UNISONIC TECHNOLOGIES CO., LTD
MJE13003K
NPN SILICON POWER
TRANSISTOR
DESCRIPTION
These devices are designed for high–voltage, high–speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V SWITCHMODE.
NPN SILICON TRANSISTOR
FEATURES
* Reverse biased SOA with inductive load @ Tc=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tc = 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Lead Free
MJE13003KL-x-x-T60-K
MJE13003KL-x-x-T6C-A-K
MJE13003KL-x-x-T6C-F-K
MJE13003KL-x-x-T92-B
MJE13003KL-x-x-T92-K
MJE13003KL-x-x-T92-R
MJE13003KL-x-x-T9L-B
MJE13003KL-x-x-T9L-K
MJE13003KL-x-x-T9L-R
MJE13003KL-x-x-TM3-T
MJE13003KL-x-x-TN3-R
MJE13003KL-x-x-TN3-T
Halogen-Free
MJE13003KG-x-x-T60-K
MJE13003KG-x-x-T6C-A-K
MJE13003KG-x-x-T6C-F-K
MJE13003KG-x-x-T92-B
MJE13003KG-x-x-T92-K
MJE13003KG-x-x-T92-R
MJE13003KG-x-x-T9L-B
MJE13003KG-x-x-T9L-K
MJE13003KG-x-x-T9L-R
MJE13003KG-x-x-TM3-T
MJE13003KG-x-x-TN3-R
MJE13003KG-x-x-TN3-T
Package
TO-126
TO-126C
TO-126C
TO-92
TO-92
TO-92
TO-92L
TO-92L
TO-92L
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
E
C
B
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
B
C
E
B
C
E
B
C
E
Packing
Bulk
Bulk
Bulk
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
Tape Reel
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R223-006.A
MJE13003K
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
SYMBOL
V
CEO(SUS)
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
NPN SILICON TRANSISTOR
RATINGS
UNIT
400
V
700
V
9
V
Continuous
1.5
Collector Current
A
Peak (1)
3
Continuous
0.75
Base Current
A
Peak (1)
1.5
Continuous
2.25
Emitter Current
A
Peak (1)
4.5
TO-126/ TO-126C
1.4
W
Total Power Dissipation (Ta=25°C)
P
D
TO-92/ TO-92L
1.1
W
Total Power Dissipation (T
C
=25°C)
TO-252/ TO-251
25
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R223-006,A
MJE13003K
PARAMETER
OFF CHARACTERISTICS (Note)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
T
C
=25°C
T
C
=100°C
SYMBOL
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified.)
TEST CONDITIONS
I
C
=10 mA , I
B
=0
V
CEO
=Rated Value,
V
BE(OFF)
=1.5 V
V
EB
=9 V, I
C
=0
MIN TYP MAX UNIT
400
1
5
1
See Figure 5
See Figure 6
8
5
51
30
0.5
1
3
1
1
1.2
1.1
10
21
V
mA
mA
I
CEO
I
EBO
Is/b
RB
SOA
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current with bass
forward biased
Clamped Inductive SOA with base reverse biased
ON CHARACTERISTICS (Note)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Fall Time
Note: Pulse Test : PW=300μs, Duty Cycle≤2%
I
C
=0.5A, V
CE
=5V
I
C
=1A, V
CE
=2V
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
V
CE(SAT
)
I
C
=1.5A, I
B
=0.5A
I
C
=1A, I
B
=0.25A, T
C
=100°C
I
C
=0.5A, I
B
=0.1A
V
BE(SAT)
I
C
=1A, I
B
=0.25A
I
C
=1A, I
B
=0.25A, T
C
=100°C
f
T
Cob
I
C
=100mA, V
CE
=10V, f=1MHz
V
CB
=10V, I
E
=0, f=0.1MHz
h
FE1
h
FE2
V
V
4
MHz
pF
t
D
t
R
t
S
t
F
t
STG
t
C
t
F
V
CC
=125V, I
C
=1A, I
B1
=I
B2
=0.2A,
t
P
=25μs, Duty Cycle≤1%
0.05 0.1
0.5
1
2
4
0.4 0.7
1.7
4
0.29 0.75
0.15
μs
μs
μs
μs
μs
μs
μs
I
C
=1A, Vclamp=300V, I
B1
=0.2A,
V
BE(OFF)
=5Vdc, T
C
=100°C
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R223-006,A
MJE13003K
CLASSIFICATION OF h
FE1
RANK
RANGE
A
8 ~ 16
B
15 ~ 21
C
20 ~ 26
D
25 ~ 31
NPN SILICON TRANSISTOR
E
30 ~ 36
F
35 ~ 40
G
40 ~ 46
H
45 ~ 51
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
+5V
1N4933
0.001μF
33
MJE210
L
MR826*
Vcc
Resistive
Switching
Test Circuits
5V
P
w
DUTY CYCLE≦10%
t
R
, t
F
≦10ns
68
1k
33 1N4933
2N2222
1k
+5V
1N4933
0.02μF
270
1k
2N2905
47
1/2W
MJE200
100
-V
BE
(
OFF
)
R
B
I
B
T.U.T.
