THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM35N30-97
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V
V
GS
= 0 V
On-State Drain Current
a
I
D(on)
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 150 V, R
L
= 16.7
Ω
I
D
≅
9 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
GS
= 10 V
V
DS
= 150 V, I
D
= 9 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
0.3
-
-
-
-
4515
320
146
86
16
28
0.75
20
40
35
20
5650
400
185
130
-
-
1.5
30
60
53
30
ns
Ω
nC
pF
g
fs
V
DS
= 300 V
V
DS
= 300 V, T
J
= 125 °C
V
DS
= 300 V, T
J
= 175 °C
V
DS
≥
5 V
I
D
= 10 A
I
D
= 10 A, T
J
= 125 °C
I
D
= 10 A, T
J
= 175 °C
300
2.5
-
-
-
-
30
-
-
-
-
-
3.0
-
-
-
-
-
0.078
-
-
40
-
3.5
± 100
1
50
1
-
0.097
0.214
0.285
-
S
Ω
V
nA
μA
mA
A
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 10 A
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
Forward Voltage
I
SM
V
SD
I
F
= 20 A, V
GS
= 0 V
-
-
-
0.8
75
1.5
A
V
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1874-Rev. B, 10-Aug-15
Document Number: 66742
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM35N30-97
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
90
60
Vishay Siliconix
72
I
D
- Drain Current (A)
V
GS
= 10 V thru 6 V
54
I
D
- Drain Current (A)
48
36
36
V
GS
= 5 V
24
T
C
= 25
°C
18
V
GS
= 4 V
0
3
6
9
12
15
12
T
C
= 125
°C
T
C
= - 55
°C
0
V
DS
- Drain-to-Source Voltage (V)
0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
120
T
C
= - 55
°C
96
g
fs
- Transconductance (S)
R
DS(on)
- On-Resistance (Ω)
T
C
= 25
°C
0.15
0.12
V
GS
= 10 V
0.09
72
T
C
= 125
°C
48
0.06
24
0.03
0
0
8
16
24
32
40
I
D
- Drain Current (A)
0.00
0
12
24
36
48
60
I
D
- Drain Current (A)
Transconductance
10
On-Resistance vs. Drain Current
6000
4800
C - Capacitance (pF)
C
iss
3600
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 9 A
V
DS
= 150 V
6
2400
4
1200
C
rss
C
oss
2
0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
0
0
20
40
60
80
100
Q
g
- Total
Gate
Charge (nC)
Capacitance
S15-1874-Rev. B, 10-Aug-15
Gate Charge
Document Number: 66742
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM35N30-97
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
3.0
R
DS(on)
- On-Resistance (Normalized)
I
D
= 10 A
2.5
I
S
-
Source
Current (A)
V
GS
= 10 V
2.0
10
T
J
= 150
°C
100
Vishay Siliconix
1
T
J
= 25
°C
0.1
1.5
1.0
0.01
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
0.50
1.0
Source Drain Diode Forward Voltage
0.40
R
DS(on)
- On-Resistance (Ω)
V
GS(th)
Variance (V)
0.4
0.30
T
J
= 150
°C
- 0.2
I
D
= 5 mA
- 0.8
0.20
0.10
T
J
= 25
°C
0.00
0
2
4
6
8
10
- 1.4
I
D
= 250 μA
- 2.0
- 50 - 25
0
25
50
75
100
125
150
175
V
GS
-
Gate-to-Source
Voltage (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
380
Threshold Voltage
V
DS
- Drain-to-Source Voltage (V)
360
I
D
= 10 mA
340
320
300
280
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S15-1874-Rev. B, 10-Aug-15
Document Number: 66742
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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