e. See solder profile (www.vishay.com/doc?73257).The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-1832-Rev. A, 10-Aug-15
Document Number: 62914
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ460AEP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V
V
GS
= 0 V
On-State Drain Current
a
I
D(on)
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 30
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
GS
= 10 V
V
DS
= 30 V, I
D
= 18 A
V
GS
= 0 V
V
DS
= 30 V, f = 1 MHz
-
-
-
-
-
-
1
-
-
-
-
2123
282
118
71
9.7
12.5
2.1
12
11
56
25
2654
353
148
106
-
-
3.2
18
17
84
32
ns
Ω
nC
pF
g
fs
V
DS
= 60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
≥
5 V
I
D
= 10.7 A
I
D
= 19.7 A, T
J
= 125 °C
I
D
= 10.7 A, T
J
= 175 °C
I
D
= 10.3 A
60
1.5
-
-
-
-
30
-
-
-
-
-
-
2.0
-
-
-
-
-
0.0072
-
-
0.0078
88
-
2.5
± 100
1
50
150
-
0.0087
0.0145
0.0183
0.0094
-
S
Ω
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 10.7 A
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
Forward Voltage
I
SM
V
SD
I
F
= 7.5 A, V
GS
= 0
-
-
-
0.8
256
1.2
A
V
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1832-Rev. A, 10-Aug-15
Document Number: 62914
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ460AEP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
40
V
GS
= 10 V thru 4 V
32
Vishay Siliconix
40
32
I
D
- Drain Current (A)
I
D
- Drain Current (A)
24
V
GS
= 3 V
24
16
16
T
C
= 25
°C
8
8
T
C
= 125
°C
T
C
= - 55
°C
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
Output Characteristics
Transfer Characteristics
10
200
T
C
= - 55
°C
8
160
g
fs
- Transconductance (S)
T
C
= 25
°C
I
D
- Drain Current (A)
6
120
4
T
C
= 25
°C
80
T
C
= 125
°C
2
40
T
C
= 125
°C
T
C
= - 55
°C
0
0
1
2
3
4
5
0
0.0
5.0
10.0
15.0
20.0
25.0
V
GS
-
Gate-to-Source
Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
Transconductance
0.015
6000
0.012
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
4800
0.009
V
GS
= 4.5 V
3600
C
iss
2400
0.006
V
GS
= 10 V
0.003
1200
C
rss
C
oss
0.000
0
8
16
24
32
40
I
D
- Drain Current (A)
0
0
12
24
36
48
60
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
S15-1832-Rev. A, 10-Aug-15
Capacitance
Document Number: 62914
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ460AEP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
Vishay Siliconix
2.5
I
D
= 18 A
2.1
V
GS
= 10 V
1.7
V
GS
= 4.5 V
1.3
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 18 A
V
DS
= 30 V
6
4
2
0.9
0
0
20
40
60
Q
g
- Total
Gate
Charge (nC)
80
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.05
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
R
DS(on)
- On-Resistance (Ω)
0.04
0.03
0.1
T
J
= 25
°C
0.01
0.02
T
J
= 150
°C
0.01
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0.00
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
85
I
D
= 1 mA
V
DS
- Drain-to-Source Voltage (V)
150
175
0.2
V
GS(th)
Variance (V)
81
- 0.1
I
D
= 5 mA
77
- 0.4
I
D
= 250 μA
- 0.7
73
69
- 1.0
- 50 - 25
0
25
50
75
100
125
T
J
- Temperature (°C)
65
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Threshold Voltage
S15-1832-Rev. A, 10-Aug-15
Drain Source Breakdown vs. Junction Temperature
Document Number: 62914
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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