UNISONIC TECHNOLOGIES CO., LTD
MJE13007-P
Preliminary
NPN SILICON TRANSISTOR
NPN BIPOLAR POWER
TRANSISTOR FOR SWITCHING
POWER SUPPLY
APPLICATIONS
DESCRIPTION
The UTC
MJE13007-P
is designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. It is
particularly suited for 115 and 220 V switch mode applications.
FEATURES
* V
CEO(SUS)
400V
* 700V Blocking Capability
ORDERING INFORMATION
Ordering Number
Halogen Free
MJE13007G-P-TA3-T
C: Collector
E: Emitter
(1)Packing Type
(2)Package Type
(3)Lead Free
Package
TO-220
Pin Assignment
1
2
3
B
C
E
Packing
Tube
Lead Free
MJE13007L-P-TA3-T
Note: Pin Assignment: B: Base
MJE13007L-P-TA3-T
(1)T: Tube
(2) TA3: TO-220
(3) L: Lead Free, G: Halogen Free
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Copyright © 2013 Unisonic Technologies Co., Ltd
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MJE13007-P
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Voltage
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
SYMBOL
RATINGS
UNIT
V
CEO
400
V
V
CBO
700
V
V
EBO
9.0
V
Continuous
I
C
8.0
A
Collector Current
Peak (1)
I
CM
16
A
Continuous
I
B
4.0
A
Base Current
Peak (1)
I
BM
8.0
A
Continuous
I
E
12
A
Emitter Current
Peak (1)
I
EM
24
A
Power Dissipation (T
C
= 25°C)
P
D
80
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
θ
JA
62.5
°C/W
Junction to Ambient
θ
JC
1.56
°C/W
Junction to Case
Note: 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%.
Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in
a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting
torque of 6 to 8•lbs.
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
SYMBOL
V
CEO(SUS)
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
TEST CONDITIONS
I
C
=10mA, I
B
=0
V
CES
=700V
V
CES
=700V, T
C
=125°C
V
EB
=9.0V, I
C
=0
I
C
=2.0A, V
CE
=5.0V
I
C
=5.0A, V
CE
=5.0V
I
C
=2.0A, I
B
=0.4A
I
C
=5.0A, I
B
=1.0A
I
C
=8.0A, I
B
=2.0A
I
C
=5.0A, I
B
=1.0A, T
C
=100°C
I
C
=2.0A, I
B
=0.4A
I
C
=5.0A, I
B
=1.0A
I
C
=5.0A, I
B
=1.0A, T
C
=100°C
I
C
=500mA, V
CE
=10V, f=1.0 MHz
V
CB
=10V, I
E
=0, f=0.1MHz
MIN
400
TYP
MAX UNIT
V
0.1
mA
1.0
mA
100
μA
40
30
1.0
V
2.0
V
3.0
V
3.0
V
1.2
V
1.6
V
1.5
V
MHz
pF
0.1
1.5
4.0
0.7
μs
μs
μs
μs
PARAMETER
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
8.0
5.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
BE(SAT)
Current-Gain-Bandwidth Product
f
T
Output Capacitance
C
OB
RESISTIVE LOAD (TABLE 1)
Delay Time
t
D
V
CC
=125V, I
C
=5.0A,
Rise Time
t
R
I
B1
=I
B2
=1.0A, t
P
=25μs,
Storage Time
t
S
Duty Cycle≤1.0%
Fall Time
t
F
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
4.0
14
80
0.025
0.5
1.8
0.23
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJE13007-P
Preliminary
NPN SILICON TRANSISTOR
TYPICAL THERMAL RESPONSE
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
-V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Fig. 7 is based on T
C
= 25°C; T
J(PK)
is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be debated when T
C
≥25°C.
Second breakdown limitations do not
debate the same as thermal limitations. Allowable current at the voltages shown on Fig. 7 may be found at any case
temperature by using the appropriate curve on Fig. 9.
At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Use of reverse biased safe operating area data (Fig. 8) is discussed in the applications information section.
Transient thermal resistance,
r(t) (NORMALIZED)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJE13007-P
Preliminary
NPN SILICON TRANSISTOR
TYPICAL THERMAL RESPONSE(Cont.)
Table 1. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE
SWITCHING
CIRCUIT VALUES
TEST CIRCUITS
V
CC
=125V
R
C
=25Ω
D1=1N5820 OR EQUIV
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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