Automotive N-and P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
N-CHANNEL
V
DS
(V)
R
DS(on)
(Ω) at V
GS
= ± 10 V
R
DS(on)
(Ω) at V
GS
= ± 4.5 V
I
D
(A)
Configuration
Package
30
0.031
0.042
7.3
SO-8
P-CHANNEL
-30
0.070
0.190
-5.3
N- and P-Pair
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
c
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SO-8
Dual
D
1
7
D
2
6
D
2
5
D
1
S
2
D
1
8
G
2
G
1
Top View
2
1
G
1
S
1
4
3
G
2
S
2
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
Marking Code:
Q4532A
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
7.3
4.2
4.2
29
10
5
3.3
1.1
-55 to +175
N-CHANNEL
30
± 20
-5.3
-3
-3
-21
-9
4
3.3
1.1
mJ
W
°C
A
P-CHANNEL
-30
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
PCB Mount
b
SYMBOL
R
thJA
R
thJF
N-CHANNEL
110
45
P-CHANNEL
105
45
UNIT
°C/W
S15-1926-Rev. A, 17-Aug-15
Document Number: 62981
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4532AEY
www.vishay.com
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0, I
D
= 250 μA
V
GS
= 0, I
D
= -250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
On-State Drain Current
a
I
D(on)
V
GS
= 10 V
V
GS
= -10 V
V
GS
= 10 V
V
GS
= -10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V
V
GS
= 10 V
V
GS
= -10 V
V
GS
= 4.5 V
V
GS
= -4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= -10 V
V
GS
= 10 V
V
GS
= -10 V
V
GS
= 10 V
V
GS
= -10 V
V
DS
= 15 V, f = 1 MHz
V
DS
= -15 V, f = 1 MHz
V
DS
= 15 V, f = 1 MHz
V
DS
= -15 V, f = 1 MHz
V
DS
= 15 V, f = 1 MHz
V
DS
= -15 V, f = 1 MHz
V
DS
= 15 V, I
D
= 3.9 A
V
DS
= -15 V, I
D
= -2.5 A
V
DS
= 15 V, I
D
= 3.9 A
V
DS
= -15 V, I
D
= -2.5 A
V
DS
= 15 V, I
D
= 3.9 A
V
DS
= -15 V, I
D
= -2.5 A
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
-
-
-
-
-
-
-
-
-
-
-
-
1.7
2.8
357
352
82
95
36
59
5.9
7.9
1
1.1
1.9
2.7
3.4
5.8
535
528
123
142
53
88
7.8
10.2
-
-
-
-
5.1
8.6
Ω
nC
pF
g
fs
V
DS
= 30 V
V
DS
= -30 V
V
DS
= 30 V, T
J
= 125 °C
V
DS
= -30 V, T
J
= 125 °C
V
DS
= 30 V, T
J
= 175 °C
V
DS
= -30 V, T
J
= 175 °C
V
DS
= 5 V
V
DS
= -5 V
I
D
= 4.9 A
I
D
= -3.5 A
I
D
= 4.9 A, T
J
= 125 °C
I
D
= -3.5 A, T
J
= 125 °C
I
D
= 4.9 A, T
J
= 175 °C
I
D
= -3.5 A, T
J
= 175 °C
I
D
= 4.1 A
I
D
= -2.5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
-30
1.5
-1.5
-
-
-
-
-
-
-
-
15
-15
-
-
-
-
-
-
-
-
-
-
-
-
2
-2
-
-
-
-
-
-
-
-
-
-
0.021
0.056
-
-
-
-
0.033
0.157
22
5.5
-
-
2.5
-2.5
± 100
± 100
1
-1
50
-50
150
-150
-
-
0.031
0.070
0.064
0.100
0.082
0.117
0.042
0.190
-
-
S
Ω
A
μA
nA
V
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Vishay Siliconix
Gate-Source Threshold Voltage
V
GS(th)
Gate-Source Leakage
I
GSS
V
DS
= 15 V, I
D
= 4.9 A
V
DS
= -15 V, I
D
= -3.5 A
Output Capacitance
C
oss
Reverse Transfer Capacitance
C
rss
Total Gate Charge
Q
g
Gate-Source Charge
Q
gs
Gate-Drain Charge
c
Q
gd
Gate Resistance
R
g
S15-1926-Rev. A, 17-Aug-15
Document Number: 62981
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4532AEY
www.vishay.com
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= -15 V, R
L
= 15
Ω
I
D
≅
-1 A, V
GEN
= -10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= -15 V, R
L
= 15
Ω
I
D
≅
-1 A, V
GEN
= -10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= -15 V, R
L
= 15
Ω
I
D
≅
-1 A, V
GEN
= -10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= -15 V, R
L
= 15
Ω
I
D
≅
-1 A, V
GEN
= -10 V, R
g
= 1
Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
MIN.
