SEMICONDUCTOR
NK60TP Series
Three-Phase Bridge + Thyristor, 60A
( Low Profile Package )
RoHS
RoHS
Nell High Power Products
FEATURES
Three-phase bridge and a thyristor
High surge current capability
Planar thyristor chip
Heat transfer and isolation through direct
copper bonded aluminium oxide ceramic (DBC)
Low thermal resistance
Compliant to RoHS
lsolation voltage up to 2500V
Compact package, one screw mounting
1,2
8,9 13,14
Applications
lnverter for AC or DC motor control
Soft starters
Switching power supply
Light control
Temperature control
21
19
15, 16
17
27, 28
ADVANTAGE
lnternational standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
Small thermal resistance
Weight: 30g (1.06 oz.)
I
F(AV)
V
RRM
I
FSM
I
R
V
FM
/ V
TM
T
J max.
PRIMARY CHARACTERRISTICS
60A
1200V to 1600V
1000A
10
µA
1.45V / 1.6V
150ºC
Maximum Ratings for Diodes
MAJOR RATINGS AND CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
NK60TP
PARAMETER
SYMBOL
UNIT
12
16
1600
1700
60
1000
V
V
A
A
1200
1300
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
Output DC current three-phase full wave, T
c
= 80°C
Peak forward surge current single sine-wave superimposed on
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
Operating junction temperature range
Storage temperature range
V
RRM
/ V
RRM
V
RSM
I
O
I
FSM
I
2
t
T
J
T
STG
5000
-40
to 150
-40
to 125
A
2
s
ºC
ºC
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Page 1 of 5
SEMICONDUCTOR
NK60TP Series
RoHS
RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
I
F
= 75A
T
C
= 25°C
T
C
= 150°C
SYMBOL
NK60TP
UNIT
12
V
F
I
R
1.45
10
6
16
V
µA
mA
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diod
Maximum Ratings fo Thyristor
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum peak, one-cycle, on-state
non-reptitive surge current
SYMBOL
I
T(AV)
TEST CONDITIONS
180° conduction, half sine wave, 50Hz
80
t
= 10ms
I
TSM
VALUES
60
UNIT
A
ºC
1500
A
t
= 8.3ms
t
= 10ms
No voltage
reapplied
1570
Sine half wave,
initial T
J
= T
J
maximum
11250
10230
7870
7160
112.5
1.8
150
250
kA
2
√
s
A
2
s
Maximum l
2
t for fusing
I
2
t
t
= 8.3ms
t
= 10ms
t
= 8.3ms
100%V
RRM
reapplied
Maximum l
2
√t
for fusing
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
I
2
√t
V
TM
I
H
I
L
t = 0.1 to 10 ms, no voltage reapplied
l
TM
= 200A, T
J
= 25°C,
180 ° conduction
Anode supply = 6V, resistive load, T
J
= 25°C
V
mA
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
50 to 120
UNIT
Typical turn-off time
t
q
I
TM
= 300A, dI/dt = 15 A/µs, T
J
= T
J
maximum
V
R
= 50V, dV/dt = 20 V/dt, gate 0V, 100Ω
µs
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation Voltage
Critical rate of rise of
off-state voltage
SYMBOL
l
RRM
l
DRM
TEST CONDITIONS
VALUES
20
2500
1000
UNIT
mA
V
V/μs
T
J
= 125°C
60 Hz, circuit to base,
all terminals shorted, 25°C, 60s
T
J
= T
J
maximum,
exponential to 67% V
DRM
V
ISO
dV/dt
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Page 2 of 5
SEMICONDUCTOR
NK60TP Series
RoHS
RoHS
Nell High Power Products
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive
gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
Maximum required DC
gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turmed-on current
SYMBOL
P
GM
P
G(AV)
l
GM
t
p
≤ 5ms,
T
J
=
T
J
maximum
-V
GT
V
GT
T
J
= 25°C
l
GT
V
GD
T
J
= T
J
maximum, 67% V
DRM
applied
l
GD
dl/dt
T
J
= 25°C, l
GM
= 1.5A, t
r
≤ 0.5
µs
5
150
mA
A/µs
10
V
Anode supply = 6V,
resistive load; R
a
= 1Ω
2
100
0.25
mA
V
TEST CONDITIONS
t
p
≤ 5ms,
T
J
=
T
J
maximum
f =
50Hz,
T
J
=
T
J
maximum
VALUES
10
5
3
A
UNIT
W
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature
range
Storage temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
SYMBOL
T
J
T
stg
R
th(j-c)
R
thCS
DC operation
TEST CONDITIONS
VALUES
-40 to 150
°C
-40 to 125
1.0
°C/W
Mounting surface, smooth, flat and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
0.30
UNITS
Mounting torque, ±10%
module to heatsink, M4
2
N.m
30
Approximate weight
1.06
g
oz.
