UNISONIC TECHNOLOGIES CO., LTD
MMBT5088/MMBT5089
NPN GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
3
NPN SILICON TRANSISTOR
The devices are designed for low noise, high gain, general
purpose amplifier applications at collector currents from 1μA to
50mA.
2
1
SOT-23
(JEDEC TO-236)
ORDERING INFORMATION
Ordering Number
MMBT5088G-AE3-R
MMBT5089G-AE3-R
Pin Assignment: E: Emitter
B: Base
Package
SOT-23
SOT-23
C: Collector
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Note:
MARKING
UTC MMBT5088
1QG
UTC MMBT5089
1RG
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 7
QW-R206-033.C
MMBT5088/MMBT5089
PARAMETER
SYMBOL
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
RATINGS
UNIT
MMBT5088
30
Collector-Emitter voltage
V
CEO
V
MMBT5089
25
MMBT5088
35
Collector-Base voltage
V
CBO
V
MMBT5089
30
Emitter-base voltage
V
EBO
4.5
V
Collector current-continuous
I
C
100
mA
350
mW
Total Device Dissipation
P
D
Linear Derating Factor above T
A
= 25°C
2.8
mW/°C
Junction Temperature
T
J
125
°C
Operating Temperature
T
OPR
-40 ~ +150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These ratings are based on a maximum junction temperature of 150 degrees C.
3. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA
(T
A
=25°C, unless otherwise specified)
PARAMETER
Junction to Ambient
SYMBOL
JA
RATINGS
357
UNIT
°C/W
UNISONIC TECHNOLOGIES CO., Ltd
www.unisonic.com.tw
2 of 7
QW-R206-033.C
MMBT5088/MMBT5089
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage MMBT5088
(Note)
MMBT5089
MMBT5088
Collector-Base Breakdown Voltage
MMBT5089
MMBT5088
Collector Cut-Off Current
MMBT5089
Emitter Cutoff Current
ON CHARACTERISTICS
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
SYMBOL
BV
CEO
BV
CBO
I
CBO
I
EBO
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
TEST CONDITIONS MIN TYP MAX UNIT
I
C
=1.0mA, I
B
=0
I
C
=100A, I
E
=0
V
CB
=20V, I
E
=0
V
CB
=15V, I
E
=0
V
EB
=3.0V, I
C
=0
V
EB
=4.5V, I
C
=0
V
CE
=5.0V, I
C
=100A
h
FE
V
CE
=5.0V, I
C
=1.0mA
V
CE
=5.0V,
I
C
=10mA(Note)
I
C
=10mA, I
B
=1.0mA
I
C
=10mA, V
CE
=5.0V
V
CE
=5.0mA,
I
C
=500A, f=20MHz
V
CB
=5.0V, I
E
=0,
f=100kHz
V
EB
=0.5V, I
C
=0,
f=100kHz
V
CE
=5.0V, I
C
=1.0mA,
f=1.0kHz
V
CE
=5.0V, I
C
=100A,
R
S
=10k,
f=10kHz ~ 15.7kHz
300
400
350
450
300
400
30
25
35
30
50
50
50
100
900
1200
V
V
V
V
nA
nA
nA
nA
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Small-Signal Current Gain
Noise Figure
MMBT5088
MMBT5089
MMBT5088
MMBT5089
V
CE(SAT)
V
BE(ON)
f
T
C
CB
C
EB
h
FE
NF
0.5
0.8
50
4
10
350
450
1400
1800
3.0
2.0
V
V
MHz
pF
pF
dB
dB
Note: Pulse Test: Pulse Width300s, Duty Cycle2.0%.
UNISONIC TECHNOLOGIES CO., Ltd
www.unisonic.com.tw
3 of 7
QW-R206-033.C
MMBT5088/MMBT5089
TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Voltage, V
CE(sat)
(V)
125 C
V
CE
=5.0V
0.3
0.25
0.2
0.15
NPN SILICON TRANSISTOR
Typical Pulsed Current Gain, h
FE
1200
1000
800
600
400
200
Collector-Emitter Saturation
Voltage vs. Collector Current
β=10
25 C
-40 C
125 C
0.1
0.05
25 C
-40 C
1
10
100
0
0.01 0.03 0.1 0.3 1 3 10
Collector Current, I
C
(mA)
30 100
0.1
Collector Current, I
C
(mA)
Collector-Emitter Voltage, V
BE(sat)
(V)
10
Collector-Cutoff Current
vs Ambient Temperature
V
CB
=45V
Base-Emitter ON Voltage, V
BE(on)
(V)
5
4
3
Input and Output Capacitance vs
Reverse Bias Voltage
f=1.0MHz
1
2
1
-0.1
25
0
50
75
100
125
150
0
C
te
C
ob
4
8
12
16
20
Ambient Temperature, T
A
(℃)
Reverse Bias Voltage (V)
UNISONIC TECHNOLOGIES CO., Ltd
www.unisonic.com.tw
4 of 7
QW-R206-033.C
Power Dissipation, P
D
(mW)
Noise Figure, NF (dB)
Collector Voltage, V
CE
(V)
MMBT5088/MMBT5089
TYPICAL CHARACTERISTICS(Cont.)
UNISONIC TECHNOLOGIES CO., Ltd
Noise Figure, NF (dB)
Characteristics Relative To
Value At TA=25
www.unisonic.com.tw
Source Resistance, R
S
(Ω)
5 of 7
NPN SILICON TRANSISTOR
QW-R206-033.C
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
