THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM110N05-06L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Source-Drain Diode Ratings and
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
Characteristics
b
I
SM
V
SD
I
F
= 85 A, V
GS
= 0
-
-
-
0.9
443
1.5
A
V
V
DD
= 28 V, R
L
= 0.25
I
D
110 A, V
GEN
= 10 V, R
g
= 2.5
f = 1 MHz
V
GS
= 10 V
V
DS
= 28 V, I
D
= 110 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
0.62
-
-
-
-
3550
610
288
73
14.5
16.8
1.2
12
13
37
13
4440
765
360
110
-
-
1.85
18
20
56
20
ns
nC
pF
g
fs
V
DS
= 55 V
V
DS
= 55 V, T
J
= 125 °C
V
DS
= 55 V, T
J
= 175 °C
V
DS
5
V
I
D
= 30 A
I
D
= 30 A, T
J
= 125 °C
I
D
= 30 A, T
J
= 175 °C
I
D
= 20 A
55
1.5
-
-
-
-
120
-
-
-
-
-
-
2.0
-
-
-
-
-
0.0047
-
-
0.008
90
-
2.5
± 100
1.0
50
150
-
0.006
0.0105
0.0132
0.010
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 30 A
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2035-Rev. B, 17-Oct-11
2
Document Number: 68838
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM110N05-06L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
160
V
GS
= 10 V thru 6 V
V
GS
= 5 V
100
120
I
D
- Drain Current (A)
Vishay Siliconix
120
I
D
- Drain Current (A)
80
80
60
40
V
GS
= 4 V
40
T
C
= 25 °C
20
V
GS
= 3 V, 2 V
0
0
4
8
12
16
V
DS
- Drain-to-Source Voltage (V)
20
0
0
T
C
= 125 °C
T
C
= - 55 °C
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Output Characteristics
Transfer Characteristics
150
0.020
120
g
fs
- Transconductance (S)
R
DS(on)
- On-Resistance (Ω)
0.016
V
GS
= 4.5 V
0.012
90
T
C
= 25 °C
T
C
= - 55 °C
60
T
C
= 125 °C
30
0.008
V
GS
= 10 V
0.004
0
0
12
24
36
I
D
- Drain Current (A)
48
60
0
0
20
40
60
80
I
D
- Drain Current (A)
100
120
Transconductance
5000
On-Resistance vs. Drain Current
10
I
D
= 110 A
4000
C - Capacitance (pF)
C
iss
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 28 V
6
3000
2000
4
C
oss
1000
2
C
rss
0
0
5
10
20 25 30 35 40 45
V
DS
- Drain-to-Source Voltage (V)
15
50
55
0
0
10
20
30
40
50
60
Q
g
- Total
Gate
Charge (nC)
70
80
Capacitance
Gate Charge
S11-2035-Rev. B, 17-Oct-11
3
Document Number: 68838
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM110N05-06L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.5
R
DS(on)
- On-Resistance (Normalized)
Vishay Siliconix
100
I
D
= 30 A
2.1
I
S
-
Source
Current (A)
10
V
GS
= 10 V
T
J
= 150 °C
1
T
J
= 25 °C
0.1
1.7
1.3
0.9
0.01
0.5
- 50
0.001
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
On-Resistance vs. Junction Temperature
0.05
0.6
Source Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.04
V
GS(th)
Variance (V)
0.2
- 0.2
I
D
= 5 mA
- 0.6
0.03
0.02
- 1.0
I
D
= 250 μA
0.01
T
J
= 150 °C
- 1.4
T
J
= 25 °C
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
0
- 1.8
- 50
- 25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
175
On-Resistance vs. Gate-to-Source Voltage
75
I
D
= 10 mA
V
DS
- Drain-to-Source Voltage (V)
71
Threshold Voltage
67
63
59
55
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S11-2035-Rev. B, 17-Oct-11
4
Document Number: 68838
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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