e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S13-1414-Rev. B, 24-Jun-13
Document Number: 67997
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ402EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 7 A, V
GS
= 0 V
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 50 V, I
D
= 10 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
0.65
-
-
-
-
-
-
1829
722
62
34
6
13
1.39
10
10
27
7
-
0.77
2286
903
78
51
-
-
2
15
15
40
11
75
1.2
A
V
ns
nC
pF
g
fs
V
DS
= 100 V
V
DS
= 100 V, T
J
= 125 °C
V
DS
= 100 V, T
J
= 175 °C
V
DS
5
V
I
D
= 10.7 A
I
D
= 10.7 A, T
J
= 125 °C
I
D
= 10.7 A, T
J
= 175 °C
I
D
= 9.5 A
100
1.5
-
-
-
-
30
-
-
-
-
-
-
2.0
-
-
-
-
-
0.0090
-
-
0.0115
54
-
2.5
± 100
1
50
150
-
0.0110
0.0170
0.0210
0.0140
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 10.7 A
Source-Drain Diode Ratings and Characteristics
b
Notes
g. Pulse test; pulse width
300 μs, duty cycle
2 %.
h. Guaranteed by design, not subject to production testing.
i. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1414-Rev. B, 24-Jun-13
Document Number: 67997
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ402EP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
80
V
GS
= 10 V thru 7 V
64
I
D
- Drain Current (A)
64
80
Vishay Siliconix
I
D
- Drain Current (A)
V
GS
= 4 V
48
48
T
C
= 25
°C
32
32
16
V
GS
= 3 V
0
0
3
6
9
12
15
V
DS
- Drain-to-Source Voltage (V)
16
T
C
= 125
°C
0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
T
C
= - 55
°C
Output Characteristics
100
T
C
= - 55
°C
80
g
fs
- Transconductance (S)
10.0
Transfer Characteristics
T
C
= 25
°C
I
D
- Drain Current (A)
8.0
60
T
C
= 125
°C
40
6.0
4.0
T
C
= 25
°C
20
2.0
T
C
= 125
°C
T
C
= - 55
°C
0.0
0
0
5
10
15
I
D
- Drain Current (A)
20
25
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
Transconductance
4000
Transfer Characteristics
0.025
3200
0.020
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
2400
C
iss
1600
C
oss
800
C
rss
0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
0.015
V
GS
= 4.5 V
0.010
0.005
V
GS
= 10 V
0.000
0
16
32
48
64
80
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
S13-1414-Rev. B, 24-Jun-13
Document Number: 67997
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ402EP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
I
D
= 10 A
V
GS
-
Gate-to-Source
Voltage (V)
100
Vishay Siliconix
8
I
S
-
Source
Current (A)
10
V
DS
= 50 V
6
T
J
= 150
°C
1
4
0.1
T
J
= 25
°C
0.01
2
0
0
8
16
24
32
40
Q
g
- Total
Gate
Charge (nC)
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
Gate Charge
2.5
R
DS(on)
- On-Resistance (Normalized)
Source Drain Diode Forward Voltage
0.5
I
D
= 20 A
2.0
V
GS
= 10 V
0.1
V
GS(th)
Variance (V)
I
D
= 5 mA
- 0.3
I
D
= 250 μA
- 0.7
1.5
V
GS
= 4.5 V
1.0
- 1.1
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
- 1.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
125
Threshold Voltage
V
DS
- Drain-to-Source Voltage (V)
0.04
R
DS(on)
- On-Resistance (Ω)
120
I
D
= 1 mA
0.03
115
0.02
T
J
= 25
°C
110
0.01
T
J
= 150
°C
105
0.00
0
2
4
6
8
10
100
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
V
GS
-
Gate-to-Source
Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
S13-1414-Rev. B, 24-Jun-13
Document Number: 67997
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
在全球半导体产业因景气不佳而纷传并购、整合之际，两大IT巨头三星、IBM日前却双双宣布，将强化半导体产业投资。 三星电子本周一宣布，已向韩国证券交易所提交一份申请文件，打算2008年投下10.5亿美元，用于升级内存芯片生产线、改进技术工艺，从而提高产能并降低成本。无独有偶。本周二IBM公司宣布，未来3年将投资10亿美元，用于扩充位于纽约州 East Fishkill 的半导体工厂，以消...[详细]
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