PESD36VS1UL
Unidirectional ESD protection diode
Rev. 1 — 5 March 2012
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small
SOD882 Surface-Mounted Device (SMD) plastic package designed to protect one signal
line from the damage caused by ESD and other transients.
1.2 Features and benefits
ESD protection of one line
Ultra small SMD plastic package
AEC-Q101 qualified
ESD protection up to 30 kV
IEC 61000-4-5; (surge); I
PPM
= 2.5 A
Rated peak pulse power: P
PPM
= 150 W
Ultra low leakage current: I
RM
< 1 nA
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Portable electronics
Communication systems
1.4 Quick reference data
Table 1.
Symbol
V
RWM
C
d
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
Conditions
Min
-
-
Typ
-
-
Max
36
30
Unit
V
pF
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
sym035
1
2
Transparent
top view
[1]
The marking bar indicates the cathode.
NXP Semiconductors
PESD36VS1UL
Unidirectional ESD protection diode
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD36VS1UL
-
Description
Version
leadless ultra small plastic package; 2 terminals; SOD882
body 1.0
0.6
0.5 mm
Type number
4. Marking
Table 4.
Marking codes
Marking code
TC
Type number
PESD36VS1UL
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PPM
I
PPM
T
j
T
amb
T
stg
[1]
[2]
Parameter
rated peak pulse power
rated peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
s
t
p
= 8/20
s
[1][2]
[1][2]
Min
-
-
-
55
65
Max
150
2.5
150
+150
+150
Unit
W
A
C
C
C
Device stressed with ten non-repetitive current pulses (8/20
s
exponential decay waveform according to
IEC 61000-4-5 and IEC 61643-321).
Measured from pin 1 to pin 2.
Table 6.
Symbol
V
ESD
ESD maximum ratings
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883
(human body model)
[1][2]
Min
-
-
-
Max
30
400
10
Unit
kV
V
kV
[2]
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to pin 2.
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
PESD36VS1UL
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 5 March 2012
2 of 11
NXP Semiconductors
PESD36VS1UL
Unidirectional ESD protection diode
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
s
pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
V
RWM
I
RM
V
BR
C
d
V
CL
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
I
PP
= 1 A
I
PPM
= 2.5 A
r
dyn
[1]
[2]
[3]
Conditions
V
RWM
= 36 V
I
R
= 2 mA
f = 1 MHz; V
R
= 0 V
[1][2]
Min
-
-
38.2
-
-
-
[3]
Typ
-
<1
39.0
18
-
-
9.5
Max
36
10
39.8
30
58
80
-
Unit
V
nA
V
pF
V
V
dynamic resistance
I
R
= 10 A
-
Device stressed with 8/20
s
exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
Measured from pin 1 to pin 2.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5-1-2008.
PESD36VS1UL
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 5 March 2012
3 of 11
NXP Semiconductors
PESD36VS1UL
Unidirectional ESD protection diode
10
2
P
PPM
(W)
aaa-002437
1.2
P
PPM
P
PPM(25°C)
0.8
006aab321
10
0.4
1
10
-1
0
1
t
p
(ms)
10
0
50
100
150
T
j
(°C)
200
T
amb
= 25
C
Fig 3.
Rated peak pulse power as a function of
square pulse duration; maximum values
Fig 4.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
I
20
C
d
(pF)
16
aaa-002438
12
−V
CL
−V
BR
−V
RWM
−I
RM
−I
R
V
8
−
4
P-N
+
0
0
8
16
24
32
V
R
(V)
40
−I
PP
−I
PPM
006aab324
f = 1 MHz; T
amb
= 25
C
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
V-I characteristics for a unidirectional ESD
protection diode
PESD36VS1UL
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 5 March 2012
4 of 11
NXP Semiconductors
PESD36VS1UL
Unidirectional ESD protection diode
ESD TESTER
Rd
450 Ω
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10x
ATTENUATOR
50 Ω
Cs
IEC 61000-4-2 network
C
s
= 150 pF; R
d
= 330 Ω
DUT
(DEVICE
UNDER
TEST)
vertical scale = 2 kV/div
horizontal scale = 10 ns/div
vertical scale = 100 V/div
horizontal scale = 10 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 2 kV/div
horizontal scale = 10 ns/div
GND
vertical scale = 100 V/div
horizontal scale = 10 ns/div
GND
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-002439
Fig 7.
ESD clamping test setup and waveforms
PESD36VS1UL
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 5 March 2012
5 of 11