d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8x8L is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S14-2246-Rev. A, 10-Nov-14
Document Number: 62748
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJQ402E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V
V
GS
= 10 V
V
GS
= 10 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate
Gate-Drain
Charge
c
Charge
c
Gate-Source Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise
Time
c
Time
c
Turn-Off Delay
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
b
SYMBOL
TEST CONDITIONS
MIN.
40
1.5
-
-
-
-
100
-
-
-
-
-
-
TYP.
-
2
-
-
-
-
-
0.0013
0.0015
-
-
140
10 760
1370
650
169
32
29
1.3
19
15
69
11
-
0.82
MAX.
-
2.5
± 100
1
50
150
-
0.0017
0.0020
0.0026
0.0031
-
13 500
1800
850
260
-
-
2.5
30
25
110
20
300
1.2
UNIT
V
nA
μA
A
V
DS
= 40 V
V
DS
= 40 V, T
J
= 125 °C
V
DS
= 40 V, T
J
= 175 °C
V
DS
≥
5 V
I
D
= 20 A
I
D
= 10 A
I
D
= 20 A, T
J
= 125 °C
I
D
= 20 A, T
J
= 175 °C
Ω
g
fs
V
DS
= 15 V, I
D
= 20 A
S
V
GS
= 0 V
V
DS
= 20 V, f = 1 MHz
-
-
-
pF
V
GS
= 10 V
V
DS
= 20 V, I
D
= 40 A
f = 1 MHz
-
-
0.6
-
-
-
-
-
nC
Ω
V
DD
= 20 V, R
L
= 0.5
Ω
I
D
≅
40 A, V
GEN
= 10 V, R
g
= 1
Ω
ns
Source-Drain Diode Ratings and Characteristics
I
SM
V
SD
A
V
I
F
= 50 A, V
GS
= 0
-
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-2246-Rev. A, 10-Nov-14
Document Number: 62748
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJQ402E
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
250
V
GS
= 10 V thru 4 V
200
I
D
- Drain Current (A)
C - Capacitance (pF)
12 800
C
iss
9600
16 000
Vishay Siliconix
150
100
V
GS
= 3 V
50
6400
3200
C
oss
0
0
3
6
9
12
V
DS
- Drain-to-Source Voltage (V)
15
0
0
C
rss
8
16
24
32
V
DS
- Drain-to-Source Voltage (V)
40
Output Characteristics
160
10
Capacitance
V
GS
-
Gate-to-Source
Voltage (V)
128
I
D
- Drain Current (A)
8
I
D
= 40 A
V
DS
= 20 V
6
96
T
C
= 25
°C
64
T
C
= 125
°C
4
32
T
C
= -55
°C
2
0
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
0
0
40
80
120
160
Q
g
- Total
Gate
Charge (nC)
200
Transfer Characteristics
0.0050
R
DS(on)
- On-Resistance (Normalized)
2.0
I
D
= 20 A
1.7
Gate Charge
0.0040
R
DS(on)
- On-Resistance (Ω)
V
GS
= 10 V
0.0030
1.4
V
GS
= 4.5 V
1.1
0.0020
V
GS
= 4.5 V
0.0010
V
GS
= 10 V
0.8
0.0000
0
20
40
60
I
D
- Drain Current (A)
80
100
0.5
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
On-Resistance vs. Drain Current
S14-2246-Rev. A, 10-Nov-14
On-Resistance vs. Junction Temperature
Document Number: 62748
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJQ402E
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
52
Vishay Siliconix
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
T
J
= 25
°C
0.1
V
DS
- Drain-to-Source Voltage (V)
50
I
D
= 1 mA
48
46
0.01
44
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
42
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Source Drain Diode Forward Voltage
0.010
Drain Source Breakdown vs. Junction Temperature
1000
I
DM
Limited
100
I
D
- Drain Current (A)
I
D
Limited
10
1 ms
10 ms, 100 ms,
1
s,10 s,
DC
1
Limited by R
DS(on)
*
0.008
R
DS(on)
- On-Resistance (Ω)
100 μs
0.006
0.004
T
J
= 125
°C
0.002
T
J
= 25
°C
0.000
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
0.1
BVDSS Limited
T
C
= 25
°C
Single
Pulse
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
100
0.01
0.01
On-Resistance vs. Gate-to-Source Voltage
0.6
Safe Operating Area
0.2
V
GS(th)
Variance (V)
-0.2
I
D
= 5 mA
-0.6
I
D
= 250 μA
-1.0
-1.4
-50
-25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
175
Threshold Voltage
S14-2246-Rev. A, 10-Nov-14
Document Number: 62748
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?62748.
S14-2246-Rev. A, 10-Nov-14
Document Number: 62748
5
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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