CYStech Electronics Corp.
N- AND P-Channel Enhancement Mode MOSFET
Spec. No. : C945H8
Issued Date : 2015.06.01
Revised Date :
Page No. : 1/13
MTD120C10KH8
Features
•
Simple drive requirement
•
Low on-resistance
•
Fast switching speed
•
ESD protected
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=10V(-10V), T
A
=25°C
I
D
@V
GS
=10V(-10V), T
C
=25°C
R
DSON(typ)
@V
GS
=10V(-10V)
R
DSON(typ)
@V
GS
=5V(-5V)
N-CH
100V
2.8A
8.0A
126mΩ
134mΩ
P-CH
-100V
-3.4A
-12A
91mΩ
125mΩ
Equivalent Circuit
MTD120C10KH8
Outline
DFN5×6
Pin 1
G：Gate S：Source D：Drain
Ordering Information
Device
MTD120C10KH8-0-T6-G
Package
DFN 5
×6
Shipping
3000 pcs / Tape & Reel
(Pb-free lead plating & halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD120C10KH8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
T
A
=25
°C,
V
GS
=10V (-10V)
Continuous Drain Current T
A
=70
°C,
V
GS
=10V (-10V)
T
C
=25
°C,
V
GS
=10V (-10V)
T
C
=100
°C,
V
GS
=10V (-10V)
Pulsed Drain Current
(Note 1 & 2)
T
A
=25
°C
Power Dissipation
T
A
=70
°C
T
C
=25
°C
T
C
=100
°C
Operating Junction and Storage Temperature Range
Symbol
BV
DSS
V
GS
I
DSM
I
D
I
DM
P
DSM
P
D
Tj; Tstg
Spec. No. : C945H8
Issued Date : 2015.06.01
Revised Date :
Page No. : 2/13
Limits
N-channel
P-channel
100
-100
±20
2.8
2.2
8.0
5.1
25
±20
-3.4
-2.7
-12
-7.6
-30
2.5
(Note 3)
1.6
(Note 3)
21
8.4
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
6
50
(Note 3)
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad.
N-Channel Electrical Characteristics
(Tc=25°C, unless otherwise specified)
Symbol
Min.
100
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
126
134
5.5
290
44
22
6.4
16.4
59
44.4
Max.
-
3.0
±10
1
25
165
175
-
-
-
-
-
-
-
-
Unit
V
μA
mΩ
S
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±20V, V
DS
=0V
V
DS
=80V, V
GS
=0V
V
DS
=80V, V
GS
=0, Tj=125°C
I
D
=2A, V
GS
=10V
I
D
=1.5A, V
GS
=5V
V
DS
=10V, I
D
=2A
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
*G
FS
Dynamic
Ciss
Coss
Crss
*td
(ON)
*tr
*td
(OFF)
*tf
MTD120C10KH8
pF
V
DS
=20V, V
GS
=0, f=1MHz
ns
V
DS
=50V, I
D
=1A, V
GS
=10V, R
G
=6
Ω
CYStek Product Specification
CYStech Electronics Corp.
*Qg
*Qgs
*Qgd
Body Diode
*I
S
-
-
-
-
8
1.1
2.3
-
-
-
-
3
12
1.3
-
-
nC
Spec. No. : C945H8
Issued Date : 2015.06.01
Revised Date :
Page No. : 3/13
V
DS
=80V, I
D
=2A, V
GS
=10V
*I
SM
*V
SD
-
-
-
0.8
20
18
A
V
V
GS=
0V, I
S
=2A
*trr
*Qrr
-
-
ns
nC
I
F
=2A dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
P-Channel Electrical Characteristics
(Tc=25°C, unless otherwise specified)
Symbol
Min.
-100
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
91
125
5.5
973
128
48
9.8
17.6
57.2
53.2
19
3.5
6.0
-
Max.
-
-3.0
±10
-1
-25
120
165
-
-
-
-
-
-
-
-
-
-
-
-3.4
-14
-1.3
Unit
V
μA
mΩ
S
Test Conditions
V
GS
=0, I
D
=-250μA
V
DS
=VGS, I
D
=-250μA
V
GS
=±20V, V
DS
=0
V
DS
=-80V, V
GS
=0
V
DS
=-80V, V
GS
=0, Tj=125°C
I
D
=-2A, V
GS
=-10V
I
D
=-1.5A, V
GS
=-5V
V
DS
=-10V, I
D
=-2A
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
*G
FS
Dynamic
Ciss
Coss
Crss
*td
(ON)
*tr
*td
(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*I
S
pF
V
DS
=-20V, V
GS
=0, f=1MHz
ns
V
DS
=-50V, I
D
=-1A, V
GS
=-10V, R
G
=6
Ω
nC
V
DS
=-80V, I
D
=-2.4A, V
GS
=-10V
*I
SM
*V
SD
-
-
-
-0.75
22
22.7
A
V
V
GS
=0V, I
S
=-2A
*trr
*Qrr
-
-
-
-
ns
nC
I
F
=-2A dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTD120C10KH8
CYStek Product Specification
CYStech Electronics Corp.
Recommended Soldering Footprint
Spec. No. : C945H8
Issued Date : 2015.06.01
Revised Date :
Page No. : 4/13
unit : mm
MTD120C10KH8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
12
10
I
D
, Drain Current (A)
8
6
4
2
0
0
1
2
3
4
V
DS
, Drain-Source Voltage(V)
5
3V
V
GS
=2.5V
3.5V
10V, 9V, 8V, 7V, 6V, 5V, 4V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C945H8
Issued Date : 2015.06.01
Revised Date :
Page No. : 5/13
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
I
D
=250
μ
A,
V
GS
=0V
0.6
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1
0.8
0.6
0.4
0.2
Tj=25°C
V
GS
=4.5V
V
GS
=10V
Tj=150°C
100
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
300
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
280
260
240
220
200
180
160
140
120
100
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
I
D
=2A
2.4
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
2
1.6
1.2
0.8
0.4
V
GS
=10V, I
D
=2A
R
DSON
@Tj=25°C : 126mΩtyp.
V
GS
=4.5V, I
D
=1.5A
R
DSON
@Tj=25°C : 134mΩ typ
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD120C10KH8
CYStek Product Specification
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