THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM110P06-8m9L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 μA
V
DS
= V
GS
, I
D
= - 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= - 10 V
V
GS
= - 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V
V
GS
= - 10 V
V
GS
= - 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= - 85 A, V
GS
= 0 V
V
DD
= - 30 V, R
L
= 0.27
I
D
- 110 A, V
GEN
= - 10 V, R
g
= 1
f = 1 MHz
V
GS
= - 10 V
V
DS
= - 30 V, I
D
= - 110 A
V
GS
= 0 V
V
DS
= - 25 V, f = 1 MHz
-
-
-
-
-
-
1.2
-
-
-
-
-
-
5953
750
583
130
25
33
2.6
15
15
71
48
-
- 0.95
7450
940
730
200
-
-
4
25
25
110
75
- 230
- 1.5
A
V
ns
nC
pF
g
fs
V
DS
= - 60 V
V
DS
= - 60 V, T
J
= 125 °C
V
DS
= - 60 V, T
J
= 175 °C
V
DS
-
5 V
I
D
= - 30 A
I
D
= - 30 A, T
J
= 125 °C
I
D
= - 30 A, T
J
= 175 °C
I
D
= - 20 A
- 60
- 1.5
-
-
-
-
- 100
-
-
-
-
-
-
- 2.0
-
-
-
-
-
0.0071
-
-
0.0105
71
-
- 2.5
± 100
-1
- 50
- 250
-
0.0089
0.0147
0.0189
0.0132
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= - 15 V, I
D
= - 30 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2482-Rev. A, 22-Oct-12
Document Number: 62784
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM110P06-8m9L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
200
V
GS
= 10 V thru 5 V
160
I
D
- Drain Current (A)
I
D
- Drain Current (A)
128
160
Vishay Siliconix
120
96
80
V
GS
= 4 V
64
T
C
= 25
°C
40
V
GS
= 3 V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
32
T
C
= 125
°C
0
0
2
T
C
= - 55
°C
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Output Characteristics
125
T
C
= - 55
°C
T
C
= 25
°C
75
T
C
= 125
°C
50
R
DS(on)
- On-Resistance (Ω)
0.025
Transfer Characteristics
100
g
fs
- Transconductance (S)
0.020
0.015
V
GS
= 4.5 V
0.010
25
0.005
V
GS
= 10 V
0
0
10
20
30
40
50
I
D
- Drain Current (A)
0.000
0
24
48
72
96
120
I
D
- Drain Current (A)
Transconductance
10 000
10
On-Resistance vs. Drain Current
I
D
= 110 A
V
GS
-
Gate-to-Source
Voltage (V)
8000
C - Capacitance (pF)
8
6000
C
iss
6
V
DS
= 30 V
4
4000
2000
C
oss
C
rss
0
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
2
0
0
30
60
90
120
150
Q
g
- Total
Gate
Charge (nC)
Capacitance
Gate Charge
S12-2482-Rev. A, 22-Oct-12
Document Number: 62784
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM110P06-8m9L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.1
R
DS(on)
- On-Resistance (Normalized)
I
D
= 30 A
1.8
V
GS
= 10 V
I
S
-
Source
Current (A)
10
T
J
= 150
°C
1
100
Vishay Siliconix
1.5
V
GS
= 4.5 V
1.2
0.1
T
J
= 25
°C
0.01
0.9
0.6
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
0.15
1.2
Source Drain Diode Forward Voltage
0.12
R
DS(on)
- On-Resistance (Ω)
V
GS(th)
Variance (V)
0.9
I
D
= 250 μA
0.09
0.6
I
D
= 5 mA
0.06
0.3
0.03
T
J
= 25
°C
0
2
4
T
J
= 150
°C
0.0
0.00
6
8
10
- 0.3
- 50 - 25
0
25
50
75
100
125
150
175
V
GS
-
Gate-to-Source
Voltage (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
- 60
I
D
= 1 mA
Threshold Voltage
V
DS
- Drain-to-Source Voltage (V)
- 63
- 66
- 69
- 72
- 75
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-2482-Rev. A, 22-Oct-12
Document Number: 62784
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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