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HIP6603BCBZ: 产品描述0.73 A HALF BRDG BASED MOSFET DRIVER, PDSO8; 产品类别半导体模拟混合信号IC; 文件大小186KB，共12页; 制造商Intersil ( Renesas ); 官网地址http://www.intersil.com/cda/home/

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HIP6603BCBZ概述

0.73 A HALF BRDG BASED MOSFET DRIVER, PDSO8

0.73 A 半桥场效应管驱动器, PDSO8

HIP6603BCBZ规格参数

参数名称	属性值
功能数量	1
端子数量	8
最大工作温度	85 Cel
最小工作温度	0.0 Cel
最大供电电压1	13.2 V
最小供电电压1	10.8 V
额定供电电压1	12 V
加工封装描述	GREEN, PLASTIC, MS-012AA, SOIC-8
无铅	Yes
欧盟RoHS规范	Yes
状态	ACTIVE
包装形状	RECTANGULAR
包装尺寸	SMALL OUTLINE
表面贴装	Yes
端子形式	GULL WING
端子间距	1.27 mm
端子涂层	MATTE TIN
端子位置	DUAL
包装材料	PLASTIC/EPOXY
温度等级	OTHER
最大供电电压2	12 V
最小供电电压2	5 V
高端驱动器	Yes
接口类型	HALF BRDG BASED MOSFET DRIVER
额定输出峰值电流限制	0.7300 A

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S IG N S

NEW DE

E D F OR

MMEND COMMENDS:

NOT RE TERSIL RE

L6 13A,

Data

Sheet

6613, IS

612A, IS

12, ISL6 14, ISL6614A

ISL66

HIP6601B, HIP6603B, HIP6604B

May 1, 2012

FN9072.8

Synchronous Rectified Buck

MOSFET Drivers

The HIP6601B, HIP6603B and HIP6604B are high-frequency,

dual MOSFET drivers specifically designed to drive two power

N-Channel MOSFETs in a synchronous rectified buck converter

topology. These drivers combined with a HIP63xx or the ISL65xx

series of Multi-Phase Buck PWM controllers and MOSFETs form

a complete core-voltage regulator solution for advanced

microprocessors.

The HIP6601B drives the lower gate in a synchronous rectifier to

12V, while the upper gate can be independently driven over a range

from 5V to 12V. The HIP6603B drives both upper and lower gates

over a range of 5V to 12V. This drive-voltage flexibility provides

the advantage of optimizing applications involving trade-offs

between switching losses and conduction losses. The HIP6604B

can be configured as either a HIP6601B or a HIP6603B.

The output drivers in the HIP6601B, HIP6603B and HIP6604B

have the capacity to efficiently switch power MOSFETs at

frequencies up to 2MHz. Each driver is capable of driving a

3000pF load with a 30ns propagation delay and 50ns transition

time. These products implement bootstrapping on the upper gate

with only an external capacitor required. This reduces

implementation complexity and allows the use of higher

performance, cost effective, N-Channel MOSFETs. Adaptive

shoot-through protection is integrated to prevent both MOSFETs

from conducting simultaneously.

Features

• Drives Two N-Channel MOSFETs

• Adaptive Shoot-Through Protection

• Internal Bootstrap Device

• Supports High Switching Frequency

- Fast Output Rise Time

- Propagation Delay 30ns

• Small 8 Ld SOIC and EPSOIC and 16 Ld QFN Packages

• Dual Gate-Drive Voltages for Optimal Efficiency

• Three-State Input for Output Stage Shutdown

• Supply Undervoltage Protection

• QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat No

Leads—Product Outline.

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile.

• Pb-Free (RoHS Compliant)

Applications

• Core Voltage Supplies for Intel Pentium® III, AMD® Athlon™

Microprocessors

• High Frequency Low Profile DC/DC Converters

• High Current Low Voltage DC/DC Converters

Related Literature

• Technical Brief

TB363,

Guidelines for Handling and

Processing Moisture Sensitive Surface Mount Devices (SMDs)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774

Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

HIP6603BCBZ相似产品对比

	HIP6603BCBZ	HIP6601BCBZA	HIP6603BECBZ
描述	0.73 A HALF BRDG BASED MOSFET DRIVER, PDSO8	0.73 A HALF BRDG BASED MOSFET DRIVER, PDSO8	0.73 A HALF BRDG BASED MOSFET DRIVER, PDSO8
功能数量	1	1	1
端子数量	8	8	8
最大工作温度	85 Cel	85 Cel	85 Cel
最小工作温度	0.0 Cel	0.0 Cel	0.0 Cel
最大供电电压1	13.2 V	13.2 V	13.2 V
最小供电电压1	10.8 V	10.8 V	10.8 V
额定供电电压1	12 V	12 V	12 V
加工封装描述	GREEN, PLASTIC, MS-012AA, SOIC-8	GREEN, PLASTIC, MS-012AA, SOIC-8	GREEN, PLASTIC, MS-012AA, SOIC-8
无铅	Yes	Yes	Yes
欧盟RoHS规范	Yes	Yes	Yes
状态	ACTIVE	ACTIVE	ACTIVE
包装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
包装尺寸	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
表面贴装	Yes	Yes	Yes
端子形式	GULL WING	GULL WING	GULL WING
端子间距	1.27 mm	1.27 mm	1.27 mm
端子涂层	MATTE TIN	MATTE TIN	MATTE TIN
端子位置	DUAL	DUAL	DUAL
包装材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
温度等级	OTHER	OTHER	OTHER
最大供电电压2	12 V	12 V	12 V
最小供电电压2	5 V	5 V	5 V
高端驱动器	Yes	Yes	Yes
接口类型	HALF BRDG BASED MOSFET DRIVER	HALF BRDG BASED MOSFET DRIVER	HALF BRDG BASED MOSFET DRIVER
额定输出峰值电流限制	0.7300 A	0.7300 A	0.7300 A

HIP6603BCBZ

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HIP6603BCBZ概述

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