e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-1309-Rev. A, 09-Jun-15
Document Number: 67977
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS401ENW
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= -10 V
V
GS
= -10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V
V
GS
= -10 V
V
GS
= -4.5 V
Forward
Transconductance
b
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= -8.8 A, V
GS
= 0 V
V
DD
= -20 V, R
L
= 14.2
Ω
I
D
≅
-1.4 A, V
GEN
= -10 V, R
g
= 1
Ω
f = 1 MHz
V
GS
= -4.5 V
V
DS
= -20 V, I
D
= -9.3 A
V
GS
= 0 V
V
DS
= -20 V, f = 1 MHz
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source
Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
Time
c
-
-
-
-
-
-
1.1
-
-
-
-
-
-
1565
245
170
17.7
5.6
8.1
1.95
11
10
36.5
10.2
-
-0.8
1875
295
205
21.2
6.6
9.7
2.8
14
13
44
13
-64
-1.1
A
V
ns
Ω
nC
pF
V
DS
= -40 V
V
DS
= -40 V, T
J
= 125 °C
V
DS
= -40 V, T
J
= 175 °C
V
DS
≥
5 V
I
D
= -12 A
I
D
= -12 A, T
J
= 125 °C
I
D
= -12 A, T
J
= 175 °C
I
D
= -9 A
-40
-1.5
-
-
-
-
-20
-
-
-
-
-
-
-2.0
-
-
-
-
-
0.020
0.030
0.040
0.035
12
-
-2.5
± 100
-1
-50
-150
-
0.029
0.043
0.051
0.047
-
S
Ω
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= -15 V, I
D
= -7 A
Source-Drain Diode Ratings and Characteristic
b
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1309-Rev. A, 09-Jun-15
Document Number: 67977
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS401ENW
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
30
V
GS
= 10 V thru 5 V
24
I
D
- Drain Current (A)
V
GS
= 4 V
18
I
D
- Drain Current (A)
30
Vishay Siliconix
24
18
12
12
T
C
= 25 °C
6
T
C
= 125 °C
0
T
C
= -55 °C
0
1
2
3
4
5
6
V
GS
= 3 V
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
6
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
30
0.10
Transfer Characteristics
g
fs
- Transconductance (S)
T
C
= 25 °C
18
R
DS(on)
- On-Resistance (Ω)
24
T
C
= -55 °C
0.08
0.06
V
GS
= 4.5 V
0.04
V
GS
= 10 V
0.02
12
T
C
= 125 °C
6
0
0
4
8
12
I
D
- Drain Current (A)
16
20
0.00
0
6
12
18
24
30
I
D
- Drain Current (A)
Transconductance
2500
6
On-Resistance vs. Drain Current
V
DS
= 20 V
I
D
= 9.3 A
2000
C - Capacitance (pF)
C
iss
1500
V
GS
- Gate-to-Source Voltage (V)
5
4
3
1000
C
oss
500
C
rss
0
0
10
20
30
V
DS
- Drain-to-Source Voltage (V)
40
2
1
0
0
5
10
15
20
25
Q
g
- Total Gate Charge (nC)
Capacitance
S15-1309-Rev. A, 09-Jun-15
Gate Charge
Document Number: 67977
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS401ENW
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
1.8
R
DS(on)
- On-Resistance (Normalized)
I
D
= 11 A
1.6
V
GS
= 10 V
I
S
- Source Current (A)
10
T
J
= 150 °C
1
T
J
= 25 °C
100
Vishay Siliconix
1.4
V
GS
= 4.5 V
1.2
0.1
1.0
0.8
0.01
0.6
-50
-25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
0.25
1.1
Source Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.20
V
GS(th)
Variance (V)
0.8
I
D
= 250 µA
0.5
I
D
= 5 mA
0.2
0.15
0.10
0.05
T
J
= 25 °C
0
1
T
J
= 150 °C
-0.1
0.00
-0.4
9
10
-50
-25
0
25
50
75 100 125
T
J
- Temperature (°C)
150
175
2
3
4
5
6
7
8
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
-40
I
D
= 1 mA
-42
Threshold Voltage
V
DS
- Drain-to-Source Voltage (V)
-44
-46
-48
-50
-50
-25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S15-1309-Rev. A, 09-Jun-15
Document Number: 67977
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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