UNISONIC TECHNOLOGIES CO., LTD
MMDT8050S
NPN EPITAXIAL SILICON TRANSISTOR
LOW VCESAT NPN EPITAXIAL
PLANAR TRANSISTOR
DESCRIPTION
The UTC
MMDT8050S
is a Dual NPN epitaxial planar transistor. It
has low V
CE(sat)
performance, and the transistor elements are
independent, eliminating interference.
FEATURES
* Low V
CE(sat)
, V
CE(sat)
= 40mV (typ.) @ I
C
/ I
B
= 50mA / 2.5mA
* Transistor elements are independent, eliminating interference.
* Mounting cost and area can be cut in half.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
MMDT8050SG-AL6-R
Package
SOT-363
Pin Assignment
1
2
3
4
5
6
E1 B1 C2 E2 B2 C1
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R218-012.D
MMDT8050S
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current (DC)
I
C
700
mA
Collector Current (Pulse)
I
CP
1.5 (Note 2)
A
Power Dissipation
P
D
200 (total)
mW
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Single pulse, P
W
=10ms
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
MIN
30
20
5
TYP
MAX UNIT
V
V
V
1
uA
100
nA
400
SYMBOL
TEST CONDITIONS
BV
CBO
I
C
= 100μA, I
E
= 0
BV
CEO
I
C
= 1mA, I
B
= 0
BV
EBO
I
E
= 100μA, I
C
=0
I
CBO
V
CB
= 30V,I
E
= 0
I
EBO
V
EB
= 5V, I
C
= 0
h
FE1
V
CE
= 1V, I
C
= 1mA
DC Current Gain(note)
h
FE2
V
CE
= 1V, I
C
= 150 mA
h
FE3
V
CE
= 1V, I
C
= 500mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
V
CE
= 1V, I
C
= 10mA
Current Gain Bandwidth Product
f
T
V
CE
= 10V, I
C
= 50mA
Output Capacitance
Cob
V
CB
= 10V, I
E
= 0, f = 1MHz
Note: Pulse Test: Pulse Width
≤
380µs, Duty Cycle
≤
2%
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
100
120
40
0.5
1.2
1.0
100
9.0
V
V
V
MHz
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-012.D
MMDT8050S
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-012.D
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