CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 1/9
MTN2302S3
Features
•
Simple drive requirement
•
Small package outline
•
Capable of 2.5V gate drive
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
A
=25°C
R
DSON(MAX)
@V
GS
=4.5V, I
D
=3.6A
R
DSON(MAX)
@V
GS
=2.5V, I
D
=3.1A
20V
2.9A
55mΩ(typ.)
65mΩ(typ.)
Symbol
MTN2302S3
Outline
SOT-323
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTN2302S3-0-T1-G
Package
Shipping
SOT-323
3000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTN2302S3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 2/9
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=4.5V, T
A
=25°C
(Note 3)
Continuous Drain Current @V
GS
=4.5V, T
A
=70°C
(Note 3)
Continuous Drain Current @V
GS
=4.5V, T
A
=25°C
(Note 4)
Continuous Drain Current @V
GS
=4.5V, T
A
=70°C
(Note 4)
Pulsed Drain Current
(Notes 1, 2)
Maximum Power Dissipation@ T
A
=25℃
Operating Junction and Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Tj, Tstg
Limits
20
±12
2.9
2.3
2.3
1.8
30
0.7
(Note 3)
0.43
(Note 4)
-55~+150
Unit
V
A
W
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board, 2 oz. copper.
4. Surface mounted on
minimum copper pad, 2 oz. copper.
(Note 3)
(Note 4)
Symbol
R
θJA
R
θJC
Limit
178
290
90
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
*G
FS
Dynamic
Ciss
Coss
Crss
MTN2302S3
Min.
20
-
0.5
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
-
-
55
65
4
440
61
59
Max.
-
-
1.2
±
100
1
10
66
85
-
-
-
-
Unit
V
V/°C
V
nA
μA
mΩ
S
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=
±
12V, V
DS
=0V
V
DS
=20V, V
GS
=0V
V
DS
=20V, V
GS
=0V (Tj=70
°C)
I
D
=2A, V
GS
=4.5V
I
D
=2A, V
GS
=2.5V
V
DS
=5V, I
D
=2A
pF
V
DS
=10V, V
GS
=0V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
t
d(ON)
t
r
t
d(OFF)
t
f
Qg
Qgs
Qgd
Source-Drain Diode
*V
SD
I
S
I
SM
-
-
-
-
-
-
-
-
-
-
4.5
7.4
19
7.2
4.4
0.7
1.7
0.8
-
-
-
-
-
-
-
-
-
1.2
1
10
ns
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 3/9
V
DS
=10V, I
D
=2A, V
GS
=5V
R
G
=6
Ω
, R
D
=2.8
Ω
nC
V
DS
=10V, I
D
=2A, V
GS
=4.5V
V
A
V
GS
=0V, I
S
=1.6A
V
D
=V
G
=0V, V
S
=1.2V
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Recommended Soldering Footprint
MTN2302S3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
4.5V
3.5V
3V
2.5V
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 4/9
Static Drain-Source On-resistance vs Ambient Temperature
R
DS(on)
, Normalized Static Drain-Source
On-state Resistance
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
R
DSON
@Tj=25°C : 55mΩ typ.
I
D
=2A, V
GS
=4.5V
10
V
GS
=2V
8
I
D
, Drain Current(A)
6
4
V
GS
=1.5V
2
0
0
0.5
1
1.5
2
2.5
3
-60
-20
V
DS
, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
20
60
100
140
T
A
, Ambient Temperature(°C)
180
Forward Drain Current vs Source-Drain Voltage
10000
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
I
F
, Forward Drain Current(mA)
Tj=25°C
V
GS
=0V
1000
V
GS
=1.5V
V
GS
=2V
V
GS
=2.5V
100
100
10
V
GS
=4.5V
10
1
10
100
1000
I
D
, Drain Current(mA)
10000
1
0.4
0.6
0.8
1
1.2
V
SD
, Source Drain Voltage(V)
Capacitance vs Reverse Voltage
1.4
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
450
400
350
300
250
200
150
100
50
0
0
1
2
3
4
V
GS
, Gate-Source Voltage(V)
5
T
A
=25°C
I
D
=2A
1000
Ciss
Capacitance-(pF)
100
Coss
Crss
f=1MHz
10
0
2
4
6
8 10 12 14 16
V
DS
, Drain-to-Source Voltage(V)
18
20
MTN2302S3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Maximum Safe Operating Area
V
GS(th)
, Normalized Gate SourceThreshold
Voltage
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 5/9
Gate Threshold Voltage vs Ambient Temperature
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
I
D
=250
μ
A
100
R
DS(ON)
Limited
100μs
1ms
10ms
I
D
, Drain Current (A)
10
1
0.1
Ta=25°C, R
θJA
=178°C/W ,
V
GS
=10V, Tj=150°C
Single pulse
100ms
1s
DC
0.01
0.01
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
-60
-20
20
60
100
140
Junction Temperature-Tj(°C)
180
Gate Charge Characteristics
10
Maximum Drain Current vs Junction Temperature
4.5
4
I
D
, Maximum Drain Current(A)
V
GS
, Gate-Source Voltage(V)
8
V
DS
=10V
I
D
=2A
3.5
3
2.5
2
1.5
1
0.5
0
25
T
A
=25°C, V
GS
=10V, R
θJA
=178°C/W
6
4
2
0
0
2
4
6
8
Qg, Total Gate Charge(nC)
10
50
75
100
125
Tj, Junction Temperature(°C)
150
175
Drain Current vs Gate-Source Voltage
10
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Brekdown Voltage vs Ambient Temperature
1.4
9
8
I
D
, Drain Current(A)
7
6
5
4
3
2
1
0
0
1
V
DS
=3V
T
A
=25°C
1.3
1.2
1.1
1
0.9
0.8
0.7
I
D
=250
μ
A,
V
GS
=0V
2
3
4
V
GS
, Gate-Source Voltage(V)
5
0.6
-100
-50
0
50
100
150
Tj, Junction Temperature(°C)
200
MTN2302S3
CYStek Product Specification
FPGA/CPLD
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