PESD5V0S1USF
Unidirectional ESD protection diode
Rev. 1 — 16 July 2012
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one
signal line from the damage caused by ESD and other transients. The device is
encapsulated in a leadless super small DSN0603-2 (SOD962) Surface-Mounted
Device (SMD) package.
1.2 Features and benefits
ESD protection of one line
Super small SMD package
Ultra low leakage current I
RM
< 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61643-321 (surge); I
PPM
= 3.5 A
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Communication systems
Portable electronics
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified.
Symbol
V
RWM
C
d
Parameter
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
Conditions
Min
-
-
Typ
-
35
Max
5
42
Unit
V
pF
NXP Semiconductors
PESD5V0S1USF
Unidirectional ESD protection diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
1
2
006aaa152
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0S1USF
DSN0603-2
Description
leadless ultra small package; 2 terminals;
body 0.6
0.3
0.3 mm
Version
SOD962
Type number
4. Marking
Table 4.
Marking codes
Marking code
1
Type number
PESD5V0S1USF
PESD5V0S1USF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 16 July 2012
2 of 13
NXP Semiconductors
PESD5V0S1USF
Unidirectional ESD protection diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PPM
I
PPM
T
j
T
amb
T
stg
[1]
[2]
Parameter
rated peak pulse power
rated peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
s
t
p
= 8/20
s
[1]
[1]
Min
-
-
-
55
65
Max
35
3.5
150
+150
+150
Unit
W
A
C
C
C
Device stressed with 8/20
s
exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
Measured from pin 1 to pin 2.
Table 6.
ESD maximum ratings
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
V
ESD
electrostatic
discharge voltage
Conditions
IEC 61000-4-2 (contact discharge)
IEC 61000-4-2 (air discharge)
machine model
MIL-STD-883 (human body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to pin 2.
[1][2]
[1][2]
[2]
Min
-
-
-
-
Max
30
30
400
10
Unit
kV
kV
V
kV
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
PESD5V0S1USF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 16 July 2012
3 of 13
NXP Semiconductors
PESD5V0S1USF
Unidirectional ESD protection diode
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
s
pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
V
RWM
I
RM
V
BR
C
d
V
CL
r
dyn
[1]
[2]
[3]
Conditions
Min
-
-
6
-
[1][2]
[1][2]
[3]
Typ
-
1
7
35
-
-
0.7
Max
5
100
8
42
9
11
-
Unit
V
nA
V
pF
V
V
reverse standoff
voltage
reverse leakage current V
RWM
= 5 V
breakdown voltage
diode capacitance
clamping voltage
dynamic resistance
I
R
= 1 mA
f = 1 MHz; V
R
= 0 V
I
PP
= 1 A
I
PPM
= 3.5 A
I
R
= 10 A
-
-
-
Device stressed with 8/20
s
exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
Measured from pin 1 to pin 2.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5-1-2008.
PESD5V0S1USF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 16 July 2012
4 of 13
NXP Semiconductors
PESD5V0S1USF
Unidirectional ESD protection diode
1.2
P
PPM
P
PPM(25°C)
0.8
006aab321
&
G
DDD
0.4
0
0
50
100
150
T
j
(°C)
200
9
5
f = 1 MHz; T
amb
= 25
C
Fig 3.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
I
−V
CL
−V
BR
−V
RWM
−I
RM
−I
R
−
P-N
V
+
−I
PP
−I
PPM
006aab324
Fig 5.
V-I characteristics for a unidirectional ESD protection diode
PESD5V0S1USF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 16 July 2012
5 of 13
NXP MCU
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