THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM50N04-4m1
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 50 A, V
GS
= 0 V
V
DD
= 20 V, R
L
= 0.4
I
D
50 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 20 V, I
D
= 50 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
0.9
-
-
-
-
-
-
5372
512
256
70
16
12.6
1.86
12
5
35
9
-
0.86
6715
640
320
105
-
-
2.8
18
8
53
14
200
1.5
A
V
ns
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
DS
= 40 V
V
DS
= 40 V, T
J
= 125 °C
V
DS
= 40 V, T
J
= 175 °C
V
DS
5
V
I
D
= 30 A
I
D
= 30 A, T
J
= 125 °C
I
D
= 30 A, T
J
= 175 °C
40
2.5
-
-
-
-
50
-
-
-
-
-
3.0
-
-
-
-
-
0.0030
-
-
200
-
3.5
± 100
1
50
250
-
0.0041
0.0068
0.0082
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 30 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-0568-Rev. A, 26-Mar-12
Document Number: 63770
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM50N04-4m1
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 5 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Vishay Siliconix
100
80
60
60
40
V
GS
= 4 V
20
40
T
C
= 25 °C
20
T
C
= 125 °C
T
C
= - 55 °C
0
0
3
6
9
12
15
V
DS
- Drain-to-Source Voltage (V)
0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
350
T
C
= - 55 °C
280
g
fs
- Transconductance (S)
0.010
T
C
= 25 °C
R
DS(on)
- On-Resistance (Ω)
0.008
210
T
C
= 125 °C
140
0.006
0.004
V
GS
= 10 V
0.002
70
0
0
14
28
42
56
70
I
D
- Drain Current (A)
0.000
0
20
40
60
I
D
- Drain Current (A)
80
100
Transconductance
On-Resistance vs. Drain Current
8000
10
I
D
= 50 A
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 20 V
6
6000
C - Capacitance (pF)
C
iss
4000
4
2000
C
oss
C
rss
0
0
10
20
30
V
DS
- Drain-to-Source Voltage (V)
40
2
0
0
10
20
30
40
50
60
70
80
90
Q
g
- Total
Gate
Charge (nC)
Capacitance
Gate Charge
S12-0568-Rev. A, 26-Mar-12
Document Number: 63770
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM50N04-4m1
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
R
DS(on)
- On-Resistance (Normalized)
Vishay Siliconix
100
I
D
= 20 A
V
GS
= 10 V
10
I
S
-
Source
Current (A)
1.7
V
GS
= 6 V
T
J
= 150 °C
1
T
J
= 25 °C
1.4
1.1
0.1
0.8
0.01
0.5
- 50
0.001
- 25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
0.025
Source Drain Diode Forward Voltage
0.7
R
DS(on)
- On-Resistance (Ω)
0.020
0.2
V
GS(th)
Variance (V)
0.015
- 0.3
I
D
= 250 μA
- 0.8
I
D
= 5 mA
- 1.3
0.010
T
J
= 150 °C
0.005
T
J
= 25 °C
0.000
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
- 1.8
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
54
I
D
= 10 mA
V
DS
- Drain-to-Source Voltage (V)
52
50
48
46
44
42
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S12-0568-Rev. A, 26-Mar-12
Document Number: 63770
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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