SEMICONDUCTOR
MTP300 Series
Three-Phase Bridge Rectifier, 300A
MTP30008 Thru MTP30018
RoHS
RoHS
N
ell
High Power Products
4-
ø
6.50
51.00
~
~
~
52.50
33.50
+
51.00
94.00
108.00
-
2-M8 Screw
3-M6 Screw
32.5
FEATURES
UL recognition file number E320098
Typical IR less than 5.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
TYPICAL APPLICATIONS
DC power supplies for apparatus device
Input rectifying power supplies for PWM converters
Field supplies for DC motors
Inverter welders
PRIMARY CHARACTERRISTICS
I
F(AV)
300A
800V to 1800V
4000A
20
µA
1.30V
150ºC
V
RRM
I
FSM
I
R
V
F
T
J max.
ADVANTAGE
International standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
Weight: 600g (21.2 ozs)
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Page 1 of 3
7.5
42.0
67.0
SEMICONDUCTOR
MTP300 Series
RoHS
RoHS
N
ell
High Power Products
MAJOR RATINGS AND CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
MTP300
PARAMETER
SYMBOL
UNIT
08
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
Maximum DC blocking voltage
Maximum average forward rectified output current at T
C
= 100°C
Peak forward surge current single sine-wave superimposed on
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
I
2
t
V
ISO
T
J
T
STG
V
RRM
V
RSM
V
DC
I
F(AV)
I
FSM
10
1000
1100
1000
12
1200
1300
1200
300
4000
16
1600
1700
1600
18
1800
1900
1800
V
V
V
A
A
800
900
800
66.4
2500
-40
to 150
-40
to 125
KA
2
s
V
ºC
ºC
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
MTP300
UNIT
08
V
F
I
R
10
12
1.30
20
10
16
18
V
µA
mA
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diod
I
F
= 300A
T
A
= 25°C
T
A
= 150°C
THERMAL AND MECHANICAC
(T
A
= 25°C unless otherwise noted)
MTP300
PARAMETER
TEST CONDITIONS
SYMBOL
UNIT
08
Typical thermal resistance
junction to case
Mounting
torque
± 10 %
to heatsink M6
to terminal M8
10
12
0.08
4
16
18
°C/W
Single-side heat dissipation, sine
half wave
A mounting compound is recommended
and the torque should be rechecked after
a period of
3
hours to allow for the spread
of the compound.
R
θJC
(1)
Nm
10
600
g
Approximate weight
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
Device code
MTP
1
300
2
16
3
1
2
3
-
-
-
Module type: ”MTP” for 3Ø
Brıdge
I
F(AV)
rating:"300" for 300 A
Voltage code:code x
100 =
V
RRM
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Page 2 of 3
SEMICONDUCTOR
MTP300 Series
RoHS
RoHS
N
ell
High Power Products
Fig.1 Forward current vs. Forward voltage
3
2.5
2.0
1.5
1.0
0.5
0
10
100
Peak on-state current (A)
1
000
T
J
=25°C
Fig.2 Thermal lmpedance (junction to case)
0.08
Transient Thermal Impedance (°C/W)
Peak on-state voltage (V)
0.06
0.04
0.02
0
0.001
0.01
0.1
Time (s)
1
10
Fig.3 Power Consumption vs. Avergage Current
1200
On-state Power consumption (W)
1050
900
750
600
450
300
150
0
0
100
200
300
400
On-state average current (A)
On-state average current(A)
Fig.4 Case Temperature vs. O-state Average Current
400
300
200
100
0
0
30
60
90
120
150
180
Case Temperature (°C)
Fig.5 Forward Surge Current vs. Cycle
4000
80
70
Forward surge current (A)
3000
I t (KA S)
60
50
40
30
20
10
0
1
10
Cycle @ 50Hz
100
0
1
Fig.6 I
2
t characteristic
2000
1000
2
2
5
Time (ms)
10
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Page 3 of 3
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