UNISONIC TECHNOLOGIES CO., LTD
MJE13005-H
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
NPN SILICON TRANSISTOR
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.
FEATURES
* V
CEO(SUS)
= 400 V
* Reverse bias SOA with inductive loads @ T
C
= 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
t
C
@ 3A, 100°С is 180 ns (Typ)
* 700V blocking capability
* SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Halogen-Free
MJE13005G-H-x-T92-B
MJE13005G-H-x-T92-K
B: Base
C: Collector
Package
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Box
Bulk
Lead Free
MJE13005L-H-x-T92-B
MJE13005-L-H-x-T92-K
Note: Pin assignment: E: Emitter
MARKING
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ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CEO(SUS)
V
CES
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage (V
BE
=0)
Collector-Base Voltage
Emitter Base Voltage
NPN SILICON TRANSISTOR
RATINGS
UNIT
400
V
900
V
900
V
9
V
Continuous
4
A
Collector Current
Peak (1)
8
A
Continuous
2
A
Base Current
Peak (1)
4
A
Continuous
6
A
Emitter Current
Peak (1)
12
A
0.8
W
Power Dissipation at T
A
=25°С
P
D
Derate above 25°С
6.4
mW/°С
Operating and Storage Junction Temperature
T
J
, T
STG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
150
45
UNIT
°С/W
°С/W
PARAMETER
Junction to Ambient
Junction to Case
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PARAMETER
OFF CHARACTERISTICS
(Note 1)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased
Clamped Inductive SOA with Base
Reverse Biased
ON CHARACTERISTICS
(Note 1)
DC Current Gain
SYMBOL
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
TEST CONDITIONS
MIN
400
1
mA
5
1
See Fig. 11
See Fig. 12
I
C
=0.5A, V
CE
=5V
I
C
=1A, V
CE
=5V
I
C
=2A, V
CE
=5V
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
I
C
=4A, I
B
=1A
I
C
=2A, I
B
=0.5A, Ta=100°С
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
I
C
=2A, I
B
=0.5A, T
C
=100°С
15
10
8
50
60
40
0.5
0.6
1
1
1.2
1.6
1.5
mA
TYP
MAX
UNIT
V
V
CEO(SUS)
I
C
=10mA , I
B
=0
V
CBO
=Rated Value,
V
BE(OFF)
=1.5V
I
CBO
V
CBO
=Rated Value,
V
BE(OFF)
=1.5V, T
C
=100°С
I
EBO
V
EB
=9V, I
C
=0
I
S/B
RBSOA
h
FE1
h
FE2
h
FE3
V
CE(SAT)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
BE (SAT)
V
V
V
V
V
V
V
MHz
pF
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
f
T
I
C
=500mA, V
CE
=10V, f=1MHz
Output Capacitance
C
OB
V
CB
=10V, I
E
=0, f=0.1MHz
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
t
D
Rise Time
t
R
V
CC
=125V, I
C
=2A, I
B1
=I
B2
=0.4A,
t
P
=25μs, Duty Cycle≤1%
Storage Time
t
S
Fall Time
t
F
Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Note:
2. Pulse Test: P
W
=300μs, Duty Cycle≤2%
4
65
0.025
0.3
1.7
0.4
0.1
0.7
4
0.9
μs
μs
μs
μs
CLASSIFICATION OF h
FE1
RANK
RANGE
A
15 ~ 20
B
20 ~ 25
C
25 ~ 30
D
30 ~ 40
E
40 ~ 50
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NPN SILICON TRANSISTOR
APPLICATION INFORMATION
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
Resistive
Switching
+5V
1N4933
0.001μF
33
MJE210
V
cc
L
MR826*
Vclamp
*SELECTED FOR≧1kV
V
CE
R
B
D1
-4.0V
+125V
R
c
TUT
SCOPE
Test Circuits
5V
P
w
DUTY CYCLE≦10%
t
r
, t
f
≦10ns
68
1k
33 1N4933
2N2222
1k
+5V
1N4933
0.02μF 270
1k
2N2905
47
1/2W
MJE200
100
-V
BE
(off)
R
B
I
B
T.U.T.
I
c
5.1k
51
Note:
P
W
and V
cc
Adjusted for Desired I
c
R
B
Adjusted for Desired I
B1
Circuit Values
Coil Data :
V
CC
=20V
FERROXCUBE core #6656
Full Bobbin ( ~ 16 Turns) #16
GAP for 200μH/20 A
L
COIL
=200μH
V
CLAMP
=300V
V
CC
=125V
R
C
=62Ω
D1=1n5820 or
Equiv.
RB=22Ω
OUTPUT WAVEFORMS
t
F
CLAMPED
Test Waveforms
I
C
I
C(PK)
t
1
t
f
t
F
UNCLAMPED
t
t
2
t
1
Adjusted to
Obtain Ic
t
1
=
L
COIL
(I
CPK
)
V
CC
L
COIL
(I
CPK
)
V
CLAMP
Test Equipment
Scope-Tektronics
475 or Equivalent
V
CE
V
CE
or
V
CLAMP
TIME
t
2
t
t
2
=
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RESISTIVE SWITCHING PERFORMANCE
NPN SILICON TRANSISTOR
Time, t (°С)
Transient Thermal Resistance, r(t)
(Normalized)
Fig. 6 Forward Bias Power Derating
1
0.8
0.6
0.4
THERMAL
DERATING
0.2
0
20
40
60
80
100
120
140
160
Case Temperature, T
C
(°С)
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Time, t (°С)
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