THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQR50N04-3m8
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Source-Drain Diode Ratings and
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
Characteristics
b
I
SM
V
SD
I
F
= 30 A, V
GS
= 0 V
-
-
-
0.9
200
1.5
A
V
V
DD
= 20 V, R
L
= 0.4
I
D
50 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 20 V, I
D
= 50 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
0.9
-
-
-
-
5360
500
250
70
16
13
1.9
11
5
34
9
6700
627
310
105
-
-
2.9
16
8
51
14
ns
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
DS
= 40 V
V
DS
= 40 V, T
J
= 125 °C
V
DS
= 40 V, T
J
= 175 °C
V
DS
5
V
I
D
= 20 A
I
D
= 20 A, T
J
= 125 °C
I
D
= 20 A, T
J
= 175 °C
40
2.5
-
-
-
-
50
-
-
-
-
-
3.0
-
-
-
-
-
0.0030
-
-
120
-
3.5
± 100
1
50
150
-
0.0038
0.0064
0.0076
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 15 A
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-0451-Rev. A, 04-Mar-13
Document Number: 62783
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQR50N04-3m8
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 5 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Vishay Siliconix
100
80
60
60
40
V
GS
= 4 V
20
40
T
C
= 25 °C
20
T
C
= 125 °C
T
C
= - 55 °C
0
0
3
6
9
12
15
V
DS
- Drain-to-Source Voltage (V)
0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
350
T
C
= - 55 °C
280
g
fs
- Transconductance (S)
R
DS(on)
- Resistance (Ω)
T
C
= 25 °C
210
T
C
= 125 °C
140
0.008
0.010
Transfer Characteristics
0.006
0.004
V
GS
= 10
V
70
0.002
0
0
14
28
42
56
70
I
D
- Drain Current (A)
0.000
0
20
40
60
I
D
- Drain Current (A)
80
100
Transconductance
10
7000
On-Resistance vs. Drain Current
I
D
= 50 A
6000
C - Capacitance (pF)
C
iss
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 20 V
6
5000
4000
3000
2000
C
oss
1000
0
0
C
rss
10
20
30
40
4
2
0
0
10
20
30
40
50
60
70
80
90
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total
Gate
Charge (nC)
Capacitance
S13-0451-Rev. A, 04-Mar-13
Gate Charge
Document Number: 62783
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQR50N04-3m8
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
R
DS(on)
- On-Resistance (Normalized)
Vishay Siliconix
100
I
D
= 20 A
V
GS
= 10 V
10
I
S
-
Source
Current (A)
1.7
V
GS
= 6 V
T
J
= 150 °C
1
T
J
= 25 °C
1.4
1.1
0.1
0.8
0.01
0.5
- 50
0.001
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
0.030
Source Drain Diode Forward Voltage
0.7
0.025
R
DS(on)
- Resistance (Ω)
0.2
V
GS(th)
Variance (V)
0.020
- 0.3
I
D
= 5 mA
- 0.8
I
D
= 250 μA
- 1.3
0.015
0.010
T
J
= 150 °C
0.005
T
J
= 25 °C
0.000
0
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
- 1.8
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
54
I
D
= 10 mA
Threshold Voltage
V
DS
- Drain-to-Source Voltage (V)
52
50
48
46
44
42
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S13-0451-Rev. A, 04-Mar-13
Document Number: 62783
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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