UNISONIC TECHNOLOGIES CO., LTD
MJE13009-P
SWITCHMODE SERIES NPN
SILICON POWER
TRANSISTORS
DESCRIPTION
The
MJE13009-P
is designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V switch mode applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
NPN SILICON TRANSISTOR
FEATURES
* V
CEO
400V and 300 V
* Reverse Bias SOA with Inductive Loads @ T
C
= 100°C
* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C
t
C
@ 8 A, 100°C is 120 ns (Typ).
* 700 V Blocking Capability
* SOA and Switching Applications Information.
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13009L-P-T3P-T
MJE13009G-P-T3P-T
MJE13009L-P-TA3-T
MJE13009G-P-TA3-T
Package
TO-3P
TO-220
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
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ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C)
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
V
CEO
400
V
Collector-Emitter Voltage (V
BE
=-1.5V)
V
CEV
700
V
Emitter Base Voltage
V
EBO
9
V
12
Continuous
I
C
A
Collector Current
Peak (Note 3)
I
CM
24
Continuous
I
B
6
Base Current
A
Peak (Note 3)
I
BM
12
18
Continuous
I
E
A
Emitter Current
Peak (Note 3)
I
EM
36
TO-220
2
Power Dissipation
W
TO-3P
80
P
D
TO-220
16
Derate above 25°C
mW/°C
TO-3P
640
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle
≤
10%
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-3P
TO-220
TO-3P
SYMBOL
θ
JA
θ
JC
RATINGS
54
21
4
1.55
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
(Note)
Collector- Emitter Sustaining Voltage
Collector Cutoff Current
V
CBO
=Rated Value
Emitter Cutoff Current
ON CHARACTERISTICS
(Note)
DC Current Gain
SYMBOL
V
CEO
I
CEV
I
EBO
h
FE1
h
FE 2
V
CE(SAT)
TEST CONDITIONS
I
C
= 10mA, I
B
= 0
V
BE(OFF)
= 1.5V
DC
V
BE(OFF)
= 1.5V
DC
, T
C
= 100°C
V
EB
= 9V
DC
, I
C
= 0
I
C
= 5A, V
CE
= 5V
I
C
= 8A, V
CE
= 5V
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 12A, I
B
= 3A
I
C
= 8A, I
B
= 1.6A, T
C
= 100°C
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 8A, I
B
= 1.6A, T
C
= 100°C
MIN
400
1
5
1
40
30
1
1.5
3
2
1.2
1.6
1.5
TYP
MAX UNIT
V
mA
mA
Current-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
BE(SAT)
V
V
V
V
V
V
V
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ELECTRICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
TEST CONDITIONS
DYNAMIC CHARACTERISTICS
Transition frequency
f
T
I
C
= 500mA, V
CE
= 10V, f = 1MHz
Output Capacitance
C
OB
V
CB
= 10V, I
E
= 0, f = 0.1MHz
SWITCHING CHARACTERISTICS
(Resistive Load, Table 1)
Delay Time
t
DLY
V
CC
= 125Vdc, I
C
= 8A
Rise Time
t
R
I
B1
= I
B2
= 1.6A, t
P
= 25μs
Storage Time
t
S
Duty Cycle
≤1%
Fall Time
t
F
Inductive Load, Clamped
(Table 1, Fig. 13)
Voltage Storage Time
t
S
I
C
=8A, V
CLAMP
=300V, I
B1
=1.6A
V
BE(OFF)
= 5V, T
C
= 100°C
Crossover Time
t
C
Note: Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%
MIN
4
TYP
MAX UNIT
MHz
pF
0.1
1
3
0.7
2.3
0.7
µs
µs
µs
µs
µs
µs
180
0.06
0.45
1.3
0.2
0.92
0.12
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MJE13009-P
+5V
V
CC
1N4933
0.001
µ
F
33
MJE210
L
MR826*
NPN SILICON TRANSISTOR
RESISTIVE SWITCHING
TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
TEST CIRCUITS
5V
P
W
DUTY CYCLE
≤
10%
t
R
, t
F
≤
10 ns
1k
68
1k
+5V
1N4933
33 1N4933
2N2222
R
B
I
B
I
C
V
CLAMP
*SELECTED FOR . 1 kV
V
CE
D.U.T.
2N2905
MJE200
51
5.1k
1k
0.02
µ
F
Note:
P
W
and V
CC
Adjusted for Desired I
C
R
B
Adjusted for Desired I
B1
270
47
1/2W
100
-V
BE(OFF)
CIRCUIT VALUES
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
GAP for 200μH/20A
L
COIL
= 200μH
V
CC
= 20V
V
CLAMP
= 300V
DC
V
CC
= 125V
R
C
= 15Ω
D1 = 1N5820 or Equiv.
R
B
=
Ω
+10V
25µs
TEST WAVEFORMS
0
-8V
t
R
, t
F
< 10 ns
Duty Cycle = 1.0%
R
B
and R
C
adjusted
for desired I
B
and I
C
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CIRCUIT
24A
NPN SILICON TRANSISTOR
LOAD LINE DIAGRAMS
TURN–ON (FORWARD BIAS) SOA
t
ON
≤
10 ms
DUTY CYCLE
≤
10%
P
D
= 4000 W 2
350V
12A
TURN–ON
TURN–OFF (REVERSE BIAS) SOA
1.5 V
≤
V
BE(OFF)
≤
9.0 V
DUTY CYCLE
≤
10%
TABLE 2. APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS
TIME DIAGRAMS
SERIES SWITCHING
REGULATOR
T
C
= 100°C
V
CC
V
OUT
+
TURN–OFF
V
CC
400V 1
700V
1
COLLECTOR VOLTAGE
RINGING CHOKE
INVERTER
24A
TURN–ON (FORWARD BIAS) SOA
t
ON
≤
10 ms
DUTY CYCLE
≤
10%
P
D
= 4000 W 2
350V
TURN–OFF (REVERSE BIAS) SOA
1.5 V
≤
V
BE(off)
≤
9.0 V
DUTY CYCLE
≤
10%
I
C
V
CC
N
V
OUT
T
C
= 100 C
12A
t
OFF
t
ON
V
CE
V
CC+
N(V
O
)
V
CC
t
LEAKAGE SPIKE
TURN–OFF
TURN–ON
+ V
CC
V
CC
+N(V
OUT)
PUSH–PULL
INVERTER/CONVERTER
400V 1
700V
1
t
COLLECTOR VOLTAGE
V
OUT
V
CC
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