d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-0545-Rev. A, 18-Mar-15
Document Number: 62984
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS405ENW
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= -4.5 V
V
GS
= -4.5 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -4.5 V
V
GS
= -4.5 V
V
GS
= -2.5 V
Forward Transconductance
b
Dynamic
b
SYMBOL
TEST CONDITIONS
MIN.
-12
-0.45
-
-
-
-
-20
-
-
-
-
-
-
TYP.
-
-0.6
-
-
-
-
-
0.014
-
-
0.017
34
2210
840
660
49.8
3.8
8.2
2.4
27
29
59
26
-
-0.8
MAX.
-
-1
± 100
-1
-50
-150
-
0.020
0.024
0.026
0.026
-
2650
1010
800
75
5.9
15
4
34.5
35
72
32
-64
-1.1
UNIT
V
nA
μA
A
V
DS
= -12 V
V
DS
= -12 V, T
J
= 125 °C
V
DS
= -12 V, T
J
= 175 °C
V
DS
≤
-5 V
I
D
= -13.5 A
I
D
= -13.5 A
I
D
= -13.5 A
I
D
= -12 A
Ω
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
b
V
DS
= -6 V, I
D
= -13.5 A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain
Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise
Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
V
GS
= 0 V
V
DS
= -6 V, f = 1 MHz
-
-
-
pF
V
GS
= -8 V
V
DS
= -6 V, I
D
= -10 A
f = 1 MHz
-
-
1.1
-
-
-
-
-
nC
Ω
V
DD
= -6 V, R
L
= 0.6
Ω
I
D
≅
-1.5 A, V
GEN
= -4.5 V, R
g
= 1
Ω
ns
Source-Drain Diode Ratings and Characteristics
I
SM
A
V
V
SD
I
F
= -10 A, V
GS
= 0
-
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0545-Rev. A, 18-Mar-15
Document Number: 62984
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS405ENW
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
30
V
GS
= 5 V thru 2 V
Vishay Siliconix
30
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
24
18
18
T
C
= 25 °C
12
1.5 V
12
6
6
T
C
= 125 °C
T
C
= - 55 °C
0
0
2
4
6
8
10
0
0.0
0.6
1.2
1.8
2.4
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
50
T
C
= 25
°C
40
g
fs
- Transconductance (S)
R
DS(on)
- On-Resistance (Ω)
T
C
= - 55
°C
0.08
0.06
V
GS
= 1.8 V
0.04
30
T
C
= 125
°C
20
0.02
V
GS
= 2.5 V
10
V
GS
= 4.5 V
0
0
6
12
18
I
D
- Drain Current (A)
24
30
0.00
0
6
12
18
I
D
- Drain Current (A)
24
30
Transconductance
On-Resistance vs. Drain Current
4000
3500
3000
C - Capacitance (pF)
2500
C
iss
2000
1500
C
oss
1000
C
rss
500
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
12
8
V
DS
= 6 V
I
D
= 10 A
V
GS
- Gate-to-Source Voltage (V)
6
4
2
0
0
10
20
30
40
Q
g
- Total Gate Charge (nC)
50
Capacitance
S15-0545-Rev. A, 18-Mar-15
Gate Charge
Document Number: 62984
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS405ENW
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
1.3
R
DS(on)
- On-Resistance (Normalized)
I
D
= 13 A
Vishay Siliconix
100
1.2
10
I
S
-
Source
Current (A)
T
J
= 150 °C
1.1
V
GS
= 4.5 V
1
T
J
= 25 °C
1.0
0.1
0.9
0.01
0.8
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.10
0.4
I
D
= 250 μA
0.08
R
DS(on)
- On-Resistance (Ω)
V
GS(th)
Variance (V)
0.3
0.2
I
D
= 5 mA
0.1
0.06
0.04
T
J
= 150 °C
0.0
0.02
T
J
= 25 °C
- 0.1
0.00
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
- 0.2
- 50 - 25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
175
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
- 13.0
- 13.5
Brreakdown Voltage
I
D
= 1 mA
- 14.0
- 14.5
- 15.0
- 15.5
- 16.0
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S15-0545-Rev. A, 18-Mar-15
Document Number: 62984
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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