UNISONIC TECHNOLOGIES CO., LTD
MMDT2222A
DUAL NPN SMALL SIGNAL
SURFACE MOUNT TRANSISTOR
DESCRIPTION
DUAL TRANSISTOR
The UTC
MMDT2222A
is a Dual NPN small signal surface mount
transistor. It’s suitable for low power amplification and switch.
FEATURES
* Suitable for Low Power Amplification and Switching
* Epitaxial Planar Die Construction
* Extremely-Small Surface Mount Package
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Package
SOT-363
C: Collector
Pin Assignment
1 2 3 4 5 6
E1 B1 C2 C1 B2 E2
Packing
Tape Reel
Note:
MMDT2222AG-AL6-R
Pin Assignment: E: Emitter
B: Base
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R218-016.B
MMDT2222A
DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
75
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current-Continuous
I
C
600
mA
Power Dissipation (Note 2)
P
D
200
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Maximum combined dissipation.
THERMAL DATA
(T
A
=25°C, unless otherwise specified.)
SYMBOL
θ
JA
RATINGS
625
UNIT
°C/W
PARAMETER
Junction to Ambient
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified.)
MIN TYP MAX UNIT
75
40
6.0
10
10
10
10
20
35
50
75
100
40
50
35
V
V
V
nA
μA
nA
nA
nA
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
(Note)
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10μA, I
E
=0
Collector-Emitter Breakdown Voltage V
(BR)CEO
I
C
=10mA, I
B
=0
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10μA, I
C
=0
V
CB
=60V, I
E
=0
Collector-Current
I
CBO
V
CB
=60V, I
E
=0, T
A
=150°C
Collector- Current
I
CEX
V
CE
=60V, V
EB(OFF)
=3.0V
Emitter- Current
I
EBO
V
EB
=3.0V, I
C
=0
Base- Current
I
BL
V
CE
=60V, V
EB(OFF)
=3.0V
ON CHARACTERISTICS
(Note)
I
C
=100µA, V
CE
=10V
I
C
=1.0mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
DC Current Gain
h
FE
I
C
=150mA, V
CE
=10V
I
C
=500mA, V
CE
=10V
I
C
=10mA, V
CE
=10V, T
A
=-55°C
I
C
=150mA, V
CE
=1.0V
I
C
=150mA, I
B
=15mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
=500mA, I
B
=50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
OBO
V
CB
=10V, f=1.0MHz, I
E
=0
Input Capacitance
C
IBO
V
EB
=0.5V, f=1.0MHz, I
C
=0
Current Gain-Bandwidth Product
f
T
V
CE
=20V, I
C
=20mA, f=100MHz
Noise Figure
NF
V
CE
=10V, I
C
=100μA, R
S
=1.0kΩ, f=1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
D
V
CC
=30V,I
C
=150mA,V
BE(OFF)
=-0.5V,
I
B1
=15mA
Rise Time
t
R
Storage Time
t
S
V
CC
=30V, I
C
=150mA, I
B1
=I
B2
=15mA
Fall Time
t
F
Note: Short duration pulse test used to minimize self-heating effect.
300
0.6
0.3
1.0
1.2
2.0
8
25
V
V
V
V
pF
pF
MHz
dB
ns
ns
ns
ns
300
4.0
10
25
225
60
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-016.B
MMDT2222A
DUAL TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-016.B
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