ballasts
1.4 Quick reference data
I
V
RRM
≤
600 V
I
V
F
= 1.32 V (typ)
I
I
F(AV)
≤
15 A
I
t
rr
= 19 ns (typ)
2. Pinning information
Table 1.
Pin
1
2
mb
Pinning
Description
cathode (k)
anode (a)
mounting base; isolated
mb
k
a
001aaa020
Simplified outline
Symbol
1
2
SOD113 (2-lead TO-220F)
NXP Semiconductors
BYC15X-600
Rectifier diode, hyperfast
3. Ordering information
Table 2.
Ordering information
Package
Name
BYC15X-600
TO-220F
Description
Version
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOD113
2-lead TO-220 ‘full pack’
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
storage temperature
junction temperature
square waveform;
δ
= 1.0; T
h
≤
100
°C
square waveform;
δ
= 0.5; T
h
≤
25
°C
square waveform;
δ
= 0.5; T
h
≤
25
°C;
t
p
= 25
µs
t = 10 ms; sinusoidal waveform
t = 8.3 ms; sinusoidal waveform
Conditions
Min
-
-
-
-
-
-
-
−40
-
Max
600
600
500
15
30
200
220
+150
150
Unit
V
V
V
A
A
A
A
°C
°C
BYC15X-600_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 29 November 2007
2 of 10
NXP Semiconductors
BYC15X-600
Rectifier diode, hyperfast
5. Thermal characteristics
Table 4.
Symbol
R
th(j-h)
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
-
-
Typ
-
55
Max
3.6
-
Unit
K/W
K/W
thermal resistance from junction to heatsink with heatsink compound;
see
Figure 1
thermal resistance from junction to ambient in free air
10
Z
th(j-h)
(K/W)
1
001aah190
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 1. Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 5.
Isolation limiting values and characteristics
T
h
= 25
°
C unless otherwise specified.
Symbol
V
isol(RMS)
Parameter
RMS isolation voltage
Conditions
from all terminals to external heatsink;
f = 50 Hz to 60 Hz; sinusoidal waveform;
relative humidity
≤
65 %; clean and dust free
from pin 1 (cathode) to external heatsink;
f = 1 MHz
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BYC15X-600_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 29 November 2007
3 of 10
NXP Semiconductors
BYC15X-600
Rectifier diode, hyperfast
7. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 15 A; T
j
= 150
°C;
see
Figure 2
I
F
= 30 A; T
j
= 150
°C;
see
Figure 2
I
F
= 15 A; see
Figure 2
I
R
reverse current
V
R
= 600 V
V
R
= 500 V; T
j
= 100
°C
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A to V
R
= 30 V; dI
F
/dt = 50 A/µs;
see
Figure 3
I
F
= 15 A to V
R
= 400 V; dI
F
/dt = 500 A/µs;
see
Figure 3
T
j
= 25
°C
T
j
= 100
°C
I
RM
peak reverse recovery
current
I
F
= 15 A to V
R
= 400 V; T
j
= 125
°C;
see
Figure 3
dI
F
/dt = 50 A/µs
dI
F
/dt = 500 A/µs
V
FR
forward recovery
voltage
I
F
= 15 A; dI
F
/dt = 100 A/µs; see
Figure 4
-
-
-
3.0
9.5
8
7.5
12
11
A
A
V
-
-
19
32
-
40
ns
ns
-
35
55
ns
Min
-
-
-
-
-
Typ
1.32
1.64
1.89
12
1.1
Max
2.03
2.34
2.9
200
3.0
Unit
V
V
V
µA
mA
Static characteristics
BYC15X-600_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 29 November 2007
4 of 10
NXP Semiconductors
BYC15X-600
Rectifier diode, hyperfast
50
I
F
(A)
40
003aac082
30
20
(1)
(2)
(3)
10
0
0
1
2
3
V
F
(V)
4
(1) T
j
= 150
°C;
typical values
(2) T
j
= 150
°C;
maximum values
(3) T
j
= 25
°C;
maximum values
Fig 2. Forward current as a function of forward voltage
I
F
I
F
dl
F
dt
t
rr
time
time
10 %
Q
r
100 %
V
F
I
R
I
RM
001aab911
V
F
V
FR
time
001aab912
Fig 3. Reverse recovery definitions
Fig 4. Forward recovery definitions
BYC15X-600_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 29 November 2007
5 of 10
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
