CBA
www.vishay.com
Vishay Electro-Films
Thin Film Binary MOS Capacitors
FEATURES
• Wire bondable
• User value selection
• Four capacitors with common connection
• Capacitance range: 0.25 pF to 15 pF in binary
increments
Product may not be to scale
• Dielectric: Silicon dioxide
• Chip size: 0.019" x 0.030"
• Substrate: Silicon with gold backing
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
The CBA MOS capacitor chips each contain four different
capacitors in binary increments allowing the user many
choices in value selection. Two versions of CBA capacitors
are available: one with a total capacitance of 3.75 pF and
one with a total capacitance of 15 pF.
These chips are manufactured using Vishay Electro-Films
(EFI) sophisticated Thin Film equipment and manufacturing
technology. The CBAs are 100 % electrically tested and
visually inspected to MIL-STD-883.
APPLICATIONS
Vishay EFI CBA binary MOS multi-value capacitor chips are
designed for hybrid packages in which microwave circuits
are to be trimmed. This is done on the CBA chips by
selecting the bonding pad for the required capacitance and
wire-bonding by conventional techniques.
WV (DC) VALUES AND TOLERANCES
CAPACITOR MODEL
Case Size
Total Capacitance
Capacitance Values
Tolerance
DC Working Voltage
CBA 3.75 pF
0203
3.75
0.25, 0.50, 1.0, 2.0
± 25
100
CBA 15 pF
0203
15
1.0, 2.0, 4.0, 8.0
± 10
30
pF
pF
%
V
UNIT
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
Capacitance Range
Maximum Working Voltage
Peak Voltage at + 25 °C
Dissipation Factor, 1 kHz, 1 V
RMS
, + 25 °C
Q at 1 mHz, 50 mV
RMS
, + 25 °C
TCC, - 55 °C to + 150 °C
Insulation Resistance at Working Voltage, + 25 °C
Operating Temperature Range
Thermal Shock
Moisture Resistance, MIL-STD-202, Method 106
Short Time Overload, + 25 °C, 5 s; 1.5 x Working Voltage
High Temperature Exposure: 100 h at + 150 °C Ambient
Life, MIL-STD-202, Method 108,
Condition D, + 125 °C Ambient, 1000 h at Working Voltage
VALUE
0.25 to 15
100
1.5 x working voltage
0.1 max. MOS
1000 min.
+ 15 ± 25
10
9
min.
- 55 to + 150
± 0.25 + 0.25 pF max.
C/C
± 1.0 + 0.25 pF max.
C/C
± 0.25 + 0.25 pF max.
C/C
± 0.25 + 0.25 pF max.
± 2.0 + 0.25 pF max.
C/C
ppm/°C
°C
%
%
%
%
%
%
UNIT
pF
V
Revision: 02-May-13
Document Number: 61041
1
For technical questions, contact:
efi@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CBA
www.vishay.com
CONFIGURATIONS
in inches
0.004 0.004 0.004
0.008
Vishay Electro-Films
0.019
0.00375
0.015
0.0075
0.030
SCHEMATIC
TOP BONDING PADS
TOP BONDING PADS
0.25 pF 0.5 pF
1.0 pF 2.0 pF
1.0 pF
2.0 pF 4.0 pF 8.0 pF
Back of chip
Back of chip
MECHANICAL SPECIFICATIONS
PARAMETER
Chip Size
Chip Thickness
Chip Substrate Material
Dielectric
Bonding Pads
Backing
VALUE
0.019" x 0.030" ± 0.002" (0.48 mm x 0.75 mm ± 0.05 mm)
0.010" ± 0.003" (0.25 mm ± 0.08 mm)
Semiconductor silicon
Silicon dioxide (MOS)
10 kÅ minimum aluminum
3 kÅ minimum gold
GLOBAL PART NUMBER INFORMATION
Global Part Number: CBA3750CMAHWS
Global Part Number Description: CBA 3.75 pF 20 % Al H WS
C
B
A
3
7
5
0
C
M
A
H
W
S
MODEL
CBA
CAPACITANCE
(pF)
First 4 digits
are significant
figures of
capacitance
CAPACITANCE
MULTIPLIER
CODE
C
= 0.001
B
= 0.01
TOLERANCE
CODE
K
= 10 %
M
= 20 %
L
= 25 %
TERMINATION
G
= Au
A
= Al
VISUAL
CLASS
H
= Class H
K
= Class K
PACKAGING
CODE
WS
= Waffle pack
100 min., 1 mult
Revision: 02-May-13
Document Number: 61041
2
For technical questions, contact:
efi@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 02-Oct-12
1
Document Number: 91000