UNISONIC TECHNOLOGIES CO., LTD
PZTA92/93
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
PNP SILICON TRANSISTOR
The UTC
PZTA92/93
are high voltage PNP transistors,
designed for telephone signal switching and for high voltage
amplifier.
FEATURES
* Collector-emitter voltage: V
CEO
=-300V (UTC PZTA92)
V
CEO
=-200V (UTC PZTA93)
* Complement to UTC PZTA42/43
* Collector power dissipation: P
C(MAX)
=1W
ORDERING INFORMATION
Ordering Number
PZTA92G-AA3-R
PZTA93G-AA3-R
Package
SOT-223
SOT-223
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
MARKING
PZTA92
PZTA93
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PZTA92/93
PARAMETER
SYMBOL
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
RATINGS
UNIT
PZTA92
-300
V
Collector-Base Voltage
V
CBO
PZTA93
-200
V
PZTA92
-300
V
Collector-Emitter Voltage
V
CEO
PZTA93
-200
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-500
mA
Collector Power Dissipation
Pc
1
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
MIN
-300
-200
-300
-200
-5
TYP
MAX
UNIT
V
V
V
V
V
μA
μA
μA
TEST CONDITIONS
PZTA92
Collector-Base Breakdown Voltage
BV
CBO
I
C
=-100μA, I
E
=0
PZTA93
PZTA92
Collector-Emitter Breakdown Voltage BV
CEO
I
C
=-1mA, I
B
=0
PZTA93
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=-100μA, I
C
=0
V
CB
=-200V, I
E
=0
PZTA92
Collector Cut-Off Current
I
CBO
V
CB
=-160V, I
E
=0
PZTA93
Emitter Cut-Off Current
I
EBO
V
EB
=-3V, I
C
=0
V
CE
=-10V, I
C
=-1mA
DC Current Gain (Note)
h
FE
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-30mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=-20mA, I
B
=-2mA
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
=-20mA, I
B
=-2mA
Current Gain Bandwidth Product
f
T
V
CE
=-20V,Ic=-10mA, f=100MHz
PZTA92
Collector Base Capacitance
C
CB
V
CB
=-20V, I
E
=0, f=1MHz
PZTA93
Note: Pulse test: P
W
<300μs,
Duty Cycle<2%, V
CE (SAT)
<200mV
(Class SIN)
-0.25
-0.25
-0.10
60
80
80
-0.5
-0.90
50
6
8
V
V
MHz
pF
pF
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TYPICAL CHARACTERISTICS
10
3
DC Current Gain
V
CE
=-10V
PNP SILICON TRANSISTOR
-10
4
I =10*I
C
B
Saturation Voltage
V
CE(SAT)
10
2
-10
3
V
BE(SAT)
10
1
-10
2
10
0
-10
0
-10
1
-10
2
-10
3
-10
4
-10
1
-10
0
Collector Current, I
C
(mA)
Capacitance
-10
2
-10
3
-10
1
Collector Current, I
C
(mA)
Active-Region Safe Operating Area
-10
4
10
2
-10
1
s
0 .1 m
ms
1.0
C
D
5W
1.
C
IB
10
1
C
CB
-10
1
MPSA93
n
tio
ita
lim
al
m °C
er 25
Th T
C
=
-10
1
625mW Thermal
limitation T
A
=25°C
bonding breakdown
limitation T
J
=150°C
MPSA92
-10
-1
-10
0
-10
1
-10
2
-10
0 0
-10
-10
1
-10
2
-10
3
Collector-Base Voltage, V
CB
(V)
Current Gain Bandwidth Product
V
CE
=-20V
f=100MHz
Collector-Emitter Voltage, V
CE
( V)
10
3
10
2
10
1 0
-10
-10
1
Collector Current, I
C
(mA)
-10
2
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PZTA92/93
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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