PESD5V0X2UAMB
10 April 2014
SO
T8
83
B
Ultra low capacitance unidirectional double ESD protection
diode
Product data sheet
1. General description
Ultra low capacitance unidirectional double ElectroStatic Discharge (ESD) protection
diode in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD)
plastic package designed to protect up to two signal lines from the damage caused by
ESD and other transients.
2. Features and benefits
•
•
•
•
•
Ultra low diode capacitance: C
d
= 0.8 pF
Ultra low package height of only 0.37 mm
ESD protection up to 15 kV; IEC61000-4-2
I
PPM
= 2.5 A; IEC 61643-321 (surge)
AEC-Q101 qualified
3. Applications
•
•
•
•
High-speed data lines
Portable electronics
Communication systems
Computers and peripherals
4. Quick reference data
Table 1.
Symbol
Per diode
C
d
V
RWM
diode capacitance
reverse standoff
voltage
[1]
Measured from pin 1 or 2 to 3.
Quick reference data
Parameter
Conditions
f = 1 MHz; V
R
= 0 V
[1]
Min
-
-
Typ
0.8
-
Max
0.95
5
Unit
pF
V
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NXP Semiconductors
PESD5V0X2UAMB
Ultra low capacitance unidirectional double ESD protection diode
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
K1
K2
A
cathode (diode 1)
cathode (diode 2)
common anode
Simplified outline
1
3
2
Transparent
top view
Graphic symbol
1
2
brb051
3
DFN1006B-3 (SOT883B)
6. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0X2UAMB
DFN1006B-3
Description
DFN1006B-3: leadless ultra small plastic package; 3 solder
lands; body 1.0 x 0.6 x 0.37 mm
Version
SOT883B
Type number
7. Marking
Table 4.
Marking codes
Marking code
0100 1111
PIN 1 INDICATION
READING DIRECTION
Type number
PESD5V0X2UAMB
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig. 1.
DFN1006B-3 (SOT883B) binary marking code description
PESD5V0X2UAMB
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© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
10 April 2014
2 / 13
NXP Semiconductors
PESD5V0X2UAMB
Ultra low capacitance unidirectional double ESD protection diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
I
PPM
T
j
T
stg
T
amb
V
ESD
rated peak pulse current
junction temperature
storage temperature
ambient temperature
t
p
= 8/20 µs
[1][2]
Parameter
Conditions
Min
-
-
-55
-65
Max
2.5
150
150
150
Unit
A
°C
°C
°C
ESD maximum ratings
electrostatic discharge voltage
IEC 61000-4-2 (contact discharge)
IEC 61000-4-2 (air discharge)
machine model
MIL-STD-883 (human body model)
[1]
[2]
[3]
120
I
PP
(%)
80
100 % I
PP
; 8 µs
[3][2]
[3][2]
[2]
-
-
-
-
15
15
400
10
kV
kV
V
kV
According to IEC 61000-4-5 and IEC 61643-321.
Measured from pin 1 or 2 to 3.
Device stressed with ten non-repetitive ESD pulses.
001aaa630
001aaa631
I
PP
100 %
90 %
e
- t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
t (µs)
40
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
Fig. 2.
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig. 3.
ESD pulse waveform according to
IEC 61000-4-2
PESD5V0X2UAMB
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© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
10 April 2014
3 / 13
NXP Semiconductors
PESD5V0X2UAMB
Ultra low capacitance unidirectional double ESD protection diode
9. Characteristics
Table 6.
Symbol
Per diode
V
RWM
I
RM
V
CL
reverse standoff
voltage
reverse leakage
current
clamping voltage
V
R
= 5 V
I
PP
= 1 A; t
p
= 8/20 µs
I
PP
= 2.5 A; t
p
= 8/20 µs
V
BR
C
d
R
dyn
breakdown voltage
diode capacitance
dynamic resistance
[1]
[2]
[3]
1.0
C
d
(pF)
0.8
Characteristics
Parameter
Conditions
Min
-
[1]
[2][1]
[2][1]
[1]
[1]
[3][1]
Typ
-
1
-
-
8.8
0.8
0.65
Max
5
10
13
14
10
0.95
-
Unit
V
nA
V
V
V
pF
Ω
-
-
-
7.5
-
-
I
R
= 10 mA
f = 1 MHz; V
R
= 0 V
I
R
= 10 A
Measured from pin 1 or 2 to 3.
According to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.
aaa-011254
I
0.6
- V
CL
- V
BR
- V
RWM
V
- I
RM
- I
R
+
P-N
0.4
-
0.2
0
0
1
2
3
4
V
R
(V)
5
- I
PP
- I
PPM
006aab324
f = 1 MHz; T
amb
= 25 °C
Fig. 4.
Diode capacitance as a function of reverse
voltage; typical values
Fig. 5.
V-I characteristics for a unidirectional ESD
protection diode
PESD5V0X2UAMB
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
10 April 2014
4 / 13
NXP Semiconductors
PESD5V0X2UAMB
Ultra low capacitance unidirectional double ESD protection diode
30
I
(A)
20
aaa-011255
10
0
0
10
20
V
CL
(V)
30
t
p
= 100 ns; Transmission Line Pulse (TLP)
Fig. 6.
Dynamic resistance
PESD5V0X2UAMB
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
10 April 2014
5 / 13
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