Ordering Information Tabel
Device code
NK
1
60
2
TP
3
12
4
1
2
3
4
-
-
-
-
Nell’s Low Profile Module
Current rating : I
(TAV)
/ I
O
Circuit configuration type : “TP” for 3-phase bridge + thyristor
Voltage code : code x 100 = V
RRM
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Page 3 of 5
SEMICONDUCTOR
NK60TP Series
RoHS
RoHS
Nell High Power Products
Fig.1 Power dissipation per module vs.
bridge output current
500
100
Fig.2 Forward current derating curve
Power dissipation P
D
(W)
300
Pe
rM
od
ul
e
Forward current, I
O
(A)
400
80
60
200
Pe
r
rB
i dg
e
40
100
Thy
Per
r i st
or
20
0
0
20
40
60
80
100
0
0
50
100
150
Bridge output current, I
O
(A)
Case temperature, Tc (°C)
Fig.3 Transient thermal impedance
1.0
2000
Fig.4 Max non-repetitive forward surge current
Transient thermal impedance, Z
th(j-c)
0.8
0.6
Peak on-state current, I
FSM /
I
TSM
(A)
50HZ
Pe
1000
Per
Di o
de
rT
hy
ri s
to r
0.4
0.2
Single phase half wave
T
j
=25
°C
start
0
1
10
100
0
0.001
0.01
0.1
1.0
10
100
Time, t (S)
Fig.5 On-state characteristics
1000
Typical
.
Single Thyristor
Cycles
Fig.6 Gate trigger characteristics
20
v.
20Ω
Gate voltage (V)
I
FM /
I
TM
(A)
tor
ris
hy
rT
Pe
Pe
rD
iod
e
10
BSZ
15
0W
10
V
GT
(0
.1
m
0W
(0
50
.5
s)
100
m
W
(8
m
s)
s)
1
T
J
= -40°C
25°C
125°C
P
G
(l
O
)
V
GD
l
GT
l
GD
T
j
=25
°C
10
0.5
1.0
1.5
2.0
0.1
1
10
100
1000
10
4
10
5
Gate current (mA)
Forward voltage / on-state voltage,V F / V TM (V)
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Page 4 of 5
SEMICONDUCTOR
NK60TP Series
RoHS
RoHS
Nell High Power Products
2.50(typ.)
10.0
C0.25(typ.)
1
2
3
4
5
6
7
8
9
10
45.0
11
12
13
14
2-
Ø
5.0 Thru.
Φ
14.50
28
.
50
5.20
22
.
75
31.00
15.00
Ø
12.0
Ø
4.40
Thru.
1.50(typ.)
15
16
17
18
19
20
21
22
23
24
25
26
27
28
11.00
14.00
19.50
22.50
25.50
27.50
29.50
32.50
35.50
41.00
44.00
47.00
51.00
10.5
3.50(typ.)
Ø
1.60
(typ.)
20.00
1.50(typ.)
53.75
55.00
Ø
1.50
4.00
0
1.25
8.00
10.0
(typ.)
12.00
10.50
10.00
Dimension Unit : mm
“TP”Circuit
Configuration:
1,2
8,9 13,14
21
19
15, 16
17
27, 28
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Page 5 of 5
2.25
传感器
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