UNISONIC TECHNOLOGIES CO., LTD
MJE13005-K
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
NPN SILICON TRANSISTOR
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.
FEATURES
* V
CEO(SUS)
= 400 V
* Reverse bias SOA with inductive loads @ T
C
= 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
t
C
@ 3A, 100°С is 180 ns (Typ)
* 700V blocking capability
* SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Package
TO-220
TO-220F
TO-251
TO-251S4
TO-252
TO-126
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
Tube
Tape Reel
Bulk
Lead Free
Halogen Free
MJE13005L-K-x-TA3-T
MJE13005G-K-x-TA3-T
MJE13005L-K-x-TF3-T
MJE13005G-K-x-TF3-T
MJE13005L-K-x-TM3-T
MJE13005G-K-x-TM3-T
MJE13005L-K-x-TMS4-T
MJE13005G-K-x-TMS4-T
MJE13005L-K-x-TN3-R
MJE13005G-K-x-TN3-R
MJE13005L-K-x-T60-R
MJE13005G-K-x-T60-K
Note: Pin Assignment: B: Base C: Collector
E: Emitter
MJE13005L-K-x-TA3-T
(1)Packing Type
(2)Package Type
(3)Rank
(4)Green Package
(1)T: Tube, R: Tape Reel, K: Bulk
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
(2)
TMS4: TO-251S4, TN3: TO-252, T60: TO-126
(3) x: refer to Classification of h
FE1
(4) L: Lead Free, G: Halogen Free and Lead Free
MARKING
TO-220 / TO-220F / TO-251
TO-251S4 / TO-252
TO-126
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Copyright © 2015 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
V
CEO(SUS)
400
V
Collector-Emitter Voltage (V
BE
=0)
V
CES
700
V
Collector-Base Voltage
V
CBO
700
V
Emitter Base Voltage
V
EBO
9
V
Continuous
I
C
4
A
Collector Current
Peak (1)
I
CM
8
A
Continuous
I
B
2
A
Base Current
Peak (1)
I
BM
4
A
Continuous
I
E
6
A
Emitter Current
Peak (1)
I
EM
12
A
TO-220
75
TO-220F
40
Power Dissipation at T
C
=25°С
W
TO-251/TO-251S4
50
TO-252
TO-126
20
P
D
TO-220
600
TO-220F
320
Derate above 25°С
mW/°С
TO-251/TO-251S4
400
TO-252
TO-126
160
Operating and Storage Junction Temperature
T
J
, T
STG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
θ
JA
RATINGS
62.5
80
89
1.67
3.125
θ
JC
2.5
6.25
°С/W
UNIT
°С/W
PARAMETER
TO-220/TO-220F
TO-251/TO-251S4
TO-252
TO-126
Junction to Ambient
TO-220
Junction to Case
TO-220F
TO-251/TO-251S4
TO-252
TO-126
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PARAMETER
OFF CHARACTERISTICS
(Note 1)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased
Clamped Inductive SOA with Base
Reverse Biased
ON CHARACTERISTICS
(Note 1)
DC Current Gain
SYMBOL
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
TEST CONDITIONS
MIN
400
1
mA
5
1
See Fig. 11
See Fig. 12
I
C
=0.5A, V
CE
=5V
I
C
=1A, V
CE
=5V
I
C
=2A, V
CE
=5V
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
I
C
=4A, I
B
=1A
I
C
=2A, I
B
=0.5A, Ta=100°С
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
I
C
=2A, I
B
=0.5A, T
C
=100°С
15
10
8
50
60
40
0.5
0.6
1
1
1.2
1.6
1.5
mA
TYP
MAX
UNIT
V
V
CEO(SUS)
I
C
=10mA , I
B
=0
V
CBO
=Rated Value,
V
BE(OFF)
=1.5V
I
CBO
V
CBO
=Rated Value,
V
BE(OFF)
=1.5V, T
C
=100°С
I
EBO
V
EB
=9V, I
C
=0
I
S/B
RBSOA
h
FE1
h
FE2
h
FE3
V
CE(SAT)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
BE (SAT)
V
V
V
V
V
V
V
MHz
pF
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
f
T
I
C
=500mA, V
CE
=10V, f=1MHz
Output Capacitance
C
OB
V
CB
=10V, I
E
=0, f=0.1MHz
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
t
D
Rise Time
t
R
V
CC
=125V, I
C
=2A, I
B1
=I
B2
=0.4A,
t
P
=25μs, Duty Cycle≤1%
Storage Time
t
S
Fall Time
t
F
Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Note:
2. Pulse Test: P
W
=300μs, Duty Cycle≤2%
4
65
0.025
0.3
1.7
0.4
0.1
0.7
4
0.9
μs
μs
μs
μs
CLASSIFICATION OF h
FE1
RANK
RANGE
A
15 ~ 20
B
20 ~ 25
C
25 ~ 30
D
30 ~ 40
E
40 ~ 50
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NPN SILICON TRANSISTOR
APPLICATION INFORMATION
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
Resistive
Switching
+5V
1N4933
0.001μF
33
MJE210
V
cc
L
MR826*
Vclamp
*SELECTED FOR≧1kV
V
CE
R
B
D1
-4.0V
+125V
R
c
TUT
SCOPE
Test Circuits
5V
P
w
DUTY CYCLE≦10%
t
r
, t
f
≦10ns
68
1k
33 1N4933
2N2222
1k
+5V
1N4933
0.02μF 270
1k
2N2905
47
1/2W
MJE200
100
-V
BE
(off)
R
B
I
B
T.U.T.
I
c
5.1k
51
Note:
P
W
and V
cc
Adjusted for Desired I
c
R
B
Adjusted for Desired I
B1
Circuit Values
Coil Data :
V
CC
=20V
FERROXCUBE core #6656
Full Bobbin ( ~ 16 Turns) #16
GAP for 200μH/20 A
L
COIL
=200μH
V
CLAMP
=300V
V
CC
=125V
R
C
=62Ω
D1=1n5820 or
Equiv.
RB=22Ω
OUTPUT WAVEFORMS
t
F
CLAMPED
Test Waveforms
I
C
I
C(PK)
t
1
t
f
t
F
UNCLAMPED
t
t
2
t
1
Adjusted to
Obtain Ic
t
1
=
L
COIL
(I
CPK
)
V
CC
L
COIL
(I
CPK
)
V
CLAMP
Test Equipment
Scope-Tektronics
475 or Equivalent
V
CE
V
CE
or
V
CLAMP
TIME
t
2
t
t
2
=
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MJE13005-K
RESISTIVE SWITCHING PERFORMANCE
NPN SILICON TRANSISTOR
Time, t (°С)
Transient Thermal Resistance, r(t)
(Normalized)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Current, I
C(PK)
(A)
Collector Current, I
C
(A)
Time, t (°С)
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