UNISONIC TECHNOLOGIES CO., LTD
MMDT2907A
NPN & PNP GENERAL
PURPOSE AMPLIFIER
DESCRIPTION
Preliminary
DUAL TRANSISTOR
The UTC
MMDT2907A
is an NPN & PNP general purpose
amplifier. it’s suitable for a medium power amplifier and switch
requiring collector currents up to 500mA.
FEATURES
* Low V
CE(SAT
* High collector current gain under high collector current condition
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
MMDT2907AG-AL6-R
Package
SOT-363
1
E1
Pin Assignment
2
3
4
5
B1 C2 E2 B2
6
C1
Packing
Tape Reel
MMDT2907AG-AL6-R
(1)Packing Type
(2)Package Type
(3)Green Package
(1) R: Tape Reel
(2) AL6: SOT-363
(3) G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R218-028.b
MMDT2907A
PARAMETER
Preliminary
DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise noted) (Note 1, 2)
SYMBOL
RATINGS
UNIT
TR1
30
V
Collector-Emitter Voltage
V
CEO
TR2
-30
V
TR1
60
V
Collector-Base Voltage
V
CBO
TR2
-60
V
TR1
5.0
V
Emitter-Base Voltage
V
EBO
TR2
-5.0
V
TR1
500
mA
Collector Current - Continuous
I
C
TR2
-500
mA
300
mW
Total Device Dissipation
P
D
Derate above 25°C
2.4
mW/°C
Junction Temperature
T
J
-55~+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
THERMAL DATA
(T
A
=25°C, unless otherwise noted)
SYMBOL
θ
JA
RATINGS
415
UNIT
°C/W
PARAMETER
Thermal Resistance, Junction to Ambient
TR1
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise noted) (Note 2)
MIN
30
60
5.0
30
30
50
75
100
30
0.4
1.4
1.3
250
4.0
12
2.0
V
V
V
MHz
pF
pF
dB
TYP MAX UNIT
V
V
V
nA
nA
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1) V
(BR)CEO
I
C
=10mA, I
B
=0
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10µA, I
E
=0
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10µA, I
C
=0
Collector Cutoff Current
I
CBO
V
CB
=50V, I
E
=0
Emitter Cutoff Current
I
EBO
V
EB
=3.0V, I
C
=0
ON CHARACTERISTICS
I
C
=1.0mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
DC Current Gain
h
FE
I
C
=150mA, V
CE
=10V (Note 1)
I
C
=300mA, V
CE
=10V (Note 1)
I
C
=150mA, I
B
=15mA
Collector-Emitter Saturation Voltage (Note 1)
V
CE(sat)
I
C
=300mA, I
B
=30mA
Base-Emitter Saturation Voltage (Note 1)
V
BE(sat)
I
C
=150mA, I
B
=15mA
SMALL SIGNAL CHARACTERISTICS
I
C
=50mA, V
CE
=20V,
Current Gain - Bandwidth Product
f
T
f=100MHz
Output Capacitance
C
OBO
V
CB
=10V, I
E
=0, f=100kHz
Input Capacitance
C
IBO
V
EB
=2.0V, I
C
=0, f=100kHz
I
C
=100µA, V
CE
=10V,
Noise Figure
NF
R
S
=1.0kΩ, f=1.0kHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R218-028.b
MMDT2907A
Preliminary
DUAL TRANSISTOR
ELECTRICAL CHARACTERISTICS(Cont.)
MIN
TYP MAX UNIT
30
8.0
20
80
60
20
ns
ns
ns
ns
ns
ns
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Turn-on Time
t
ON
V
CC
=30V, I
C
=150mA,
Delay Time
t
D
I
B1
=15mA
Rise Time
t
R
Turn-off Time
t
OFF
V
CC
=6.0V, I
C
=150mA,
Storage Time
t
S
I
B1
=I
B2
=15mA
Fall Time
t
F
Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%
2. All voltages (V) and currents (A) are negative polarity for PNP transistors.
TR2
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1) V
(BR)CEO
I
C
=-10mA, I
B
=0
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10µA, I
E
=0
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10µA, I
C
=0
Collector Cutoff Current
I
CBO
V
CB
=-50V, I
E
=0
Emitter Cutoff Current
I
EBO
V
EB
=-3.0V, I
C
=0
ON CHARACTERISTICS
I
C
=-1.0mA, V
CE
=-10V
I
C
=-10mA, V
CE
=-10V
DC Current Gain
h
FE
I
C
=-150mA, V
CE
=-10V (Note 1)
I
C
=-300mA, V
CE
=-10V (Note 1)
I
C
=-150mA, I
B
=-15mA
Collector-Emitter Saturation Voltage (Note 1)
V
CE(sat)
I
C
=-300mA, I
B
=-30mA
Base-Emitter Saturation Voltage (Note 1)
V
BE(sat)
I
C
=-150mA, I
B
=-15mA
SMALL SIGNAL CHARACTERISTICS
I
C
=-50mA, V
CE
=-20V,
Current Gain - Bandwidth Product
f
T
f=100MHz
Output Capacitance
C
OBO
V
CB
=-10V, I
E
=0, f=100kHz
Input Capacitance
C
IBO
V
EB
=-2.0V, I
C
=0, f=100kHz
I
C
=-100µA, V
CE
=-10V,
Noise Figure
NF
R
S
=1.0kΩ, f=1.0kHz
SWITCHING CHARACTERISTICS
Turn-on Time
t
ON
V
CC
=-30V, I
C
=-150mA,
Delay Time
t
D
I
B1
=-15mA
Rise Time
t
R
Turn-off Time
t
OFF
V
CC
=6.0V, I
C
=-150mA,
Storage Time
t
S
I
B1
=I
B2
=-15mA
Fall Time
t
F
Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%
2. All voltages (V) and currents (A) are negative polarity for PNP transistors.
MIN
-30
-60
-5.0
TYP MAX UNIT
V
V
V
nA
nA
-30
-30
50
75
100
30
-0.4
-1.4
-1.3
250
4.0
12
2.0
30
8.0
20
80
60
20
V
V
V
MHz
pF
pF
dB
ns
ns
ns
ns
ns
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R218-028.b
MMDT2907A
Preliminary
DUAL TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-028.b
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