THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQP120N06-06
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
c
SYMBOL
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
TEST CONDITIONS
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
DS
= 60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
≥
5 V
I
D
= 30 A
I
D
= 30 A, T
J
= 125 °C
I
D
= 30 A, T
J
= 175 °C
MIN.
60
2.5
-
-
-
-
120
-
-
-
-
-
TYP.
-
3.0
-
-
-
-
-
0.0045
-
-
94
5196
708
336
96.5
24.6
27.2
1
16
14
34
9
-
0.9
MAX.
-
3.5
± 100
1
50
250
-
0.0060
0.0104
0.0129
-
6495
885
420
145
-
-
1.7
24
21
51
14
480
1.5
UNIT
V
nA
μA
A
Ω
S
V
DS
= 15 V, I
D
= 30 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
pF
V
GS
= 10 V
V
DS
= 30 V, I
D
= 75 A
f = 1 MHz
-
-
0.3
-
-
-
-
-
nC
Ω
V
DD
= 30 V, R
L
= 0.4
Ω
I
D
≅
75 A, V
GEN
= 10 V, R
g
= 1
Ω
ns
Source-Drain Diode Ratings and Characteristics
b
A
V
I
F
= 75 A, V
GS
= 0
-
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1876-Rev. B, 10-Aug-15
Document Number: 62853
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQP120N06-06
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
225
200
175
I
D
- Drain Current (A)
150
125
100
75
50
25
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 5 V
0
0
2
4
V
GS
= 6 V
I
D
- Drain Current (A)
V
GS
= 10 V thru 7 V
120
150
Vishay Siliconix
90
60
T
C
= 25
°C
30
T
C
= 125
°C
T
C
= -55 °C
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
200
T
C
= -55 °C
1.2
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
160
T
C
= 25
°C
120
T
C
= 125
°C
80
0.9
0.6
T
C
= 25
°C
0.3
T
C
= 125
°C
0.0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
T
C
= -55 °C
40
0
0
14
28
42
56
70
I
D
- Drain Current (A)
Transfer Characteristics
Transconductance
0.020
10 000
0.016
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
8000
0.012
6000
C
iss
0.008
V
GS
= 10 V
0.004
4000
2000
C
oss
C
rss
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
0.000
0
20
40
60
80
100
120
I
D
- Drain Current (A)
0
On-Resistance vs. Drain Current
S15-1876-Rev. B, 10-Aug-15
Capacitance
Document Number: 62853
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQP120N06-06
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance(Normalized)
2.1
I
D
= 10 A
V
GS
= 10 V
Vishay Siliconix
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 110 A
V
DS
= 20 V
1.8
6
1.5
4
1.2
2
0.9
0
0
20
40
60
80
100
Q
g
- Total
Gate
Charge (nC)
0.6
-50
-25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.05
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
R
DS(on)
- On-Resistance (Ω)
0.04
0.03
0.1
T
J
= 25
°C
0.01
0.02
T
J
= 150
°C
0.01
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
V
SD
-
Source-to-Drain
Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
80
I
D
= 10 mA
V
DS
- Drain-to-Source Voltage (V)
0.2
77
V
GS(th)
Variance (V)
-0.2
I
D
= 5 mA
74
-0.6
71
-1.0
I
D
= 250 μA
-1.4
68
-1.8
-50
-25
0
25
50
75
100
125
150
175
65
-50
-25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
S15-1876-Rev. B, 10-Aug-15
Drain Source Breakdown vs. Junction Temperature
Document Number: 62853
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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