UNISONIC TECHNOLOGIES CO., LTD
PZT1816
HIGH CURRENT SWITCHIG
APPLICATIONS
FEATURES
1
NPN PLANAR TRANSISTOR
* Low collector-to-emitter saturation voltage
* Good linearity of h
FE
* Small and slim package facilitating compactness of sets.
* High f
T
* Fast switching speed
SOT-223
ORDERING INFORMATION
Ordering Number
PZT1816G-x-AA3-R
Package
SOT-223
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 5
QW-R207-025.B
PZT1816
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
V
CBO
V
CEO
V
EBO
NPN PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25C, unless otherwise specified)
RATINGS
UNIT
120
V
100
V
6
V
DC
4
A
Collector Current
I
C
PULSE(Note 2)
8
A
Power Dissipation
P
D
1
W
Junction Temperature
T
J
+150
C
Storage Temperature
T
STG
-40 ~ +150
C
Note1: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Note2:
Duty=1/2, Pw=20ms
ELECTRICAL CHARACTERISTICS
(T
A
=25C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
BE(SAT)
V
CE(SAT)
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
ob
t
ON
t
STG
t
F
TEST CONDITIONS
I
C
=10μA, I
E
=0
I
C
=1mA, R
B
=∞
I
E
=10μA, I
C
=0
I
C
= 2A, I
B
=0.2A
I
C
= 2A, I
B
=0.2A
V
CB
= 100 V, I
E
=0
V
EB
= 4V, I
C
=0
V
CE
= 5V, I
C
= 0.5A
V
CE
=5V, I
C
= 3A
V
CE
=10V, I
C
=0.5A
V
CB
=10V, I
E
=0A, f =1MHz
See test circuit
See test circuit
See test circuit
MIN
120
100
6
TYP
MAX UNIT
V
V
V
1.2
V
400
mV
1
μA
1
μA
400
MHz
pF
ns
ns
ns
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Turn-on Time
Storage Time
Fall Time
0.9
150
70
40
180
40
100
900
50
CLASSIFICATION of h
FE1
RANK
RANGE
R
100 - 200
S
140 - 280
T
200 - 400
Q
70 -140
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R207-025.B
PZT1816
TEST CIRCUIT
PW=20μS
Duty Cycle≒1%
INPUT
NPN PLANAR TRANSISTOR
I
B1
R
B
I
B2
50
V
R
+
100µ
-5V
Ic=10, I
B1
= -10, I
B2
=2A
Unit (resistance:Ω, capacitance: F)
+
470µ
50V
OUTPUT
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www.unisonic.com.tw
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QW-R207-025.B
PZT1816
TYPICAL CHARACTERISTICS
NPN PLANAR TRANSISTOR
Colletcor Current, Ic (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Colletcor Current, Ic (A)
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TYPICAL CHARACTERISTICS(Cont.)
NPN PLANAR TRANSISTOR
Collector to Emitter
Saturation Voltage, V
CE(SAT)
(mV)
Base to Emitter
Saturation Voltage, V
BE(SAT)
(V)
℃
25
℃
25
℃
-2 5
DC
(T O
p
A
=
2 5 e ra
℃
ti o
n
)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Dissipation, P
D
(W)
Collector Current, I
C
(A)
DC
io
at
er
Op
n
2
c=
(T
)
5
℃
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QW-R207-025.B
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