PD-96982
Radiation Hardended,
Solid-State Relay
with Buffered Inputs
Product Summary
Part
Number
RDHA710SE10A2SK
RDHA710SE10A2SK
Dual, 100V, 10A
Breakdown
Voltage
100V
g
Current
10A
tr / tf
Controlled
Logic Drive
Voltage
3.3V
8-PIN SURFACE MOUNT
Description
The RDHA710SE10A2SK is a radiation hardened
dual solid-state relay in a hermetic package. It is
configured as a dual, single-pole-single-throw
(SPST) normally open relay with common input
supply. This device is characterized for 100 krad(Si)
total ionizing dose, and neutron fluence level of
1.8E
12
n/cm
2
. The input and output MOSFETs utilize
International Rectifier’s R5 technology. T h e
RDHA710SE10A2SK is optically coupled and
actuated by standard logic inputs.
Features:
n
Total Dose Capability to 100 krad(Si)
n
Neutron Fluence Level of 1.8E
12
n/cm
2
n
Optically Coupled
n
1000V
DC
Input to Output Isolation
n
Buffered Input Stage
n
3.3V Compatible Logic Level Input
n
Controlled Switching Times
n
Hermetically Sealed Package
Absolute Maximum Ratings per Channel @ Tj=25°C (unless otherwise specified)
Output Maximum Voltage
Output Current
fg
g
iÃ
Parameter
Symbol
V
S
I
O
V
IN
I
IN
V
DD
I
DD
P
DISS
T
J
T
S
T
L
Value
100
12
±7.5
±10
10
25
60
-55 to +125
-65 to +150
300
Units
V
A
V
mA
V
mA
W
°C
Input Buffer Voltage - (pins 4 & 6)
Input Buffer Current
Input Supply Voltage (pin 5)
Input Supply Current
e
iÃ
Power Dissipation
fg
Lead Temperature
Operating Temperature Range
Storage Temperature Range
For notes, please refer to page 3
www.irf.com
1
03/29/06
RDHA710SE10A2SK
General Characteristics per Channel @ -55°C
d
T
C
d
+125°C
(Unless Otherwise Specified)
Parameter
Input Buffer Threshold Voltage
Group A
Test Conditions
V
DD
= 5.0V, I
O
= 10A
V
I-O
= 1.0KVdc, dwell = 5.0s
V
IN
= 0.1V, f = 1.0MHz, V
S
=25V
T
C
= 25°C
V
IN
= 3.3V, V
DD
= 5.0V
Symbol Min. Typ. Max. Units
V
IN(TH)
I
I-O
C
OSS
R
THJC
3.0
--
--
--
6.0
--
--
365
--
--
--
1.0
--
1.7
--
V
µA
pF
°C/W
MHrs
ce
Subgroups
1
Input-to-Output Leakage Current
c
Thermal Resistance
c
Output Capacitance
MTBF (Per Channel)
c
,
f
MIL-HDBK-217F, SF@Tc= 25°C
Pre-Irradiation
Electrical Characteristics per Channel @ -55°C
d
T
C
d
+125°C
(Unless Otherwise Specified)
Parameter
Group A
Subgroups
Output On-Resistance
Output Leakage Current
Input Supply Current
Input Buffer Current
Turn-On Delay
1
2
1
2
1,2,3
1
2,3
1,2,3
1,2,3
1,2,3
1,2,3
V
IN
= 3.3V
V
DD
= 5.0V, I
O
= 10A
V
IN
= 0.1V, V
S
= 100V
V
IN
= 0.1V, V
S
= 80V
V
DD
= 5.0V, I
O
= 10A
V
DD
= 10V, I
O
= 10A ‚
V
IN
= 3.3V
V
IN
=3.3V, V
DD
=5.0V, V
S
=30V
RC = 7.0Ω/100µF, PW = 50ms
V
IN
=0.1V, V
DD
=5.0V, V
S
=30V
RC = 7.0Ω/100µF, PW = 50ms
V
IN
=3.3V, V
DD
=5.0V, V
S
=30V
RC = 7.0Ω/100µF, PW = 50ms
V
IN
=0.1V, V
DD
=5.0V, V
S
=30V
RC = 7.0Ω/100µF, PW = 50ms
R
DS(ON)
I
O
I
DD
I
IN
t
on
t
off
t
r
t
f
Test Conditions
Symbol Min. Typ. Max. Units
--
--
--
--
--
--
--
--
--
--
--
--
0.070 0.100
0.125 0.165
--
--
10
--
--
--
6.5
25
1.3
5.5
25
250
15
25
1.0
3.0
25
50
ms
6.0
18
Ω
µA
mA
µA
ci
h
h
Turn-Off Delay
Rise Time ,
Fall Time ,
dh
dh
