SO
T6
PESD5V0F5UV
Femtofarad unidirectional fivefold ESD protection array
Rev. 1 — 17 July 2012
Product data sheet
1. Product profile
1.1 General description
Femtofarad capacitance unidirectional ElectroStatic Discharge (ESD) protection diode
array designed to protect up to five signal lines from the damage caused by ESD and
other transients. The device is encapsulated in an ultra small and flat lead SOT666
Surface-Mounted Device (SMD) plastic package.
The combination of extremely low capacitance, high ESD maximum rating and ultra small
package makes the device ideal for high-speed data line protection and antenna
protection applications.
66
1.2 Features and benefits
ESD protection of up to 5 lines
Low diode capacitance C
d
= 0.55 pF
Ultra low leakage current I
RM
< 1 nA
ESD protection up to 8 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PPM
= 2 A
AEC-Q101 qualified
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
10/100/1000 Mbit/s Ethernet
Communication systems
Portable electronics
SIM card protection
High-speed data lines
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified.
Symbol
V
RWM
C
d
Parameter
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
Conditions
Min
-
-
Typ
-
0.55
Max
5
0.7
Unit
V
pF
NXP Semiconductors
PESD5V0F5UV
Femtofarad unidirectional fivefold ESD protection array
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
cathode
common anode
cathode
cathode
cathode
cathode
1
2
3
6
5
4
1
2
3
006aaa159
Simplified outline
Graphic symbol
6
5
4
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0F5UV -
Description
plastic surface-mounted package; 6 leads
Version
SOT666
Type number
4. Marking
Table 4.
Marking codes
Marking code
AH
Type number
PESD5V0F5UV
PESD5V0F5UV
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 17 July 2012
2 of 13
NXP Semiconductors
PESD5V0F5UV
Femtofarad unidirectional fivefold ESD protection array
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
PPM
T
j
T
amb
T
stg
[1]
[2]
Parameter
rated peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
s
[1][2]
Min
-
-
55
65
Max
2
150
+150
+150
Unit
A
C
C
C
Device stressed with 8/20
s
exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Table 6.
ESD maximum ratings
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
V
ESD
electrostatic
discharge voltage
Conditions
IEC 61000-4-2 (contact discharge)
IEC 61000-4-2 (air discharge)
machine model
MIL-STD-883 (human body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1, 3, 4, 5 or 6 to pin 2.
[1][2]
[1][2]
[2]
Min
-
-
-
-
Max
8
8
400
10
Unit
kV
kV
V
kV
Table 7.
Standard
ESD standards compliance
Conditions
> 8 kV (contact)
> 8 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
PESD5V0F5UV
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 17 July 2012
3 of 13
NXP Semiconductors
PESD5V0F5UV
Femtofarad unidirectional fivefold ESD protection array
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
s
pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
V
RWM
I
RM
V
BR
C
d
V
CL
r
dyn
[1]
[2]
[3]
Conditions
Min
-
-
7.5
-
[1][2]
[1][2]
[3]
Typ
-
<1
8.8
0.55
-
-
1.1
Max
5
10
10
0.7
13
15
-
Unit
V
nA
V
pF
V
V
reverse standoff
voltage
reverse leakage current V
RWM
= 5 V
breakdown voltage
diode capacitance
clamping voltage
dynamic resistance
I
R
= 10 mA
f = 1 MHz; V
R
= 0 V
I
PP
= 1 A
I
PPM
= 2 A
I
R
= 10 A
-
-
-
Device stressed with 8/20
s
exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5-1-2008.
PESD5V0F5UV
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 17 July 2012
4 of 13
NXP Semiconductors
PESD5V0F5UV
Femtofarad unidirectional fivefold ESD protection array
&
G
DDD
6
DDD
9
5
T
amb
= 25
C
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
Crosstalk; typical values
I
−V
CL
−V
BR
−V
RWM
−I
RM
−I
R
−
P-N
V
+
−I
PP
−I
PPM
006aab324
Fig 5.
V-I characteristics for a unidirectional ESD protection diode
PESD5V0F5UV
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 17 July 2012
5 of 13
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