PD-90426D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number
IRFF120
B
VDSS
R
DS(on)
100V
0.30Ω
I
D
6.0A
®
IRFF120
JANTX2N6788
JANTXV2N6788
REF:MIL-PRF-19500/555
100V, N-CHANNEL
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
®
T0-39
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
6.0
3.5
24
20
0.16
±20
0.242
2.2
2.0
5.5
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
Units
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1
09/03/07
IRFF120, JANTX2N6788, JANTXV2N6788
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
∆BV
DSS/∆TJ
RDS(on)
VGS(th)
g fs
IDSS
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
—
—
—
2.0
1.5
—
—
—
—
7.7
0.7
2.0
—
—
—
—
—
Typ Max Units
—
0.10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
—
—
0.30
0.35
4.0
—
25
250
100
-100
18
4.0
9.0
40
70
40
70
—
V
V/°C
Ω
V
S
µA
nA
nC
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 3.5A
Ã
VGS =10V, ID = 6.0A
Ã
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 3.5A
Ã
VDS= 80V, VGS=0V
VDS = 80V
VGS = 0V, TJ = 125°C
VGS = 20V
V GS = -20V
VGS =10V, ID = 6.0A
VDS = 50V
VDD = 35V, ID = 6.0A,
VGS = 10V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
350
150
24
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
6.0
24
1.8
240
2.0
A
V
ns
µC
Test Conditions
T
j
= 25°C, IS =6.0A, VGS = 0V
Ã
Tj = 25°C, IF = 6.0A, di/dt
≤
100A/µs
VDD
≤
50V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
—
6.25
175
Units
°C/W
Test Conditions
Typical socket mount.
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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IRFF120, JANTX2N6788, JANTXV2N6788
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
10
4.5V
1
1
4.5V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
ID, Drain-to-Source Current (A)
T J = 25°C
T J = 150°C
10
VDS = 50V
60µs PULSE WIDTH
1
4
5
6
7
8
9
10
11
12
13
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs.Temperature
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3
IRFF120, JANTX2N6788, JANTXV2N6788
13 a & b
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
ISD, Reverse Drain Current (A)
10
T J = 150°C
T J = 25°C
1.0
VGS = 0V
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFF120, JANTX2N6788, JANTXV2N6788
V
DS
V
GS
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
D.U.T.
+
-
V
DD
Fig 10a.
Switching Time Test Circuit
V
DS
90%
Fig 9.
Maximum Drain Current Vs.
CaseTemperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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