66228
09/22/2010
3C91C TYPE PROTON RADIATION TOLERANT OPTOCOU
PLER
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
•
•
•
•
•
High Reliability
Base lead eliminated for improved noise immunity
Rugged package
Stability over wide temperature
+500 V electrical isolation
Applications:
•
•
•
•
•
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
DESCRIPTION
The
66228
optocoupler consists of an 850 nm GaAlAs LED optically coupled to a silicon planar phototransistor. This LED
has proven to be highly tolerant to proton radiation and to be more tolerant of operating temperatures over 100°C than the
more commonly used 660 nm LED. The optocoupler is built on a TO-72 header. The anode of the LED is electrically
connected to the case. The internal base connection has been eliminated for improved noise immunity.
ABSOLUTE MAXIMUM RATINGS
Emitter-Collector Voltage ....................................................................................................................................................... 7 V
Collector-Emitter Voltage ................................................................................................................................................... 60 V
Reverse Input Voltage .......................................................................................................................................................... 7 V
Input Diode Continuous Forward Current (Note 1) ......................................................................................................... 50 mA
Peak Forward Input Current (value applies for tw
<
1
µ
s, PRR
<
300 pps) .....................................................................500 mA
Continuous Collector Current ........................................................................................................................................... 50 mA
Continuous Transistor Power Dissipation (Note 2) ....................................................................................................... 230 mW
Input to Output Isolation Voltage ..................................................................................................................................... 1000 V
Storage Temperature ........................................................................................................................................ -65°C to +150°C
Operating Free-Air Temperature Range .......................................................................................................... -55°C to +125°C
Lead Solder Temperature (10 seconds, 1/16” from case) .............................................................................................. 260°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.5 mA/
°
C.
2. Derate linearly to 125°C free-air temperature at the rate of 2.3 mW/
°
C.
Package Dimensions
4 LEADS
0.019 [0.48]
0.016 [0.41]
0.230 [5.84]
0.209 [5.31]
EMITTER
Ø0.100 [2.54]
2
1
COLLECTOR
0.210 [5.34]
0.170 [4.32]
0.500 [12.70]
MIN
CATHODE
45°
0.046 [1.17]
0.036 [0.91]
ANODE
3
4
0.048 [1.22]
0.028 [0.71]
Schematic Diagram
A 4
2 C
0.195 [4.95]
0.178 [4.52]
K 1
ANODE ELECTRICALLY CONNECTED TO CASE.
3 E
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E.Walnut St., Garland, TX 75040
•
(972)272-3571
•
Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
66228
09/22/2010
3C91C TYPE PROTON RADIATION TOLERANT OPTOCOU
PLER
ELECTRICAL CHARACTERISTICS
T
A
= 25°C unless otherwise specified.
PARAMETER
Input Diode Static Reverse Current
Input Diode Static Forward Voltage
Input Diode Static Forward Voltage
Reverse Breakdown Voltage
Input Diode Capacitance
SYMBOL
I
R
V
F
V
F
B
VR
C
IN
MIN
TYP
MAX
1
UNITS
µA
V
V
V
pF
TEST CONDITIONS
V
R
= 3 V
I
F
= 2 mA
I
F
= 50 mA
I
R
= 8
µ
A
V = 0 V, f = 1 MHz
1.15
1.5
6
12
25
1.2
1.8
OUTPUT TRANSISTOR
T
A
= 25°C unless otherwise specified.
PARAMETER
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
SYMBOL
V
(BR)CEO
V
(BR)ECO
I
CEO1
I
CEO2
MIN
50
7
TYP
MAX
UNITS
V
V
TEST CONDITIONS
I
C
= 1 mA, I
B
= 0, I
F
= 0
I
C
= 10
µA,
I
E
= 10
µ
A, I
F
= 0
V
CE
= 50 V, I
F
= 0 mA
V
CE
= 5 V, I
F
= 0 mA
50
10
nA
nA
COUPLED CHARACTERISTICS
T
A
= 25°C unless otherwise specified.
PARAMETER
On State Collector Current
On State Collector Current
On State Collector Current
Collector-Emitter Saturation Voltage
Isolation Resistance
Input to Output Capacitance
Delay Time
Storage Time
Rise Time
Fall Time
-55
°
C
SYMBOL
I
C(ON)
I
C(ON)
I
C(ON)
V
CE(SAT)
R
ISO
C
IO
t
d
t
s
t
r
t
f
MIN
4
3
2
TYP
MAX
UNITS
mA
TEST CONDITIONS
V
CE
= 5 V, I
F
= 10 mA
V
CE
= 0.4 V, I
F
= 10 mA
V
CE
= 5 V, I
F
= 10 mA
I
F
= 50 mA, I
C
= 10 mA
V
IN-OUT
= 1000 V
f = 1 MHz
V
CE
= 5 V, I
F
= 2 mA, R
L
= 100
Ω
V
CE
= 5 V, I
F
= 2 mA, R
L
= 100
Ω
V
CE
= 5 V, I
F
= 2 mA, R
L
= 100
Ω
V
CE
= 5 V, I
F
= 2 mA, R
L
= 100
Ω
20
mA
mA
0.4
10
9
V
Ω
2
2
0.2
3
4
2.5
4
0.5
5
5
pF
µ
s
µ
s
µ
s
µ
s
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
Input Current, Low Level
Input Current, High Level
Supply Voltage
Operating Temperature
SYMBOL
I
FL
I
FH
V
CE
T
A
MIN
0
2
5
-55
MAX
1
10
50
125
UNITS
µ
A
mA
V
°
C
SELECTION GUIDE
PART NUMBER
66228-001
66228-101
PART DESCRIPTION
Commercial
Screened
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E.Walnut St., Garland, TX 75040
•
(972)272-3571
•
Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
京公网安备 11010802033920号
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