THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
PCB Mount
b
SYMBOL
R
thJA
R
thJF
LIMIT
166
50
UNIT
°C/W
SQ2318AES
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 5.4 A, V
GS
= 0 V
V
DD
= 20 V, R
L
= 20
I
D
1 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 20 V, I
D
= 3.9 A
V
GS
= 0 V
V
DS
= 20 V, f = 1 MHz
-
-
-
-
-
-
1.5
-
-
-
-
-
-
442
79
37
8.7
1.4
1.6
3.0
7.5
8.4
12
5.7
-
0.8
553
99
46
13
-
-
4.5
11
13
18
8.5
32
1.2
A
V
ns
nC
pF
g
fs
V
DS
= 40 V
V
DS
= 40 V, T
J
= 125 °C
V
DS
= 40 V, T
J
= 175 °C
V
DS
5
V
I
D
= 7.9 A
I
D
= 7.9 A, T
J
= 125 °C
I
D
= 7.9 A, T
J
= 175 °C
I
D
= 7.3 A
40
1.5
-
-
-
-
10
-
-
-
-
-
-
2.0
-
-
-
-
-
0.026
-
-
0.030
30
-
2.5
± 100
1
50
150
-
0.031
0.045
0.065
0.036
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 7.9 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2477-Rev. A, 09-Dec-13
Document Number: 62911
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ2318AES
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
20
Vishay Siliconix
20
V
GS
= 10 V thru 4 V
16
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
12
12
T
C
= 25
°C
8
8
4
V
GS
= 3 V
0
4
T
C
= 125
°C
T
C
= - 55
°C
0
1
2
3
V
DS
- Drain-to-Source Voltage (V)
4
5
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
Output Characteristics
5
30
Transfer Characteristics
T
C
= - 55
°C
4
24
3
T
C
= 25
°C
2
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
T
C
= 25
°C
18
T
C
= 125
°C
12
1
T
C
= 125
°C
T
C
= - 55
°C
6
0
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
0
0.0
1.2
2.4
3.6
4.8
6.0
I
D
- Drain Current (A)
Transfer Characteristics
Transconductance
0.075
800
0.060
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
640
0.045
V
GS
= 4.5 V
0.030
480
C
iss
320
0.015
V
GS
= 10 V
160
C
rss
0
5
10
C
oss
0.000
0
4
8
12
I
D
- Drain Current (A)
16
20
0
15
20
25
30
35
40
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
S13-2477-Rev. A, 09-Dec-13
Capacitance
Document Number: 62911
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ2318AES
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
Vishay Siliconix
2.0
R
DS(on)
- On-Resistance (Normalized)
I
D
= 3.9 A
1.7
V
GS
= 10 V
1.4
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 3.9 A
V
DS
= 20 V
6
4
1.1
V
GS
= 4.5 V
0.8
2
0
0
2
4
6
Q
g
- Total
Gate
Charge (nC)
8
10
0.5
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Gate Charge
100
0.15
On-Resistance vs. Junction Temperature
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
R
DS(on)
- On-Resistance (Ω)
0.12
0.09
T
J
= 150
°C
0.06
0.1
T
J
= 25
°C
0.01
0.03
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0.00
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source Drain Diode Forward Voltage
0.5
51
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance (V)
V
DS
- Drain-to-Source Voltage (V)
49
I
D
= 1 mA
- 0.1
I
D
= 5 mA
47
- 0.4
I
D
= 250 μA
- 0.7
45
43
- 1.0
- 50 - 25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
175
41
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Threshold Voltage
S13-2477-Rev. A, 09-Dec-13
Drain Source Breakdown vs. Junction Temperature
Document Number: 62911
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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