UNISONIC TECHNOLOGIES CO., LTD
BC337/BC338
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
NPN SILICON TRANSISTOR
* Suitable for AF-Driver stages and low power output stages
* Complement to UTC BC327/328
1
TO-92
ORDERING INFORMATION
Ordering Number
Halogen Free
BC337G-xx-T92-B
BC337G-xx-T92-K
BC338G-xx-T92-B
BC338G-xx-T92-K
B: Base
E: Emitter
Package
TO-92
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
C
B
E
C
B
E
C
B
E
C
B
E
Packing
Tape Box
Bulk
Tape Box
Bulk
Lead Free
BC337L-xx-T92-B
BC337L-xx-T92-K
BC338L-xx-T92-B
BC338L-xx-T92-K
Note: Pin Assignment: C: Collector
MARKING
BC337
BC338
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Copyright © 2014 Unisonic Technologies Co., LTD
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QW-R201-039.E
BC337/BC338
PARAMETER
SYMBOL
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
RATINGS
UNIT
BC337
50
V
Collector-Emitter Voltage
V
CES
BC338
30
V
BC337
45
V
Collector-Emitter Voltage
V
CEO
BC338
25
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current (DC)
I
C
800
mA
625
mW
Collector Dissipation
P
C
Derate Above 25°C
5
mW/°C
Junction Temperature
T
J
125
°C
Operating Temperature
T
OPR
-20 ~ +85
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
θ
JA
θ
Jc
RATINGS
200
83.3
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE1
h
FE2
V
CE(SAT)
V
BE(ON)
C
ob
f
T
TEST CONDITIONS
I
C
=10mA, I
B
=0
I
C
=0.1mA, V
BE
=0
I
E
=0.1mA, I
C
=0
V
CE
=45V, I
B
=0
V
CE
=25V, I
B
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=300mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=5V, I
C
=10mA, f=50MHz
MIN
45
25
50
30
5
TYP
MAX UNIT
V
V
V
V
V
100
nA
100
nA
630
0.7
1.2
12
100
V
V
pF
MHz
BC337
BC338
BC337
Collector-Emitter Breakdown Voltage
BC338
Emitter-Base Breakdown Voltage
BC337
Collector Cut-off Current
BC338
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain Bandwidth Product
2
2
100
60
CLASSIFICATION OF h
FE1
RANK
h
FE1
16
100-250
25
160-400
40
250-630
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs.
Base-Emitter Voltage
Common Emitter
V
CE
=1V
Collector Power Dissipation vs.
Ambient Temperature
Collector Power Dissipation, P
C
(mW)
5K
1K
300
100
30
10
3
1
0.2
700
600
500
400
300
200
100
0
0
Collector Current, I
C
(mA)
=1
00
℃
=2
5
℃
T
A
T
A
=-2
5
℃
T
A
0.8
0.6
0.4
Base-Emitter Voltage, V
BE
(V)
1.0
25 50
75 100 125 150 175
Ambient Temperature, T
A
(℃)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Collector Current vs.
Collector-Emitter Voltage
I
B
=10mA
I
B
=9mA
I
B
=8mA
I
B
=7mA
I
B
=6mA
I
B
=5mA
I
B
=4mA
I
B
=3mA
I
B
=2mA
I
B
=1mA
0 1 2 3 4 5 6 7 8 9 10
Collector-Emitter Voltage, V
CE
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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