For notes, please refer to page 3
2
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RDHA710SE10A2SK
Post Total Dose Irradiation
,,
Electrical Characteristics per Channel @ 25°C
(Unless Otherwise Specified)
Parameter
Output On-Resistance
Input Supply Current
Output Leakage Current
Input Buffer Current
Turn-On Delay
Turn-Off Delay
Rise Time
Fall Time
Group A
Subgroups
1
1
1
1
1
1
1
1
Test Conditions
V
IN
= 3.3V, V
DD
= 5.0V, I
O
= 10A
V
DD
= 5.0V, I
O
= 10A
V
IN
= 0.1V, V
S
= 100V
V
IN
= 3.3V
V
IN
=3.3V, V
DD
=5.0V, V
S
=30V
RC = 7.0Ω/100µF, PW = 50ms
V
IN
=0.1V, V
DD
=5.0V, V
S
=30V
RC = 7.0Ω/100µF, PW = 50ms
V
IN
=3.3V, V
DD
=5.0V, V
S
=30V
RC = 7.0Ω/100µF, PW = 50ms
V
IN
=0.1V, V
DD
=5.0V, V
S
=30V
RC = 7.0Ω/100µF, PW = 50ms
Symbol Min. Typ. Max. Units
R
DS(ON)
I
DD
I
O
I
IN
t
on
t
off
t
r
t
f
--
--
--
--
--
--
--
--
0.070 0.100
10
--
--
6.5
25
1.3
5.5
15
25
1.0
25
50
Ω
mA
µA
h
h
dh
ms
6.0
18
dh
Notes for Maximum Ratings and Electrical Characteristic Tables
m
Specification is guaranteed by design
Rise and fall times are controlled internally
Inputs protected for V
IN
< 1.0V and V
IN
> 7.5V
Optically coupled Solid State Relays (SSRs) have relatively slow turn on and turn off times. Care must be taken to
insure that transient currents do not cause violation of SOA. If transient conditions are present, IR recommends a
complete simulation to be performed by the end user to insure compliance with SOA requirements as specified in the
IRHNJ57130 data sheet
While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for
product derating, as required for the application
Reference Figures 3 & 4 for Switching Test Circuits and Wave Form
Input Supply voltage shall not exceed 5.25V@Tc
≥
70°C
Total Dose Irradiation with Input Bias. 10mA I
DD
applied and V
DS
= 0 during Irradiation
n
o
Total Dose Irradiation with Output Bias. 80 Volts V
DS
applied and I
DD
= 0 during Irradiation
International Rectifier does not currently have a DSCC certified Radiation Hardness Assurance Program
www.irf.com
3
RDHA710SE10A2SK
25
20
I
D
, Drain Current (A)
15
10
5
0
25
50
75
100
125
150
T
C
, Case Temperature (°C)
Fig 1:
Maximum Drain Current Vs Case Temperature per Channel
Pin 1 - OUT 1+
Pin 4 - INPUT 1
O pto
Isolation
Pin 3 - GND
Pin 5 - V
DD
Pin 6 - INPUT 2
O pto
Isolation
Pin 2 - OUT 1-
Pin 8 - OUT 2+
Pin 7 - OUT 2-
Fig 2:
Typical Application
Radiation Performance
International Rectifier Radiation Hardened Solid State Relays are tested to verify their hardness capability.
The hardness assurance program at IR uses a Cobalt-60 (
60
Co) Source and heavy ion irradiation. Both pre-
and post- irradiation performance are tested and specified using the same drive circuitry and test conditions
to provide a direct comparision.
4
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RDHA710SE10A2SK
uF
Fig 3:
Switching Test Circuit (Only one channel shown)
Fig 4:
Switching Test Waveform
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5
FPGA/CPLD
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