RUS6010M6
High Efficiency Barrier Rectifier
Features
•
V
RRM
= 60V
I
F(AV)
= 10A
• HEBR
®
Technology
• Ultra-Low Forward Voltage Drop
• Low Power Loss and High Efficiency
• High Surge Capability
• Low Leakage Current
• Lead Free and Green Devices Available
Pin Description
3
3
1
2
2
1
PDFN4053
Applications
• Rectifiers in SMPS
• Free Wheeling Diode
• DC-DC Converters
1
3
2
High Efficiency Barrier Rectifier
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
RRM
①
V
R
①
V
R(RMS)
①
I
F(AV)
I
FSM
T
STG
T
J
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current, T
C
=130°C
Peak Forward Surge Current,8.3ms Half Sine Wave
Storage Temperature Range
Operating Junction Temperature Range
60
60
42
10
250
-55 to 150
-55 to 150
V
V
V
A
A
°C
°C
Mounted on Large Heat Sink
R
θJC
R
θJA
②
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
2.1
35
°C/W
°C/W
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
1
www.ruichips.com
RUS6010M6
Electrical Characteristics
(T
A
=25°C Unless Otherwise Noted)
RUS6010M6
Symbol
Static Characteristics
V
(BR)R
③
I
R
③
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
Reverse Leakage Current
I
R
=300µA
V
R
=60V, T
C
=25°C
V
R
=60V, T
C
=125°C
I
F
=2A, T
C
=25°C
60
100
300
5
0.31
0.38
0.44
0.4
0.34
0.41
0.47
0.44
V
µA
mA
V
V
V
V
V
F
③
Forward Voltage Drop
I
F
=5A, T
C
=25°C
I
F
=10A, T
C
=25°C
I
F
=10A, T
C
=125°C
Notes:
①For
T
A
> 25°C the derating of V
R
and I
F
has to be considered.
②Polymide
PCB, 2oz. Copper. Cathode pad dimensions 18.8mm x 14.4mm. Anode pad dimensions
5.6mm x 14.4mm.
③Pulse
test, pulse width≤300µs, duty cycle≤2%.
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
2
www.ruichips.com
RUS6010M6
Ordering and Marking Information
Device
RUS6010M6
Marking
S6010
Package
PDFN4053
Packaging Quantity Reel Size Tape width
Tape&Reel
3000
13''
16mm
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
3
www.ruichips.com
RUS6010M6
Typical Characteristics
I
FAV
– Average Forward Current (A)
C
J
- Junction Capacitance (pF)
30
25
20
15
Power Derating
10000
Junction Capacitance
F=1mHz
1000
DC
10
5
0
0
20
40
60
80
100
120
140
160
100
10
0.1
1
10
100
1000
T
C
- Case Temperature (°C)
V
R
– Reverse Voltage (V)
10
Forward Voltage
Reverse Current
10000
I
R
– Reverse Current (µA)
I
F
- Forward Current (A)
T
J
=125°C
T
J
=125°C
1
1000
T
J
=25°C
0.1
100
T
J
=25°C
10
0.01
0
0.2
0.4
0.6
0.8
0
10
20
30
40
50
60
V
F
- Forward Voltage (V)
V
R
- Reverse Voltage
Thermal Transient Impedance
ZthJC - Thermal Response (°C/W)
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
Single Pulse
0.01
R
θJC
=
2.1°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
4
www.ruichips.com
RUS6010M6
Package Information
D
b2
PDFN4053
A2
D2
L
E1
E
W
E2
L1
e
b1
b1
A
3.60
4.70
1.40
0.80
Land Pattern
( Only for Reference )
0.90
SYMBOL
A
A2
b1
b2
D
D2
E
e
E1
E2
L
L1
W
MM
MIN
1.10
0.20
0.80
1.70
3.85
*
6.30
*
5.20
3.40
0.65
0.50
1.10
NOM
1.20
0.25
0.90
1.80
3.95
3.05 TYP
6.40
1.84 TYP
5.30
3.50
0.80
0.60
1.30
MAX
1.30
0.30
1.00
1.90
4.05
*
6.50
*
5.40
3.60
0.95
0.70
1.50
5
3.87
6.60
INCH
MIN
0.043
0.008
0.031
0.067
0.152
*
0.248
*
0.205
0.134
0.026
0.020
0.043
NOM
0.047
0.010
0.035
0.071
0.156
0.12 TYP
0.252
0.072 TYP
0.209
0.138
0.031
0.024
0.051
MAX
0.051
0.012
0.039
0.075
0.159
*
0.256
*
0.213
0.142
0.037
0.028
0.059
www.ruichips.com
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
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