THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ3481EV
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= - 1.7 A, V
GS
= 0 V
V
DD
= - 15 V, R
L
= 15
I
D
- 1 A, V
GEN
= - 10 V, R
g
= 1
f = 1 MHz
V
GS
= - 10 V
V
DS
= - 15 V, I
D
= - 5.3 A
V
GS
= 0 V
V
DS
= - 15 V, f = 1 MHz
-
-
-
-
-
-
4.5
-
-
-
-
-
-
695
160
120
15.4
2.1
3.9
11.5
9
15
28
12
-
- 0.8
18.5
14
23
42
18
- 30
- 1.2
A
V
ns
870
200
150
23.5
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 μA
V
DS
= V
GS
, I
D
= - 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= - 10 V
V
GS
= - 10 V
V
GS
= - 4.5 V
V
DS
= - 30 V
V
DS
= - 30 V, T
J
= 125 °C
V
DS
= - 30 V, T
J
= 175 °C
V
DS
-
5 V
I
D
= - 5.3 A
I
D
= - 2 A
- 30
- 1.5
-
-
-
-
- 10
-
-
-
-
- 2.0
-
-
-
-
-
0.035
0.055
13
-
- 2.5
± 100
-1
- 50
- 150
-
0.043
0.070
-
A
S
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= - 15 V, I
D
= - 5.3 A
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2124-Rev. B, 07-Nov-11
2
Document Number: 71508
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ3481EV
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
20
V
GS
= 10 V thru 5 V
Vishay Siliconix
20
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
12
V
GS
= 4 V
12
8
8
T
C
= 25 °C
4
V
GS
= 3 V
4
T
C
= 125 °C
T
C
= - 55 °C
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
20
T
C
= 25 °C
Transfer Characteristics
0.20
16
T
C
= - 55 °C
R
DS(on)
- On-Resistance (Ω)
g
fs
- Transconductance (S)
0.16
12
T
C
= 125 °C
0.12
V
GS
= 4.5 V
8
0.08
V
GS
= 10 V
4
0.04
0
0
2
4
6
8
10
0
0
4
8
12
16
20
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
1200
10
On-Resistance vs. Drain Current
V
DS
= 15 V
I
D
= 5.3 A
V
GS
-
Gate-to-Source
Voltage (V)
1000
C - Capacitance (pF)
8
800
C
iss
6
600
4
400
C
oss
200
C
rss
2
0
0
5
10
15
20
25
30
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total
Gate
Charge (nC)
Capacitance
Gate Charge
S11-2124-Rev. B, 07-Nov-11
3
Document Number: 71508
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ3481EV
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
I
D
= 5.3 A
Vishay Siliconix
100
1.7
R
DS(on)
- On-Resistance
(Normalized)
I
S
-
Source
Current (A)
V
GS
= 10 V
10
T
J
= 150 °C
1.4
V
GS
= 4.5 V
1
1.1
0.1
T
J
= 25 °C
0.8
0.01
0.5
- 50
- 25
0
25
50
75
100
125
150
175
0.001
0.0
0.3
0.6
0.9
1.2
1.5
T
J
- Junction Temperature (°C)
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
0.25
1.0
Source-Drain Diode Forward Voltage
0.20
R
DS(on)
- On-Resistance (Ω)
V
GS(th)
Variance (V)
0.7
0.15
0.4
I
D
= 250 μA
I
D
= 5 mA
0.10
T
J
= 150 °C
0.1
0.05
T
J
= 25 °C
- 0.2
0.00
0
2
4
6
8
10
- 0.5
- 50
- 25
0
25
50
75
100
125
150
175
V
GS
-
Gate-to-Source
Voltage (V)
T
J
- Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
- 30
I
D
= 1 mA
V
DS
- Drain-to-Source Voltage (V)
Threshold Voltage
- 32
- 34
- 36
- 38
- 40
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-2124-Rev. B, 07-Nov-11
4
Document Number: 71508
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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