Ic
5.1k
51
V
clamp
*SELECTED FOR≣1kV
V
CE
+125V
Rc
TUT
R
B
D1
-4.0V
SCOPE
NOTE
P
W
and Vcc Adjusted for Desired Ic
R
B
Adjusted for Desired I
B1
Circuit Values
Coil Data :
V
CC
=20V
Ferroxcube core #6656
Vclamp=300V
Full Bobbin ( ~ 200 Turns) #20
GAP for 30 mH/2 A
Lcoil=50mH
V
CC
=125V
R
C
=125Ω
D1=1N5820 or
Equiv.
R
C
=47Ω
Output Waveforms
Test Waveforms
Ic
Ic(pk)
t1
tf
tf CLAMPED
t
t1 Adjusted to
Obtain Ic
t1≒
V
CE
or
Vclamp
Lcoil(Icpk)
Vcc
Test Equipment
Scope-Tektronics
475 or Equivalent
+10.3 V
25μS
0
-8.5V
tr, tf<10ns
Duty Cycly=1.0%
R
B
and Rc adjusted
for desired I
B
and Ic
V
CE
TIME
t2
t
Lcoil(Icpk)
t2≒ Vclamp
Figure 1. Inductive Switching Measurements
I
CPK
90% V
clamp
I
C
t
sv
t
RV
t
c
V
CE
I
B
90% I
B1
10% V
clamp
10%
Icpk 2% Ic
V
clamp
90% Ic
t
FI
t
TI
Table 2. Typical Inductive Switching Performance
Ic
AMP
Tc
°C
25
100
25
100
25
100
t
sv
µs
1.3
1.6
1.5
1.7
1.8
3
t
RV
µs
0.23
0.26
0.10
0.13
0.07
0.08
t
FI
µs
0.30
0.30
0.14
0.26
0.10
0.22
t
TI
µs
0.35
0.40
0.05
0.06
0.05
0.08
t
c
µs
0.30
0.36
0.16
0.29
0.16
0.28
0.5
1
1.5
Time
NOTE: All Data Recorded in the Inductive Switching
Circuit in Table 1
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QW-R223-006,A
MJE13003K
SWITCHING TIMES NOTE
NPN SILICON TRANSISTOR
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive loads, which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total switching time. For this reason, the following new terms
have been defined.
t
SV
= Voltage Storage Time, 90% I
B1
to 10% Vclamp
t
RV
= Voltage Rise Time, 10 ~ 90% Vclamp
t
FI
= Current Fall Time, 90 ~ 10% I
C
t
TI
= Current Tail, 10 ~ 2% I
C
t
C
= Crossover Time, 10% Vclamp to 10% I
C
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
PSWT = 1/2 V
CC
I
C
(t
C
) f
In general, t
RV
+ t
FI
≈
t
C
. However, at lower test currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25°C and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (t
C
and t
SV
) which
are guaranteed at 100°C.
RESISTIVE SWITCHING PERFORMANCE
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