THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM25N15-52
www.vishay.com
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Forward
Resistance
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 20 A, V
GS
= 0 V
V
DD
= 75 V, R
L
= 3
Ω
I
D
≅
25 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
GS
= 10 V
V
DS
= 75 V, I
D
= 25 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
Transconductance
b
b
Vishay Siliconix
SYMBOL
TEST CONDITIONS
MIN.
150
2.5
-
-
-
-
30
-
-
-
-
-
-
-
-
-
-
0.35
-
-
-
-
-
-
TYP.
-
3
-
-
-
-
-
0.041
-
-
33
1886
215
97
34
14.5
5.4
1.0
11
21
20
12
-
0.85
MAX.
-
4
± 100
1
50
250
-
0.052
0.106
0.138
-
2360
270
125
51
-
-
3.2
17
33
30
20
65
1.5
A
V
ns
Ω
nC
pF
S
Ω
A
μA
UNIT
V
nA
V
DS
= 150 V
V
DS
= 150 V, T
J
= 125 °C
V
DS
= 150 V, T
J
= 175 °C
V
DS
≥
5 V
I
D
= 15 A
I
D
= 15 A, T
J
= 125 °C
I
D
= 15 A, T
J
= 175 °C
V
DS
= 15 V, I
D
= 15 A
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source
Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
Time
c
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1819-Rev. D, 10-Aug-15
Document Number: 72148
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM25N15-52
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 7 V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 6 V
30
40
50
Vishay Siliconix
30
T
C
= 25
°C
20
20
10
V
GS
= 5 V
10
T
C
= 125
°C
T
C
= - 55
°C
10
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
0
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
10
60
Transfer Characteristics
T
C
= - 55
°C
8
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
48
T
C
= 25
°C
36
T
C
= 125
°C
6
T
C
= 25
°C
4
24
2
T
C
= 125
°C
0
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
T
C
= - 55
°C
12
0
0
5
10
15
I
D
- Drain Current (A)
20
25
Transfer Characteristics
0.15
3000
Transconductance
0.12
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
2500
C
iss
2000
0.09
1500
0.06
V
GS
= 10 V
0.03
1000
C
oss
500
C
rss
0.00
0
10
20
30
40
50
I
D
- Drain Current (A)
0
0
15
30
45
60
75
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
S15-1819-Rev. D, 10-Aug-15
Capacitance
Document Number: 72148
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM25N15-52
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
3.0
I
D
= 5 A
2.5
Vishay Siliconix
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 25 A
V
DS
= 75 V
6
2.0
V
GS
= 10 V
1.5
4
2
1.0
0
0
5
10
15
20
25
30
35
40
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
0.25
On-Resistance vs. Junction Temperature
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
R
DS(on)
- On-Resistance (Ω)
0.20
0.15
0.1
T
J
= 25
°C
0.10
T
J
= 150
°C
0.01
0.05
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0.00
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source Drain Diode Forward Voltage
1.0
200
On-Resistance vs. Gate-to-Source Voltage
0.4
V
GS(th)
Variance (V)
V
DS
- Drain-to-Source Voltage (V)
I
D
= 10 mA
190
- 0.2
I
D
= 5 mA
180
- 0.8
I
D
= 250 μA
- 1.4
170
160
- 2.0
- 50 - 25
0
25
50
75
100
125
150
175
150
- 50 - 25
T
J
- Temperature (°C)
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Threshold Voltage
S15-1819-Rev. D, 10-Aug-15
Drain Source Breakdown vs. Junction Temperature
Document Number: 72148
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
