Automotive Dual N-Channel 75 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= 10 V
R
DS(on)
() at V
GS
= 4.5 V
I
D
(A) per leg
Configuration
75
0.050
0.066
8
Dual
FEATURES
•
•
•
•
TrenchFET
®
Power MOSFET
AEC-Q101 Qualified
d
100 % R
g
and UIS Tested
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D
1
D
2
PowerPAK
®
SO-8L Dual
m
5m
6.1
D
2
5.1
3m
m
G
1
D
1
G
2
G
2
4
S
2
3
2
G
1
S
1
1
S
1
Bottom View
N-Channel MOSFET
S
2
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SO-8L
SQJ980AEP-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Continuous Source Current (Diode
Pulsed Drain Current
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Temperature)
e, f
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
Conduction)
a
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
75
± 20
17
10
30
68
14
10
34
11
- 55 to + 175
260
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
85
4.3
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection..
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S13-0674-Rev. A, 25-Mar-13
Document Number: 62833
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ980AEP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 2.4 A, V
GS
= 0
V
DD
= 35 V, R
L
= 35
I
D
1 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 35 V, I
D
= 9.7 A
V
GS
= 0 V
V
DS
= 35 V, f = 1 MHz
-
-
-
-
-
-
1.3
-
-
-
-
-
-
630
84
36
14
2.3
2.9
2.67
9
10
16
12
-
0.8
790
105
45
21
-
-
4
14
15
24
18
68
1.1
A
V
ns
nC
pF
g
fs
V
DS
= 75 V
V
DS
= 75 V, T
J
= 125 °C
V
DS
= 75 V, T
J
= 175 °C
V
DS
5
V
I
D
= 3.8 A
I
D
= 3.8 A, T
J
= 125 °C
I
D
= 3.8 A, T
J
= 175 °C
I
D
= 3.3 A
75
1.5
-
-
-
-
30
-
-
-
-
-
-
2.0
-
-
-
-
-
0.041
-
-
0.055
14
-
2.5
± 100
1
50
150
-
0.050
0.089
0.116
0.066
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 3.8 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-0674-Rev. A, 25-Mar-13
Document Number: 62833
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ980AEP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
60
V
GS
= 10 V thru 5 V
48
I
D
- Drain Current (A)
V
GS
= 4 V
I
D
- Drain Current (A)
32
40
Vishay Siliconix
36
24
T
C
= 25
°C
16
24
V
GS
= 3 V
12
V
GS
= 2 V
0
0
3
6
9
12
15
V
DS
- Drain-to-Source Voltage (V)
8
T
C
= 125
°C
0
0
2
4
T
C
= - 55
°C
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
10.0
30
Transfer Characteristics
T
C
= 25
°C
T
C
= - 55
°C
8.0
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
25
20
6.0
T
C
= 25
°C
4.0
15
T
C
= 125
°C
10
2.0
T
C
= 125
°C
T
C
= - 55
°C
5
0.0
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
0
0
3
6
9
12
15
I
D
- Drain Current (A)
Transfer Characteristics
0.25
1000
Transconductance
0.20
R
DS(on)
- On-Resistance (Ω)
800
V
GS
= 4.5 V
0.15
C - Capacitance (pF)
C
iss
600
0.10
400
0.05
V
GS
= 10 V
0.00
0
12
24
36
48
60
200
C
oss
C
rss
0
0
15
30
45
60
75
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
S13-0674-Rev. A, 25-Mar-13
Document Number: 62833
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ980AEP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
2.5
Vishay Siliconix
I
D
= 9.7 A
V
DS
= 37.5 V
V
GS
-
Gate-to-Source
Voltage (V)
I
D
= 20 A
2.1
V
GS
= 4.5 V
1.7
V
GS
= 10 V
1.3
8
6
4
2
0.9
0
0
3
6
9
12
15
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
0.50
On-Resistance vs. Junction Temperature
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
T
J
= 25
°C
R
DS(on)
- On-Resistance (Ω)
0.40
0.30
0.1
0.20
T
J
= 150
°C
0.10
T
J
= 25
°C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.00
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
0.5
100
On-Resistance vs. Gate-to-Source Voltage
I
D
= 1 mA
0.1
V
DS
- Drain-to-Source Voltage (V)
95
V
GS(th)
Variance (V)
- 0.3
I
D
= 5 mA
90
- 0.7
85
I
D
= 250 μA
- 1.1
80
- 1.5
- 50 - 25
0
25
50
75
100
125
150
175
75
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
T
J
- Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S13-0674-Rev. A, 25-Mar-13
Document Number: 62833
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
目前医疗监护中无法动态掌握患者信息，一旦患者病情恶化，无法在第一时间实施抢救，对数据信息维护效率低。 文中首先阐述了蓝牙技术及其在医疗监护中应用的可行性，然后设计了系统框架，给出了具体功能，BlueTooth Wireless Communication Technology Application in Medical Monitoring包括数据采集和语音报警，最后对蓝牙信号在传输...[详细]
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
