RUS4510L
High Efficiency Barrier Rectifier
Features
•
V
RRM
= 45V
I
F(AV)
= 10A
• HEBR
®
Technology
• Ultra-Low Forward Voltage Drop
• Low Power Loss and High Efficiency
• High Surge Capability
• Low Leakage Current
• Lead Free and Green Devices Available
Pin Description
4
2
1
3
TO252
Applications
• Rectifiers in SMPS
• Free Wheeling Diode
• DC-DC Converters
High Efficiency Barrier Rectifier
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
RRM
①
V
R
①
V
R(RMS)
①
I
F(AV)
I
FSM
T
STG
T
J
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current, T
C
=130°C
Peak Forward Surge Current,8.3ms Half Sine Wave
Storage Temperature Range
Operating Junction Temperature Range
45
45
32
10
150
-55 to 150
-55 to 150
V
V
V
A
A
°C
°C
Mounted on Large Heat Sink
R
θJC
R
θJA
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
2
100
°C/W
°C/W
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
1
www.ruichips.com
RUS4510L
Electrical Characteristics
(T
C
=25°C Unless Otherwise Noted)
RUS4510L
Symbol
Static Characteristics
V
(BR)R
②
I
R
②
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
Reverse Leakage Current
I
R
=300µA
V
R
=45V, T
C
=25°C
V
R
=45V, T
C
=125°C
I
F
=2A, T
C
=25°C
45
300
5
0.3
0.36
0.42
0.37
0.33
0.4
0.48
0.43
V
µA
mA
V
V
V
V
V
F
②
Forward Voltage Drop
I
F
=5A, T
C
=25°C
I
F
=10A, T
C
=25°C
I
F
=10A, T
C
=125°C
Notes:
①For
T
A
> 25°C the derating of V
R
and I
F
has to be considered.
②Pulse
test, pulse width≤300µs, duty cycle≤2%.
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
2
www.ruichips.com
℃
RUS4510L
Ordering and Marking Information
Device
RUS4510L
Marking
RUS4510L
Package
TO252
Packaging Quantity Reel Size Tape width
Tape&Reel
2500
13''
16mm
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
3
www.ruichips.com
℃
RUS4510L
Typical Characteristics
I
FAV
– Average Forward Current (A)
C
J
- Junction Capacitance (pF)
30
25
20
15
Power Derating
10000
Junction Capacitance
F=1mHz
1000
DC
10
5
0
0
20
40
60
80
100
120
140
160
100
10
0.1
1
10
100
1000
T
C
- Case Temperature (°C)
V
R
– Reverse Voltage (V)
10
Forward Voltage
Reverse Current
10000
I
R
– Reverse Current (µA)
I
F
- Forward Current (A)
T
J
=125°C
T
J
=125°C
1
1000
T
J
=25°C
0.1
100
T
J
=25°C
0.01
0
0.2
0.4
0.6
0.8
10
0
5
10
15
20
25
30
35
40
45
V
F
- Forward Voltage (V)
V
R
- Reverse Voltage
Thermal Transient Impedance
ZthJC - Thermal Response (°C/W)
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
Single Pulse
0.01
R
θJC
=
2°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
4
www.ruichips.com
℃
RUS4510L
Package Information
TO252
E
b3
L3
C
θ
1
D1
D
A1
H
E1
θ
1
L1
L4
θ
1
θ
L
e
b
L2
θ
2
A
SYMBOL
A
A1
b
b3
c
D
D1
E
E1
e
H
L
L1
L2
L3
L4
MIN
2.200
0.000
0.720
5.230
0.470
6.000
6.500
4.700
9.900
1.400
MM
NOM
2.290
0.785
5.345
0.525
6.100
5.30 REF
6.600
4.810
2.28 REF
10.100
1.550
2.743 REF
0.510 BSC
1.075
0.800
7°
7°
MAX
2.380
0.100
0.850
5.460
0.580
6.200
6.700
4.920
10.300
1.700
MIN
0.087
0.000
0.028
0.206
0.019
0.236
0.256
0.185
0.390
0.055
INCH
NOM
0.090
0.031
0.210
0.021
0.240
0.20 REF
0.260
0.189
0.09 REF
0.398
0.061
0.108 REF
0.020 BSC
0.042
0.031
7°
7°
MAX
0.094
0.004
0.033
0.215
0.023
0.244
0.264
0.194
0.406
0.067
θ
θ1
θ2
0.900
0.600
0°
5°
5°
1.250
1.000
8°
9°
9°
0.035
0.024
0°
5°
5°
0.049
0.039
8°
9°
9°
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
5
www.ruichips.com
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