d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S14-2054-Rev. B, 20-Oct-14
Document Number: 62855
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS850EN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward
Transconductance
b
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
c
SYMBOL
TEST CONDITIONS
MIN.
60
1.5
-
-
-
-
20
-
-
-
-
-
-
TYP.
-
2.0
-
-
-
-
-
0.0180
-
-
0.0218
33
1617
132
53
27.4
4.9
4.6
1.25
9
9.6
25
9.3
-
0.78
MAX.
-
2.5
± 100
1
50
150
-
0.0215
0.0360
0.0460
0.0261
-
2021
165
66
41
-
-
2.5
13.4
14.4
38
14
48
1.2
UNIT
V
nA
μA
A
V
DS
= 60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
≥
5 V
I
D
= 6.1 A
I
D
= 6.1 A, T
J
= 125 °C
I
D
= 6.1 A, T
J
= 175 °C
I
D
= 5.5 A
Ω
V
DS
= 15 V, I
D
= 6.1 A
S
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate
Charge
c
Charge
c
Gate-Source
V
GS
= 0 V
V
DS
= 30 V, f = 1 MHz
-
-
-
V
GS
= 10 V
V
DS
= 30 V, I
D
= 8.7 A
f = 1 MHz
V
DD
= 30 V, R
L
= 30
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 1
Ω
-
-
0.6
-
-
-
-
-
I
F
= 4 A, V
GS
= 0 V
-
pF
nC
Ω
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
Rise Time
c
Turn-Off Delay
Fall Time
c
Pulsed Current
a
Forward Voltage
Time
c
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
ns
Source-Drain Diode Ratings and Characteristics
b
A
V
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-2054-Rev. B, 20-Oct-14
Document Number: 62855
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS850EN
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
30
V
GS
= 10 V thru 4 V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
24
30
Vishay Siliconix
18
18
12
12
T
C
= 25
°C
6
V
GS
= 3 V
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
6
T
C
= 125
°C
0
0
1
2
3
T
C
= - 55
°C
4
5
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
5.0
Transfer Characteristics
60
T
C
= 25
°C
T
C
= - 55
°C
4.0
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
48
3.0
36
T
C
= 125
°C
24
2.0
T
C
= 25
°C
1.0
T
C
= 125
°C
T
C
= - 55
°C
0.0
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
12
0
0.0
3.0
6.0
9.0
12.0
15.0
I
D
- Drain Current (A)
Transfer Characteristics
Transconductance
0.05
2500
R
DS(on)
- On-Resistance (Ω)
0.04
C - Capacitance (pF)
2000
C
iss
1500
0.03
V
GS
= 4.5 V
0.02
V
GS
= 10 V
1000
0.01
500
C
rss
C
oss
0.00
0
6
12
18
I
D
- Drain Current (A)
24
30
0
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
S14-2054-Rev. B, 20-Oct-14
Capacitance
Document Number: 62855
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS850EN
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
2.5
R
DS(on)
- On-Resistance (Normalized)
I
D
= 8.7 A
V
DS
= 30 V
I
D
= 5.3 A
2.0
V
GS
= 10 V
Vishay Siliconix
V
GS
-
Gate-to-Source
Voltage (V)
8
6
1.5
V
GS
= 4.5 V
1.0
4
2
0
0
6
12
18
24
30
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
On-Resistance vs. Junction Temperature
0.10
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
R
DS(on)
- On-Resistance (Ω)
0.08
0.06
T
J
= 150
°C
0.1
T
J
= 25
°C
0.04
0.01
0.02
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.00
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source Drain Diode Forward Voltage
0.5
90
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance (V)
V
DS
- Drain-to-Source Voltage (V)
I
D
= 1 mA
85
- 0.1
I
D
= 5 mA
- 0.4
I
D
= 250 μA
- 0.7
80
75
- 1.0
- 50 - 25
0
25
50
75
100
125
150
175
70
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
T
J
- Temperature (°C)
Threshold Voltage
S14-2054-Rev. B, 20-Oct-14
Drain Source Breakdown vs. Junction Temperature
Document Number: 62855
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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