THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM50N04-4m0L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 50 A, V
GS
= 0 V
V
DD
= 20 V, R
L
= 0.4
I
D
50 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 20 V, I
D
= 50 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
1
-
-
-
-
-
-
4880
560
250
85
14
14
2.15
9
11
39
11
-
0.9
6100
700
315
130
-
-
3.3
14
17
59
17
200
1.5
A
V
ns
nC
pF
g
fs
V
DS
= 40 V
V
DS
= 40 V, T
J
= 125 °C
V
DS
= 40 V, T
J
= 175 °C
V
DS
5
V
I
D
= 20 A
I
D
= 20 A, T
J
= 125 °C
I
D
= 20 A, T
J
= 175 °C
I
D
= 20 A
40
1.5
-
-
-
-
50
-
-
-
-
-
-
2.0
-
-
-
-
-
0.0025
-
-
0.0030
110
-
2.5
± 100
1
50
150
-
0.0040
0.0067
0.0082
0.0055
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 15 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1847-Rev. B, 30-Jul-12
Document Number: 66800
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM50N04-4m0L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 4 V
I
D
- Drain Current (A)
Vishay Siliconix
100
80
I
D
- Drain Current (A)
80
60
60
40
40
T
C
= 25 °C
20
20
V
GS
= 3 V
0
0
3
6
9
12
15
V
DS
- Drain-to-Source Voltage (V)
T
C
= 125 °C
0
0
1
2
3
T
C
= - 55 °C
4
5
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
300
Transfer Characteristics
0.010
g
fs
- Transconductance (S)
T
C
= - 55 °C
180
R
DS(on)
- On-Resistance (Ω)
240
0.008
T
C
= 25 °C
T
C
= 125 °C
0.006
V
GS
= 4.5 V
120
0.004
60
0.002
V
GS
= 10 V
0.000
0
16
32
48
I
D
- Drain Current (A)
64
80
0
0
20
40
60
I
D
- Drain Current (A)
80
100
Transconductance
7000
6000
C
iss
C - Capacitance (pF)
On-Resistance vs. Drain Current
10
I
D
= 50 A
V
GS
-
Gate-to-Source
Voltage (V)
8
5000
4000
3000
2000
C
oss
1000
C
rss
6
V
DS
= 20 V
4
2
0
0
10
20
30
40
V
DS
- Drain-to-Source Voltage (V)
0
0
10
20
30
40
50
60
70
80
90
Q
g
- Total
Gate
Charge (nC)
Capacitance
S12-1847-Rev. B, 30-Jul-12
Gate Charge
Document Number: 66800
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM50N04-4m0L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.3
I
D
= 20 A
R
DS(on)
- On-Resistance (Normalized)
Vishay Siliconix
52
I
D
= 10 mA
V
GS
= 10 V
V
DS
- Drain-to-Source Voltage (V)
2.0
50
1.7
V
GS
= 4.5 V
48
1.4
46
1.1
44
0.8
42
0.5
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
40
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
Drain Source Breakdown vs. Junction Temperature
0.030
10
T
J
= 150 °C
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
0.024
1
0.018
0.1
T
J
= 25 °C
0.012
T
J
= 150 °C
0.006
T
J
= 25 °C
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0
Source Drain Diode Forward Voltage
0.7
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance (V)
- 0.3
I
D
= 5 mA
- 0.8
I
D
= 250 μA
- 1.3
- 1.8
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
Threshold Voltage
S12-1847-Rev. B, 30-Jul-12
Document Number: 66800
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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