-
-
-
-
-
-
-
-
TYP.
7
6
17
17
10
19
19
16
MAX.
10
9
21
21
ns
14
24
24
20
UNIT
Vishay Siliconix
Turn-On Delay Time
t
d(on)
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Fall Time
t
f
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
I
S
= 2 A
I
S
= -1.5 A
N-Ch
P-Ch
N-Ch
P-Ch
-
-
-
-
-
-
0.8
-0.8
29
-21
1.2
-1.2
A
Forward Voltage
V
SD
V
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1926-Rev. A, 17-Aug-15
Document Number: 62981
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4532AEY
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
20
V
GS
= 10 V thru 4 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
20
Vishay Siliconix
12
V
GS
= 3 V
8
12
T
C
= 25
°C
8
4
V
GS
= 2 V
0
0.0
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain-to-Source Voltage (V)
4
T
C
= 125
°C
T
C
= - 55
°C
0
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Output Characteristics
0.10
500
Transfer Characteristics
0.08
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
400
C
iss
0.06
300
0.04
V
GS
= 4.5 V
200
C
oss
100
0.02
V
GS
= 10V
0.00
0
4
8
12
16
20
I
D
- Drain Current (A)
C
rss
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 3.9 A
V
DS
= 15 V
V
GS
-
Gate-to-Source
Voltage (V)
8
2.0
I
D
= 4.9 A
1.7
Capacitance
V
GS
=10 V
1.4
6
4
1.1
V
GS
= 4.5 V
0.8
2
0
0
1
2
3
4
5
6
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
S15-1926-Rev. A, 17-Aug-15
On-Resistance vs. Junction Temperature
Document Number: 62981
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4532AEY
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
5
0.5
Vishay Siliconix
4
I
D
- Drain Current (A)
V
GS(th)
Variance (V)
0.1
I
D
= 5 mA
- 0.3
3
T
C
= 25
°C
2
T
C
= 125
°C
T
C
= - 55
°C
0
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
- 0.7
I
D
= 250 μA
1
- 1.1
- 1.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
Transfer Characteristics
10
0.25
Threshold Voltage
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
1
T
J
= 150
°C
0.20
0.15
0.1
T
J
= 25
°C
0.10
T
J
= 150
°C
0.05
T
J
= 25
°C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.00
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
30
T
C
= - 55
°C
V
DS
- Drain-to-Source Voltage (V)
24
g
fs
- Transconductance (S)
T
C
= 25
°C
18
T
C
= 125
°C
40
50
On-Resistance vs. Gate-to-Source Voltage
I
D
= 1 mA
30
12
20
6
10
0
0
1
2
3
I
D
- Drain Current (A)
4
5
0
-50
-25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Transconductance
S15-1926-Rev. A, 17-Aug-15
Drain Source Breakdown vs. Junction Temperature
Document Number: 62981
5
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
下面是BLE Wireless UART例子程序ApplMain.c中main_task最后调用的函数。其中处理了两类事件：gAppEvtMsgFromHostStack_c（the host to app message）和 gAppEvtAppCallback_c（ the callback m ......
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
