UNISONIC TECHNOLOGIES CO., LTD
MMDT5551
HIGH VOLTAGE SWITCHING
TRANSISTOR
DESCRIPTION
DUAL TRANSISTOR
The UTC
MMDT5551
is a high voltage fast-switching dual
NPN transistor. It is characterized with high breakdown voltage,
high current gain and high switching speed.
FEATURES
* High Collector-Emitter Voltage: V
CEO
=160V
* High current gain
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
MMDT5551G-AL6-R
Package
SOT-363
Pin Assignment
1
2
3
4
5
6
E1 B1 C2 E2 B2 C1
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R218-022.C
MMDT5551
DUAL TRANSISTOR
ABSOLUATE MAXIUM RATINGS
(T
A
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
V
CBO
180
V
Collector -Emitter Voltage
V
CEO
160
V
Emitter -Base Voltage
V
EBO
6
V
DC Collector Current
I
C
600
mA
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
MIN
180
160
6
TYP
MAX
UNIT
V
V
V
nA
nA
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
V
CBO
I
C
=100A, I
E
=0
Collector-Emitter Breakdown Voltage
V
CEO
I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage
V
EBO
I
E
=10A, I
C
=0
Collector Cut-off Current
I
CBO
V
CB
=120V, I
E
=0
Emitter Cut-off Current
I
EBO
V
BE
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
DC Current Gain(note)
h
FE
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
=50mA, I
B
=5mA
Current Gain Bandwidth Product
f
T
V
CE
=10V, I
C
=10mA, f=100MHz
Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
I
C
=0.25mA, V
CE
=5V
Noise Figure
NF
R
S
=1k, f=10Hz ~ 15.7kHz
Note: Pulse test: P
W
< 300μs, Duty Cycle < 2%
50
50
80
80
80
160
400
0.15
0.2
1
1
300
6.0
8
V
V
MHz
pF
dB
100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R218-022.C
MMDT5551
DUAL TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R218-022.C
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
