Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω) at V
GS
= 10 V
R
DS(on)
(Ω) at V
GS
= 4.5 V
I
D
(A) per leg
Configuration
D
2
5
FEATURES
60
0.040
0.055
7
Dual
•
•
•
•
TrenchFET
®
power MOSFET
100 % R
g
and UIS tested
AEC-Q101 qualified
Material categorization:
for definitions of compliance please
see
www.vishay.com/doc?99912
D
1
D
2
SO-8
Dual
D
1
8
D
1
7
D
2
6
G
1
4
3
G
2
S
2
G
2
Top View
2
1
G
1
S
1
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4946AEY-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
SYMBOL
V
DS
V
GS
T
C
= 25 °C
T
C
= 125 °C
I
D
I
S
I
DM
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
60
± 20
7
4
3.6
28
18
16.2
4
1.3
-55 to +175
UNIT
V
A
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
c. When mounted on 1" square PCB (FR4 material).
PCB Mount
c
SYMBOL
R
thJA
R
thJF
LIMIT
110
34
UNIT
°C/W
S15-1462-Rev. F, 15-Jun-15
Document Number: 71506
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4946AEY
www.vishay.com
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
f
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 6.8
Ω
I
D
≅
4.4 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
GS
= 10 V
V
DS
= 30 V, I
D
= 5.3 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
1.3
-
-
-
-
600
110
50
11.7
1.8
2.8
-
7
3.3
22.4
2.1
750
140
62
18
2.7
4.2
6
11
5
33.5
3.2
ns
Ω
nC
pF
g
fs
V
DS
= 60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
≥
5 V
I
D
= 4.5 A
I
D
= 4.5 A, T
J
= 125 °C
I
D
= 4.5 A, T
J
= 175 °C
I
D
= 4 A
60
1.5
-
-
-
-
20
-
-
-
-
-
-
2.0
-
-
-
-
-
0.033
-
-
0.045
15
-
2.5
± 100
1
50
150
-
0.040
0.066
0.081
0.055
-
S
Ω
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Vishay Siliconix
V
DS
= 15 V, I
D
= 4.5 A
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
Forward Voltage
I
SM
V
SD
I
F
= 2 A, V
GS
= 0 V
-
-
-
0.75
28
1.1
A
V
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1462-Rev. F, 15-Jun-15
Document Number: 71506
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4946AEY
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
30
V
GS
= 10 V thru 5 V
24
I
D
- Drain Current (A)
Vishay Siliconix
30
V
GS
= 4 V
I
D
- Drain Current (A)
24
18
18
12
12
T
C
= 25 °C
6
T
C
= 125 °C
6
V
GS
= 3 V
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
0
0
T
C
= - 55 °C
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
Output Characteristics
Transfer Characteristics
25
T
C
= -55 °C
g
fs
- Transconductance (S)
R
DS(on)
- On-Resistance (Ω)
0.10
20
T
C
= 25 °C
15
0.08
0.06
V
GS
= 4.5 V
0.04
V
GS
= 10 V
10
T
C
= 125 °C
5
0.02
0
0
3
6
9
I
D
- Drain Current (A)
12
15
0
0
6
12
18
I
D
- Drain Current (A)
24
30
Transconductance
On-Resistance vs. Drain Current
1000
10
I
D
= 5.3 A
800
C - Capacitance (pF)
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 30 V
6
C
iss
600
400
4
200
C
rss
0
10
C
oss
2
0
0
20
30
40
50
V
DS
- Drain-to-Source Voltage (V)
60
0
2
4
6
8
Q
g
- Total
Gate
Charge (nC)
10
12
Capacitance
S15-1462-Rev. F, 15-Jun-15
Gate Charge
Document Number: 71506
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4946AEY
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
R
DS(on)
- On-Resistance (Normalized)
Vishay Siliconix
75
1.7
V
DS
- Drain-to-Source Voltage (V)
I
D
= 5.3 A
V
GS
= 10 V
I
D
= 1 mA
72
1.4
V
GS
= 4.5 V
69
1.1
66
0.8
63
0.5
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
60
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
On-Resistance vs. Junction Temperature
100
Drain Source Breakdown vs. Junction Temperature
0.25
T
J
= 150 °C
1
T
J
= 25 °C
0.1
R
DS(on)
- On-Resistance (Ω)
10
I
S
-
Source
Current (A)
0.20
0.15
0.10
T
J
= 150 °C
0.05
T
J
= 25 °C
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.3
V
GS(th)
Variance (V)
0
-0.3
I
D
= 5 mA
-0.6
I
D
= 250 μA
-0.9
-1.2
-50
-25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
175
Threshold Voltage
S15-1462-Rev. F, 15-Jun-15
Document Number: 71506
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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